无损检测在溅射靶材制造中的应用
The Application of Nondestructive Testing in Sputtering Target Manufacture
摘 要
作为关键原材料之一，电子信息产业对溅射靶材质量要求非常严格。无损检测对于确保溅射靶材质量具有重要意义。溅射靶材生产过程中应用的无损检测技术主要是X射线技术和超声波技术。无损检测工序的安排需要合理并兼顾生产效率。检测项目主要是原材料与靶材板坯内部缺陷检验和焊接质量检验。应用的超声检测技术主要是超声纵波脉冲反射C扫描技术，而且靶材制造的检验验收标准极为严格。
溅射靶材
无损检测
超声波检验
Electronic information
Sputtering target
Nondestructive testing
Ultrasonic testing
Abstract
The quality requirement for the sputtering target for electronic information industry and FPD industry is strictly high. The nondestructive testing added in the processes of sputtering target manufacturing is very useful to control the qualities of sputtering targets. Radiographic testing and ultrasonic testing were used for this purpose. The nondestructive testing could not reduce the production efficiency. The discontinuities in blanks, plates and weld joints were focus of attention. Ultrasonic longitudinal wave pulse reflection C-scan technology was mainly applied. The acceptance levels were extremely rigorous.
中图分类号 TG115.28
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收稿日期 2012/2/23
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备注刘红宾(1980-)，男，工程师，博士，主要从事新材料开发、制备与检验评估工作。
引用该论文: LIU Hong-Bin,LIU Wei,CHEN Ming,SHANG Zai-Yan,GAO Yan,HE Jin-Jiang,WANG Xin-Ping,LV Bao-Guo,JIANG Xuan. The Application of Nondestructive Testing in Sputtering Target Manufacture[J]. Nondestructive Testing, 2012, 34(7): 57～60
刘红宾,刘伟,陈明,尚再艳,高岩,何金江,王欣平,吕保国,江轩. 无损检测在溅射靶材制造中的应用[J]. 无损检测, 2012, 34(7): 57～60
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参考文献
【1】陈建军，杨庆山，贺丰收.溅射靶材的种类、应用、制备及发展趋势［J］.湖南有色金属,2006,22(04):38-76.
【2】金永中，刘东亮，陈 建.溅射靶材的制备及应用研究［J］.四川理工学院学报(自然科学版),2005,18(3):22-24.
【3】努力古.溅射靶材的制备及发展趋势［J］.新疆有色金属,2008(5):55-56.
【4】尚再艳，江轩，李勇军，等.集成电路制造用溅射靶材［J］.稀有金属,2005,29(4)：475-477.
【5】刘志坚，陈远星，黄伟嘉，等.溅射靶材的应用及制备初探［J］.南方金属,2003,135:23-32.
【6】Wickersham C E, Poole Jr J E, Leybovich A, et al. Measurements of the critical inclusion size for arcing and macroparticle ejection from aluminum sputtering targets［J］. J Vac Sci Technol A,2001,19(6):2767-2772.
【7】Wickersham C E, Poole Jr J E, Fan J S. Arc generation from sputtering plasma-dielectric inclusion interactions［J］. J Vac Sci Technol A,2002,20(3):833-838.
【8】Wickersham C E, Poole Jr J E, Fan J S, et al. Video analysis of inclusion induced macroparticle emission from aluminum sputtering targets［J］. J Vac Sci Technol A,2001,19(6):2741-2750.
【9】Gary S Selwyn, Corey A Weiss, Federico Sequeda, et al. Particle contamination formation in magnetron sputtering processes［J］. J Vac Sci Technol A,1997,15(4):2023-2028.
【10】Vikram Pavate, Murali Abburi, Sunny Chiang, et al. Correlation between aluminum alloy sputtering target metallurgical characteristics［J］. Arc initiation and In-film Defect Density,1997(3214):42-47.
【11】Paul S Gilman, Alfred Snowman, Andre Desert. Determination of actual defect size in cathode sputter targets subjected to ultrasonic inspection: US, 6269699 B1［P］. 2001.
【12】Charles E Wickersham, John E Poole, Alexander Leybovich, et al. Method for determing a critical size of an inclusion in aluminum or aluminum alloy sputtering target: US, 7087142 B2［P］. 2006.
【13】Charles E Wlckersham JR, John E Poole, Alexander Leybovich, et al. Method for determing a critical size of an inclusion in aluminum or aluminum alloy sputtering target: US, 2004/0118675 A1［P］.2004.
【14】Russell B Gore, Ronald H Fleming. Methods of testing sputtering target materials: US, 6439054 B1［P］.2002.
【15】Charles E Wlckersham JR, John E Poole, Alexander Leybovich, et al. Sputter targets and methods of manufacturing same to reduce particulate emission during sputtering: US, 2002/0184970 A1［P］.2002.
【16】Hidemasa Tamura, Norio Yokoyama, Eiichi Shimizu, et al. Sputtering target and production method thereof: US, 6024852［P］.2000.
【17】陈岳军，赵海燕，史耀武.粗晶材料超声检测缺陷信号增强的小波分析法［J］.中国有色金属学报,1997,7(2):94-96.
【2】金永中，刘东亮，陈 建.溅射靶材的制备及应用研究［J］.四川理工学院学报(自然科学版),2005,18(3):22-24.
【3】努力古.溅射靶材的制备及发展趋势［J］.新疆有色金属,2008(5):55-56.
【4】尚再艳，江轩，李勇军，等.集成电路制造用溅射靶材［J］.稀有金属,2005,29(4)：475-477.
【5】刘志坚，陈远星，黄伟嘉，等.溅射靶材的应用及制备初探［J］.南方金属,2003,135:23-32.
【6】Wickersham C E, Poole Jr J E, Leybovich A, et al. Measurements of the critical inclusion size for arcing and macroparticle ejection from aluminum sputtering targets［J］. J Vac Sci Technol A,2001,19(6):2767-2772.
【7】Wickersham C E, Poole Jr J E, Fan J S. Arc generation from sputtering plasma-dielectric inclusion interactions［J］. J Vac Sci Technol A,2002,20(3):833-838.
【8】Wickersham C E, Poole Jr J E, Fan J S, et al. Video analysis of inclusion induced macroparticle emission from aluminum sputtering targets［J］. J Vac Sci Technol A,2001,19(6):2741-2750.
【9】Gary S Selwyn, Corey A Weiss, Federico Sequeda, et al. Particle contamination formation in magnetron sputtering processes［J］. J Vac Sci Technol A,1997,15(4):2023-2028.
【10】Vikram Pavate, Murali Abburi, Sunny Chiang, et al. Correlation between aluminum alloy sputtering target metallurgical characteristics［J］. Arc initiation and In-film Defect Density,1997(3214):42-47.
【11】Paul S Gilman, Alfred Snowman, Andre Desert. Determination of actual defect size in cathode sputter targets subjected to ultrasonic inspection: US, 6269699 B1［P］. 2001.
【12】Charles E Wickersham, John E Poole, Alexander Leybovich, et al. Method for determing a critical size of an inclusion in aluminum or aluminum alloy sputtering target: US, 7087142 B2［P］. 2006.
【13】Charles E Wlckersham JR, John E Poole, Alexander Leybovich, et al. Method for determing a critical size of an inclusion in aluminum or aluminum alloy sputtering target: US, 2004/0118675 A1［P］.2004.
【14】Russell B Gore, Ronald H Fleming. Methods of testing sputtering target materials: US, 6439054 B1［P］.2002.
【15】Charles E Wlckersham JR, John E Poole, Alexander Leybovich, et al. Sputter targets and methods of manufacturing same to reduce particulate emission during sputtering: US, 2002/0184970 A1［P］.2002.
【16】Hidemasa Tamura, Norio Yokoyama, Eiichi Shimizu, et al. Sputtering target and production method thereof: US, 6024852［P］.2000.
【17】陈岳军，赵海燕，史耀武.粗晶材料超声检测缺陷信号增强的小波分析法［J］.中国有色金属学报,1997,7(2):94-96.
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