溅射气压和衬底温度对Si1-xGex薄膜结构和光吸收性能的影响
Effects of Sputtering Pressure and Substrate Temperature on Structure and Optical Absorption Properties of Si1-xGex Thin Films
摘 要
采用射频磁控溅射法沉积了Si1-xGex薄膜, 研究了溅射气压、衬底温度对薄膜结构、厚度、表面形貌、表面成分及光吸收性能的影响。结果表明: 薄膜均为微晶结构且相组成不随溅射气压和衬底温度的改变而改变; 随着溅射气压升高, 薄膜结晶性能降低, 升高衬底温度使其结晶性能提高; 随气压或温度的升高, 薄膜厚度均先增大后减小, 在1.0 Pa或400 ℃达到最大值; 随温度的升高, 薄膜表面团簇现象消失并变得平整致密, 气压为8.0 Pa时, 表面有孔洞和沟道; 随气压升高, 薄膜中锗含量降低, 光吸收强度减小, 光学带隙增大; 衬底温度的变化对光学带隙影响不大。
溅射气压
衬底温度
光吸收强度
Si1-xGex thin film
sputtering pressure
substrate temperature
optical absorption intensity
Abstract
Si1-xGex thin film was deposited by radio frequency magnetron sputtering method. The effects of sputtering pressure and substrate temperature on the structure, thickness, surface morphology, composition and optical absorption properties of the films were studied. The results show that phase composition of the film was microcrystalline structure, and it would not change with change of the sputtering pressure and substrate temperature. Crystal properties lowered with increase of the pressure, and improved with increase of the temperature. Thin film thickness first increases and then decreases with increase the pressure or temperature, and reached the maximum at 1.0 Pa or 400 ℃. Cluster disappeared and the thin film surface became smooth with increase of the temperature, but the surface had holes and channel when the pressure was 8.0 Pa. Ge content in thin film decreased with increase of pressure, and optical absorption intensities decreased, while the optical bandgap increased; the substrate temperature had little effect on the optical bandgap of film.
中图分类号 TB34
所属栏目 试验研究
基金项目 江苏省自然科学基金资助项目(SBK200922430); 国家大学生创新性实验计划资助项目(101028727)
收稿日期 2011/2/1
修改稿日期 2011/8/2
网络出版日期
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备注刘亚妮(1986-), 女, 山西运城人, 硕士研究生。
引用该论文: 刘亚妮,余乐,李子全,刘劲松,曹安,蒋维娜,刘建宁. Effects of Sputtering Pressure and Substrate Temperature on Structure and Optical Absorption Properties of Si1-xGex Thin Films[J]. Materials for mechancial engineering, 2012, 36(2): 32～36
刘亚妮,余乐,李子全,刘劲松,曹安,蒋维娜,刘建宁. 溅射气压和衬底温度对Si1-xGex薄膜结构和光吸收性能的影响[J]. 机械工程材料, 2012, 36(2): 32～36
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参考文献
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【6】HOSHO Y, SAWANO K, YAMADA A, et al.Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si+ implantation[J]. Thin Solid Films, 2010, 518(6):162-164.
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【13】郑伟涛.薄膜材料与薄膜技术[M]. 北京:化学工业出版社, 2007.
【14】WEBER J, ALOMSO M I.Near-band-gap photoluminescence of Si-Ge alloys[J]. Physical Review B, 1989, 40(8):5683-5693.
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