利用磁控溅射方法制备了一系列超薄Ta(5 nm)/Ni81Fe19(20 nm)/Ta(3 nm)磁性薄膜。着重研究了基片温度、缓冲层厚度对Ni81Fe19薄膜各相异性磁电阻(AMR)及磁性能的影响。利用X射线衍射仪分析了薄膜结构、晶粒取向; 用四探针技术测量了薄膜的电阻率和各向异性磁电阻; 用FD-SMOKE-A表面磁光克尔效应试验系统测量了薄膜的磁滞回线。结果表明: 在基片温度为400 ℃时制备的Ni81Fe19薄膜具有较大的各向异性磁电阻效应和较低的磁化饱和场, 薄膜最大各向异性磁电阻为3.5%, 最低磁化饱和场为739.67 A/m。基片温度为500 ℃制备的薄膜, 饱和磁化强度Ms值最大。随着缓冲层厚度x的增加, 坡莫合金薄膜的AMR值先变大后减小, 在x=5 nm时达到最大值。

A series of Ta(5 nm)/Ni81Fe19(20 nm)/Ta(3 nm) magnetic thin films were prepared by magnetron sputtering method. Effects of substrate temperature and buffer layer thickness on the structure and magnetic property of Ni81Fe19 thin films had been investigated. The film structure and grain orientation were analyzed by X-ray diffraction; Resistivity and AMR value of Ni81Fe19thin films were measured by four-point probe technology. Magnetic hysteresis loop was measured by FD-SMOKE-A. The results showed that, the Ni81Fe19 films prepared at the substrate temperatures of 400 ℃ showed a higher AMR value and a lower saturation magnetic field. The highest AMR value was 3.5% and the lowest magnetized saturated field was 739.67 A/m. The Ni81Fe19 films prepared at the substrate temperatures of 500 ℃ showed the highest saturation magnetization value. With the increase of the buffer layer thickness AMR value improved first but then decreased. It reached the maximum when the buffer layer thickness x was 5 nm.