引起衍射线条宽化的不仅是微晶和第II类(微观)应力, 还有层错/孪生和位错。围绕着如何分离这种多(二、三乃至四)重宽化效应和如何求解微晶尺度、微观应变(力)、层错几率、层错密度和位错分布参数等, 发展了一系列线形分析方法。从线形卷积关系、微晶-微应变宽化线形分析、微晶-微应力-层错宽化线形分析和微晶-层错-位错宽化线形分析共4个部分介绍了线形分析技术的发展和应用, 以及笔者近十年进行的某些研究工作。

Lead to diffraction line broaden do not only have the crystallite and microcosmic stress but also have stacking faults/twins and dislocation. Round how separating many (two, three) fold broaden effects and how solving crystallite size, microstress, fault probability, dislocation density and dislocation distribution parameters, several methods of line profile analysis were developed. The advances and applications of line analysis techniques were introduced, and some works of authors in near ten years were introduced yet, from four parts including convolute relationships of line profiles and line broads, analysis techniques of crystallite-microstress two-fold effect, the least square method separating crystallite-microstress-fault and crystallite-fault-dislocation three-hold effects.