用磁控溅射法制备铜钨合金薄膜, 采用能谱仪、X射线衍射仪、透射和扫描电镜、电阻计和显微硬度仪等对合金薄膜的成分、结构和性能进行了表征, 探讨了钨原子分数的影响。结果表明: 含原子分数31.8%~54.8%钨的铜钨膜呈非晶态, 表面较平整; 含18%和60%钨的膜为晶态, 且出现固溶度扩展, 分别存在fcc Cu(W)亚稳过饱和固溶体和bcc W(Cu)固溶体, 铜钨膜电阻率高于纯铜膜的, 非晶铜钨膜电阻率较晶态膜高1.9倍以上; 铜钨膜硬度与钨含量呈正相关, 非晶及晶态铜钨膜硬度分别低于和略高于Voigt公式的计算值。

The composition, structure and properties of Cu-W thin films fabricated by magnetron sputtering were characterized by EDX, XRD, TEM, SEM, resistance meter and microhardness instrument. The effect of W atom fraction was discussed. The results show that Cu-W thin films with 31.8 at%-54.8 at% W were amorphous and had smooth surface. Thin films with 18 at% W and 60 at% W were crystalline state with solid solubility expansion in the fcc Cu(W) metastable supersaturated solid solution and bcc W(Cu) solid solution, respectively. The electrical resistivity of Cu-W thin films was higher than that of pure Cu films, and the resistivity of amorphous Cu-W thin films was over 1.9 times higher than that of crystalline films. The microhardness of Cu-W thin films was correlated positively with W content, the hardness of amorphous and crystalline Cu-W thin films was lower and slightly higher than the calculated values by Voigt fomula, respectively.