对冷拉拔铜锡合金导线显微组织的分子动力学模拟
Molecular Dynamics Simulation for Microstructure of Cold-Drawn Cu-Sn Alloy Conductor
摘 要
利用等温等体积的分子动力学(NTV-MD)及均方根位移和径向分布函数研究了铜锡合金中的锡在铜基体中的存在形式和分布, 并进行了试验验证。结果表明: 锡以固溶的形式分布于铜基体中, 有可能形成铜锡中间相Cu6Sn5, 但锡在铜基体中没有发生团聚现象; 试验结果验证了分子动力学模拟的准确性。
分子动力学
径向分布函数
均方根位移
显微组织
Cu-Sn alloy conductor
molecular dynamics
radial distribution function
mean square displacement
microstructure
Abstract
By means of constant temperature and constant volume molecular dynamics, square displacement and radial distribution function, the microstructure, existence form and distribution of Sn in Cu substrate were studied, and the experimental test was performed. The results show that Sn solid soluted in Cu substrate and probably formed to intermediate phase of Cu6Sn5, but the agglomerate phenomena for Sn in Cu substrate had no appeared. The accuracy of the model dynamics simulation were tested by the experimental results.
中图分类号 TG131
所属栏目 物理模拟与数值模拟
基金项目 国家自然科学联合基金资助项目(u0837601);国家自然科学基金资助项目(50874054);云南省创新团队资助项目(2009CI003);云南省自然科学基金资助项目(2008CD087)
收稿日期 2011/10/13
修改稿日期 2012/8/5
网络出版日期
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备注陈守东(1987-), 男, 安徽蚌埠人, 硕士研究生。
引用该论文: CHEN Shou-dong,CHEN Jing-chao,FENG Hao,YANG Yun-chuan. Molecular Dynamics Simulation for Microstructure of Cold-Drawn Cu-Sn Alloy Conductor[J]. Materials for mechancial engineering, 2012, 36(11): 88～91
陈守东,陈敬超,封皓,杨运川. 对冷拉拔铜锡合金导线显微组织的分子动力学模拟[J]. 机械工程材料, 2012, 36(11): 88～91
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【10】翟秋亚, 杨扬, 徐锦锋, 等.快速凝固Cu-Sn合金的组织形态及相结构[J].中国有色金属学报, 2006, 16(8):1374-1379.
【11】XU Jin-feng, WANG Nan, WEI Bing-bo. Microstructural characteristics and electrical resistivity of rapidly solidification Co-Sn alloys[J].Chinese Science Bulletin, 2004, 49(21):2242-2246.
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【15】MORSE P M. Diatomic molecules according to the wave mechanics-vibrational[J].Levels Phys Rev, 1929, 34:57-64.
【16】WADLEY H N G, ZHOU X W, JOHNSON R A, et al. Mechanisms model and methods of vapor deposition[J].Progress in Material Science, 2001, 46:329-377.
【17】ZHOU X W, WADLEY H N G, JOHNSON R A, et al. Atomic scale structure of sputtered metal multilayers[J].Acta Mater, 2001, 49:4005-4015.
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