氧化铋薄膜的制备及退火温度对其物相和表面形貌的影响
Preparation of Bismuth Oxide Films and Effects of Annealing Temperature on Phase and Surface Morphology
摘 要
采用传统陶瓷烧结工艺, 制备了直径为50 mm、厚度为3 mm的Bi2O3陶瓷靶, 利用该陶瓷靶和射频磁控溅射技术在Si(111)基体上制备了氧化铋薄膜, 研究了溅射压力为0.8 Pa时的氧分压对薄膜物相的影响, 并探讨了退火温度(350～550 ℃)对薄膜的物相和表面形貌的影响。结果表明: 随着氧分压从0增大到0.36 Pa, 薄膜由BiO相逐渐变成α-Bi2O3相; 随着退火温度的升高, 薄膜中出现了新的物相, 仍为多相结构, 不同相的衍射峰半高宽变化有增有减; 薄膜的晶粒尺寸随退火温度的升高而增大。
薄膜
磁控溅射
退火温度
bismuth oxide
film
magnetron sputtering
annealing temperature
Abstract
Bi2O3 ceramic targets with 50 mm in diameter and 3 mm in thickness were prepared by the traditional solid-state sintering process. Bismuth Oxide films were deposited on Si(111) substrate by R F. magnetron sputtering using Bi2O3 ceramic targets. The effect of partial pressure of oxygen on the phase composition when total sputtering pressure was 0.8 Pa, and the effect of annealing temperature (350-550 ℃) on the phase composition and surface morphology of bismuth oxide films were investigated. The results indicate that with the increase of oxygen partial pressure from 0 to 0.36 Pa, the phase composition changed from BiO structure to α-Bi2O3 structure gradually. New phases appeared in films with the annealing temperature rising, but it was still multiphase structure. The full-width of the diffraction peak at half-height of different phases displayed various change. The grain size of films tended to increase with annealing temperature going up.
中图分类号 TB43
所属栏目 试验研究
基金项目 江苏省六大人才高峰基金资助项目(2010-JXQC069); 江苏大学高级人才基金资助项目(10JDG061)
收稿日期 2012/2/22
修改稿日期 2012/10/1
网络出版日期
作者单位点击查看
备注陈瑞芳(1968-), 女, 湖南长沙人, 教授, 博士。
引用该论文: CHEN Rui-fang,XU Rui-li,LIU Hai-xia,HUA Yin-qun,CUI Xiao. Preparation of Bismuth Oxide Films and Effects of Annealing Temperature on Phase and Surface Morphology[J]. Materials for mechancial engineering, 2013, 37(2): 13～16
陈瑞芳,徐瑞丽,刘海霞,花银群,崔晓. 氧化铋薄膜的制备及退火温度对其物相和表面形貌的影响[J]. 机械工程材料, 2013, 37(2): 13～16
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参考文献
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【4】GUJAR T P, SHINDE V R, LOKHANDE C D, et al. The influence of oxidation temperature on structural, optical and electrical properties of thermally oxidized bismuth oxide films[J].Appl Surf Sci, 2008, 354: 4186-4190.
【5】储艳秋, 付正文, 应丽.脉冲激光沉积法制备氧化铋薄膜及其电化学性质研究[J].复旦学报: 自然科学版, 2003, 42(6): 956-960.
【6】HUGUENIN F, TORRESI R M, BUTTRY D A. Electrochemical of sol-gel deposited vanadium pentoxide film[J]. Thin Solid films, 2002, 149: 5469-551.
【7】花银群, 孙真真, 陈瑞芳.多组分掺杂ZnO陶瓷薄膜的射频磁控溅射法制备及表征[J].功能材料, 2011, 42(3): 444-447.
【8】WEST A R. Solid State Chemistry[M].New York: Wiley, 1984: 174.
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【10】李学丹, 万学英.真空沉积技术[M].杭州: 浙江大学出版社, 1994.
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