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铜箔形貌对石墨烯生长质量影响的表面氧化法评判
          
Surface Oxidation Method Judging of the Effect of Cu Foil Morphology on Graphene Growth Quality

摘    要
采用简化的电化学抛光工艺得到了具有平整表面的铜箔,然后分别以电化学抛光前后的铜箔为基底,通过化学气相沉积法制备了石墨烯,利用原子力显微镜、光学显微镜、扫描电镜、电子能谱仪、拉曼光谱和I-V特性电学测试仪等研究了铜箔表面形貌与石墨烯质量的关联,并通过表面氧化法来判断石墨烯是否在基底上生长完全.结果表明:在抛光铜箔上生长的石墨烯缺陷较少、形貌完整,并且导电性能明显提高;表面氧化法可以快速准确判断石墨烯的生长质量.
标    签 化学气相沉积法   石墨烯   铜箔   表面氧化法   chemical vapor deposition method   graphene   copper foil   surface oxidation method  
 
Abstract
Copper foils with smooth surface were prepared by simplified electrochemical polishing process,and then the copper foils before and after electrochemical polishing were taken as the substrate to prepare graphenes by chemical vapor deposition (CVD) method.The relationship between copper foil surface morphology and graphene quality was studied via atomic force microscopy (AFM),optical microscopy(OM),scanning electron microscopy (SEM),energy dispersive spectrometer (EDS),Raman spectrum and I-V measurements.Surface oxidation method was used to judge the growth quality of the graphene.The results show that the graphene grown on the copper foil after polishing had a small number of defects,integrated morphology and obviously improved conductivity.Surface oxidation method could rapidly and accurately judge the growth quality of the graphene.

中图分类号 O613.7   DOI 10.11973/jxgccl201507005

 
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所属栏目 试验研究

基金项目 国家自然科学基金资助项目(51002076,51375240);机械结构力学及控制国家重点实验室(南京航空航天大学)自主研究课题项目(0413Y02);中央高校基本科研业务费专项资金资助项目(NJ20140003)

收稿日期 2014/1/24

修改稿日期 2014/12/26

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备注梁勇明(1986-),男,广西桂林人,硕士研究生.

引用该论文: LIANG Yong-ming,ZHOU Jian-xin,ZHANG Yun-qiu. Surface Oxidation Method Judging of the Effect of Cu Foil Morphology on Graphene Growth Quality[J]. Materials for mechancial engineering, 2015, 39(7): 25~30
梁勇明,周建新,张芸秋. 铜箔形貌对石墨烯生长质量影响的表面氧化法评判[J]. 机械工程材料, 2015, 39(7): 25~30


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