衬底温度对低温制备铜铟镓硒薄膜结晶性能的影响
Effect of Substrate Temperature on Crystalline Property of Cu(In,Ga)Se2 Thin Film Grown at Low Temperature
摘 要
采用低温三步共蒸发法在柔性聚酰亚胺衬底上制备了铜铟镓硒(CIGSe)薄膜, 利用扫描电子显微镜和X射线衍射仪表征了CIGSe薄膜的结晶质量和晶体结构, 探讨了低温沉积工艺中第二步和第三步衬底温度与薄膜晶粒尺寸、织构取向和结晶性能的关系。结果表明: 随着第二步和第三步衬底温度同时升高, CIGSe薄膜的晶粒尺寸逐渐增大, 镓的两相分离现象逐渐消失; 保持第二步衬底温度不变, 随着第三步衬底温度进一步升高, CIGSe薄膜的晶粒尺寸继续增大, 薄膜的结晶质量显著改善; 第二步和第三步衬底温度的变化对CIGSe薄膜的织构取向基本没有影响。
衬底温度
低温生长
结晶质量
Cu(In,Ga)Se2 thin film
substrate temperature
low-temperature growth
crystalline quality
Abstract
Cu(In,Ga)Se2 (CIGSe) thin films were deposited on polyimide substrate using the low-temperature three-stage co-evaporation process. The crystalline quality and crystal structure of the CIGSe thin films were investigated by scanning electron microscopy and X-ray diffraction. The effects of substrate temperatures of the second/third stages on grain size, texture orientation and ctystalline property were analyzed. The resutls show that, with the increase of the substrate temperatures of the second/third stages simultaneously, the grain size increased and the Ga phase separation disappeared gradually. Keeping the substrate temperature of the second stage unchanged, with the increase of the substrate temperature of the third stage, the grain size of CIGSe thin film continued to increase and the crystalline quality of the film was improved obviously. The change of the substrate temperatures of the second/third stages had unobvious effect on the texture orientation of the CIGSe thin film.
中图分类号 TM914.4 DOI 10.11973/jxgccl201508014
所属栏目 材料性能及其应用
基金项目
收稿日期 2014/1/22
修改稿日期 2014/12/20
网络出版日期
作者单位点击查看
备注曹章轶(1981-), 男, 上海人, 工程师, 硕士。
引用该论文: CAO Zhang-yi,WU Min,ZHANG Dong-dong. Effect of Substrate Temperature on Crystalline Property of Cu(In,Ga)Se2 Thin Film Grown at Low Temperature[J]. Materials for mechancial engineering, 2015, 39(8): 65～69
曹章轶,吴敏,张冬冬. 衬底温度对低温制备铜铟镓硒薄膜结晶性能的影响[J]. 机械工程材料, 2015, 39(8): 65～69
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参考文献
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【2】GREEN M A, EMERY K, HISHIKAWA Y, et al. Solar cell efficiency tables［J］.Progress in Photovoltaics: Research and Applications,2014,22(1): 1-9.
【3】KESSLER F, HERRMANN D, POWALLA M. Approaches to flexible CIGS thin-film solar cells［J］.Thin Solid Films,2005,480/481: 491-498.
【4】CABALLERO R, KAUFMANN C A, EISENBARTH T, et al. High efficiency low temperature grown Cu(In,Ga)Se2 thin film solar cells on flexible substrates using NaF precursor layers［J］.Progress in Photovoltaics: Research and Applications,2011,19(5): 547-551.
【5】ZHANG L, HE Q, JIANG W L, et al. Effects of substrate temperature on the structural and electrical properties of Cu(In,Ga)Se2 thin films［J］.Solar Energy Materials and Solar Cells,2009,93(1): 114-118.
【6】ISHIZUKA S, YAMADA A, ISLAM M M, et al. Na-induced variations in the structural, optical, and electrical properties of Cu(In,Ga)Se2 thin films［J］.Journal of Applied Physics,2009,106(3): 034908-1-034908-6.
【7】YUN J H, KIM K H, KIM M S, et al. Fabrication of CIGS solar cells with a Na-doped Mo layer on a Na-free substrate［J］.Thin Solid Films,2007,515(15): 5876-5879.
【8】BODEGARD M, GRANATH K, STOLT L. Growth of Cu(In,Ga)Se2 thin films by coevaporation using alkaline precursors［J］.Thin Solid Films,2000,361/362: 9-16.
【9】CHIRILA A, BUECHELER S, PIANEZZI F, et al. Highly efficient Cu(In,Ga)Se2 solar cells grown on flexible polymer films［J］.Nature Materials,2011,10(11): 857-861.
【10】RUDMANN D, BREMAUD D, ZOGG H, et al. Na incorporation into Cu(In,Ga)Se2 for high-efficiency flexible solar cells on polymer foils［J］.Journal of Applied Physics,2005,97(8): 084903-1-084903-5.
【11】CONTRERAS M A, EGAAS B, KING D, et al. Texture manipulation of CuInSe2 thin films［J］.Thin Solid Films,2000,361/362: 167-171.
【12】BARREAU N, PAINCHAUD T, COUZINIE-DEVY F, et al. Recrystallization of CIGSe layers grown by three-step processes: a model based on grain boundary migration［J］.Acta Materialia,2010,58(17): 5572-5577.
【13】SCOFIELD J H, DUDA A, ALBIN D, et al. Sputtered molybdenum bilayer back contact for copper indium diselenide-based polycrystalline thin-film solar cells［J］.Thin Solid Films,1995,260(1): 26-31.
【14】GABOR A M, TUTTLE J R, ALBIN D S, et al. High-efficiency CuInxGa1-xSe2 solar cells made from (Inx,Ga1-x)2Se3 precursor films［J］.Applied Physics Letters,1994,65(2): 198-200.
【15】KLENK R, WALTER T, SCHOCK H W, et al. A model for the successful growth of polycrystalline films of CuInSe2 by multisource physical vacuum evaporation［J］.Advanced Materials,1993,5(2): 114-119.
【16】BODEGARD M, LUNDBERG O, LU J, et al. Re-crystallisation and interdiffusion in CGS/CIS bilayers［J］.Thin Solid Films,2003,431/432: 46-52.
【17】SHAFARMAN W N, KLENK R, MCCANDLESS B E. Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gap［J］.Journal of Applied Physics,1996,79(9): 7324-7328.
【18】CONTRERAS M A, TUTTLE J, GABOR A, et al. High efficiency graded bandgap thin-film polycrystalline Cu(In,Ga)Se2-based solar cells［J］.Solar Energy Materials and Solar Cells,1996,41/42: 231-246.
【19】CHIRILA A, BLOESCH P, SEYRLING S, et al. Cu(In,Ga)Se2 solar cell grown on flexible polymer substrate with efficiency exceeding 17%［J］.Progress in Photovoltaics: Research and Applications,2011,19(5): 560-564.
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