锡掺杂量对In2O3粉体光学性能和形貌的影响
Effects of Sn-doping Amounts on Optical Properties and Morphology of In2O3 Powders
摘 要
采用固相反应法在800℃烧结制备出了不同锡掺杂量的(In1-xSnx)2O3(x=0,0.01,0.02,0.05)粉体,通过X射线衍射仪(XRD)、拉曼光谱仪、傅里叶红外光谱仪(IR)、紫外吸收可见光谱(Uv-vis)分析仪以及扫描电镜(SEM)等对(In1-xSnx)2O3粉体的结构、光学性能和形貌进行了表征。结果表明:不同锡掺杂量的(In1-xSnx)2O3粉体都保持了In2O3的立方相晶胞结构;锡的掺杂改变了In2O3的紫外-可见吸收性能和红外吸收性能,抑制了In2O3粉体颗粒的长大,使其结构变得更加紧密。
锡掺杂
光学性能
形貌
indium oxide
Sn-doping
optical property
morphology
Abstract
(In1-xSnx)2O3(x=0,0.01,0.02,0.05)powders with different Sn-doping amounts were prepared by solid state reaction at 800 ℃. The structure,optical properties and morphology of (In1-xSnx)2O3 powders were characterized by X-ray diffraction(XRD),Raman spectroscopy,Fourier transform Tnfrared (IR) spectroscopy,ultraviolet visible (Uv-vis) absorption spectrophotoscopy and scanning electron microscopy(SEM) in detail. The results show that all the (In1-xSnx)2O3 powders with different Sn-doping amounts remained the cubic crystal structure of indium oxide,and its UV-vis and IR absorption properties were changed by the Sn-doping,the growth of In2O3 particles was restrained,and thus their structure became more closely.
中图分类号 TB331
所属栏目 新材料新工艺
基金项目 运城学院院级科研项目(CY-2013002);山西省自然科学基金资助项目(2013011009-3)
收稿日期 2013/11/27
修改稿日期 2014/8/22
网络出版日期
作者单位点击查看
备注吕宝华(1982-),男,山西文水人,讲师,硕士。
引用该论文: Lv Bao-hua,LI Yu-zhen,HUANG Jian,REN Xiao-juan. Effects of Sn-doping Amounts on Optical Properties and Morphology of In2O3 Powders[J]. Materials for mechancial engineering, 2015, 39(1): 49～51
吕宝华,李玉珍,黄健,任晓娟. 锡掺杂量对In2O3粉体光学性能和形貌的影响[J]. 机械工程材料, 2015, 39(1): 49～51
共有人对该论文发表了看法，其中：
人认为该论文很差
人认为该论文较差
人认为该论文一般
人认为该论文较好
人认为该论文很好
参考文献
【1】CALNANA S,TIWARIB A N. High mobility transparent conducting oxides for thin film solar cells［J］.Thin Solid Films,2010,518(7):1839-1849.
【2】谢小缔,陈传盛,宋淼,等.负载氧化铟纳米颗粒多壁碳纳米管的制备与表征［J］.机械工程材料,2013,37(1):81-84,92.
【3】GU Y,QIN L. Preparation of Sn-doped In2O3 nanopowders by a solvothermal process［J］.Rare Metals,2008,27(1):27-31.
【4】钟志有,张腾,顾锦华,等.磁控溅射沉积掺锡氧化铟透明导电薄膜的光电性能研究［J］.人工晶体学报,2013,42(4):647-652,670.
【5】CHANG W C,KUO C H,LEE P J ,et al. Synthesis of single crystal Sn-doped In2O3 nanowires:size-dependent conductive characteristics［J］.Physical Chemistry Chemical Physics,2012,14(37):13041-13045.
【6】SEETHA M,MANGALARAJ D. Sn doped In2O3 nanostructures on glass substrates:a new approach towards room temperature gas sensor［J］.Sensor Letters,2012,10(1/2):55-59.
【7】赵文雅,蒋洪川,陈寅之,等. 制备工艺对ITO薄膜的电阻率及沉积速率的影响［J］.电子元件与材料,2012,31(8):19-21.
【8】GU Y Y,QIN L P,WANG M J,et al. Solvothermal preparation and characteristics of Sn-doped In2O3［J］.J Cent South Univ Technol,2008,15(6):763-767.
【9】CHIQUITO J A,ESCOTE T M,ORLANDI O M,et al. Temperature dependence of electron properties of Sn doped In2O3 nanobelts［J］.Physica B:Condensed Matter,2007,400(1/2):243-247.
【10】葛超群,汪刘应,刘顾,等.超声化学共沉淀法合成纳米ITO粉体及其电磁特性研究［J］.兵器材料科学与工程,2013,36(1):51-54.
【11】ROJAS-LOPEZ M,NIETO-NAVARRO J,ROSENDO E,et al. Raman scattering study of photoluminescent spark-processed porous InP［J］.Thin Solid Films,2000,379(1/2):1-6.
【12】LI B B,YU D P,ZHANG S L. Raman spectral study of silicon nanowires［J］.Phys Rev B,1999,59:1645-1648.
【13】陈静.氧化铟纳米纤维的合成及物性研究［D］.长春:东北师范大学,2008:27-28.
【14】刘国栋.纳米花状In2O3级次纳米结构的制备、表征及光学性质［J］.济宁学院学报,2010,31(3):47-50.
【2】谢小缔,陈传盛,宋淼,等.负载氧化铟纳米颗粒多壁碳纳米管的制备与表征［J］.机械工程材料,2013,37(1):81-84,92.
【3】GU Y,QIN L. Preparation of Sn-doped In2O3 nanopowders by a solvothermal process［J］.Rare Metals,2008,27(1):27-31.
【4】钟志有,张腾,顾锦华,等.磁控溅射沉积掺锡氧化铟透明导电薄膜的光电性能研究［J］.人工晶体学报,2013,42(4):647-652,670.
【5】CHANG W C,KUO C H,LEE P J ,et al. Synthesis of single crystal Sn-doped In2O3 nanowires:size-dependent conductive characteristics［J］.Physical Chemistry Chemical Physics,2012,14(37):13041-13045.
【6】SEETHA M,MANGALARAJ D. Sn doped In2O3 nanostructures on glass substrates:a new approach towards room temperature gas sensor［J］.Sensor Letters,2012,10(1/2):55-59.
【7】赵文雅,蒋洪川,陈寅之,等. 制备工艺对ITO薄膜的电阻率及沉积速率的影响［J］.电子元件与材料,2012,31(8):19-21.
【8】GU Y Y,QIN L P,WANG M J,et al. Solvothermal preparation and characteristics of Sn-doped In2O3［J］.J Cent South Univ Technol,2008,15(6):763-767.
【9】CHIQUITO J A,ESCOTE T M,ORLANDI O M,et al. Temperature dependence of electron properties of Sn doped In2O3 nanobelts［J］.Physica B:Condensed Matter,2007,400(1/2):243-247.
【10】葛超群,汪刘应,刘顾,等.超声化学共沉淀法合成纳米ITO粉体及其电磁特性研究［J］.兵器材料科学与工程,2013,36(1):51-54.
【11】ROJAS-LOPEZ M,NIETO-NAVARRO J,ROSENDO E,et al. Raman scattering study of photoluminescent spark-processed porous InP［J］.Thin Solid Films,2000,379(1/2):1-6.
【12】LI B B,YU D P,ZHANG S L. Raman spectral study of silicon nanowires［J］.Phys Rev B,1999,59:1645-1648.
【13】陈静.氧化铟纳米纤维的合成及物性研究［D］.长春:东北师范大学,2008:27-28.
【14】刘国栋.纳米花状In2O3级次纳米结构的制备、表征及光学性质［J］.济宁学院学报,2010,31(3):47-50.
相关信息
