射频磁控溅射法制备MoS2/SiC双层薄膜
MoS2/SiC Double Films Prepared by Radio Frequency Magnetron Sputtering
摘 要
采用射频磁控溅射法在室温、500 ℃的单晶硅和GCr15钢基体上制备了MoS2/SiC双层薄膜, 并借助X射线衍射仪、扫描电子显微镜、摩擦磨损试验机以及划痕仪等研究了薄膜的结构、形貌、成分、摩擦学性能以及薄膜与基体的结合力。结果表明: 当衬底温度为500 ℃时制备的MoS2/SiC双层薄膜表面致密平整, 两层薄膜之间界面平直, 膜厚约为0.8 μm; 该双层膜的摩擦因数低, 耐磨性好; 添加中间层可提高薄膜与基体的结合力。
MoS2/SiC双层薄膜
摩擦因数
结合力
radio frequency magnetron sputtering
MoS2/SiC double film
friction coefficient
cohesion
Abstract
The MoS2/SiC double films were prepared on single crystal silicon and GCr15 steel substrate, which temperature was room temperature and 500 ℃, by radio frequency magnetron sputtering method. The structure, morphology, components, tribological properties of the films and cohesion between film and substrate were studied by X-ray diffraction, scanning electron microscopy, friction and wear tester and scratch tester, respectively. The results show that the surface of MoS2/SiC double film prepared at substrate temperature of 500 ℃ was compact and flat, and the interface of two layer films was straight. The film exhibited excellent wear resistance and low friction coefficient. Adding interlayers could improve the cohesion between substrate and MoS2/SiC film.
中图分类号 TH117.3
所属栏目 新材料 新工艺
基金项目 江苏高校省级重点实验室开放基金资助项目(kjsmcx 06005)
收稿日期 2011/1/15
修改稿日期 2011/10/21
网络出版日期
作者单位点击查看
备注王晓静(1985-), 女, 江苏苏州人, 硕士研究生。
引用该论文: WANG Xiao-jing,SHAO Hong-hong,WANG Ji. MoS2/SiC Double Films Prepared by Radio Frequency Magnetron Sputtering[J]. Materials for mechancial engineering, 2012, 36(2): 68～71
王晓静,邵红红,王季. 射频磁控溅射法制备MoS2/SiC双层薄膜[J]. 机械工程材料, 2012, 36(2): 68～71
被引情况:
【1】徐诚,沈理达,田宗军,刘志东,马云,朱军, "硅基底上喷射电沉积铜/钴多层膜的结合力",机械工程材料 39, 35-39(2015)
【2】王梦慧,易叶帆,鲍恩成,饶项炜,李晓涵,刘劲松,李子全, "铜层厚度及退火温度对ZnS/Cu/ZnS复合薄膜显微结构与性能的影响",机械工程材料 40, 47-51(2016)
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参考文献
【1】赵斌.金属弹簧片的二硫化钼喷涂[J].内燃机配件, 2005(1):21-23.
【2】陈玮, 张晔.MoS2基复合润滑薄膜的制备及其摩擦性能[J].机械工程材料, 2008, 32(8):47-49.
【3】DING X Z, ZENG X T, HE X Y, et al. Tribological properties of Cr-and Ti-doped MoS2 composite coatings under different humidity atmosphere[J].Surface and Coatings Technology, 2010, 205(1):224-231.
【4】CARDINAL M F, CASTRO P A, BAXI J, et al. Characterization and frictional behavior of nanostructured Ni-W-MoS2 composite coatings[J].Surface and Coatings Technology, 2009, 204(1):85-90.
【5】WONG K C, LU X, COTTER J, et al. Surface and friction characterization of MoS2 and WS2 third body thin films under simulated wheel/rail rolling-sliding contact[J].Wear, 2008, 264(7):526-534.
【6】宋文龙, 邓建新, 张辉.MoS2-Zr复合薄膜的摩擦磨损特性研究[J].润滑与密封, 2008, 33(2):35-39.
【7】李亚平, 安霞, 薛成山.碳化硅薄膜生长技术的研究进展[J].山东师范大学学报: 自然科学版, 2004, 19(2):37-40.
【8】NAKA M, FENG J C, SCHUSTER J C. Phase stabbility of SiC against Ti at high temperature[J].Vacuum, 2008, 83(1):223-225.
【9】张建军, 刘文安.SiC/Fe/SiC连接件高温温度场分布的计算[J].新技术新工艺, 2009(6):114-115.
【10】LIU Y S, CHENG L F, ZHANG L T, et al. Oxidation protection of multilayer CVD SiC/B/SiC coatings for 3D C/SiC composite[J].Material Science and Engineering, 2007, 466(1):172-177.
【11】冉丽萍, 易茂中, 蒋建献, 等.炭/炭复合材料MoS2/SiC高温抗氧化复合涂层的制备及结构[J].新型炭材料, 2006, 21(3):231-235.
【12】黄敏, 李克智, 李贺军, 等.包埋工艺参数对炭/炭复合材料表面SiC涂层致密性的影响 [J].机械工程材料, 2009, 33(3):5-11.
【13】郑伟涛.薄膜材料与薄膜技术[M].北京:化学工业出版社, 2004.
【14】王剑屏, 郝跃, 彭军.碳化硅异质外延薄膜生长及表面缺陷研究[J].西安电子科技大学学报, 2002, 13(4):1-7.
【15】邵红红, 陈威.射频磁控溅射法制备二硫化钼薄膜[J].润滑与密封, 2007, 32(12):43-46.
【2】陈玮, 张晔.MoS2基复合润滑薄膜的制备及其摩擦性能[J].机械工程材料, 2008, 32(8):47-49.
【3】DING X Z, ZENG X T, HE X Y, et al. Tribological properties of Cr-and Ti-doped MoS2 composite coatings under different humidity atmosphere[J].Surface and Coatings Technology, 2010, 205(1):224-231.
【4】CARDINAL M F, CASTRO P A, BAXI J, et al. Characterization and frictional behavior of nanostructured Ni-W-MoS2 composite coatings[J].Surface and Coatings Technology, 2009, 204(1):85-90.
【5】WONG K C, LU X, COTTER J, et al. Surface and friction characterization of MoS2 and WS2 third body thin films under simulated wheel/rail rolling-sliding contact[J].Wear, 2008, 264(7):526-534.
【6】宋文龙, 邓建新, 张辉.MoS2-Zr复合薄膜的摩擦磨损特性研究[J].润滑与密封, 2008, 33(2):35-39.
【7】李亚平, 安霞, 薛成山.碳化硅薄膜生长技术的研究进展[J].山东师范大学学报: 自然科学版, 2004, 19(2):37-40.
【8】NAKA M, FENG J C, SCHUSTER J C. Phase stabbility of SiC against Ti at high temperature[J].Vacuum, 2008, 83(1):223-225.
【9】张建军, 刘文安.SiC/Fe/SiC连接件高温温度场分布的计算[J].新技术新工艺, 2009(6):114-115.
【10】LIU Y S, CHENG L F, ZHANG L T, et al. Oxidation protection of multilayer CVD SiC/B/SiC coatings for 3D C/SiC composite[J].Material Science and Engineering, 2007, 466(1):172-177.
【11】冉丽萍, 易茂中, 蒋建献, 等.炭/炭复合材料MoS2/SiC高温抗氧化复合涂层的制备及结构[J].新型炭材料, 2006, 21(3):231-235.
【12】黄敏, 李克智, 李贺军, 等.包埋工艺参数对炭/炭复合材料表面SiC涂层致密性的影响 [J].机械工程材料, 2009, 33(3):5-11.
【13】郑伟涛.薄膜材料与薄膜技术[M].北京:化学工业出版社, 2004.
【14】王剑屏, 郝跃, 彭军.碳化硅异质外延薄膜生长及表面缺陷研究[J].西安电子科技大学学报, 2002, 13(4):1-7.
【15】邵红红, 陈威.射频磁控溅射法制备二硫化钼薄膜[J].润滑与密封, 2007, 32(12):43-46.
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