Magnetic Leakage Field Yielded by A Surface Breaking Discontinuity with Any Shape Transversal Section
摘 要
由磁荷分水岭概念分析了任意形状横截面表面开口缺陷所产生的漏磁场H,推得H∝(d-2kδ-2E),其中d是缺陷的最大深度,k是比例系数,δ是缺陷横截面上磁荷分水岭沿缺陷深度方向的微小偏移,而E是取决于磁荷分水岭的常数。从而可得出下列结论,① 只有d和E很小时,或dW(W为缺陷长度)时,才近似有H∝d的关系。② 当dW时,可粗略估计H与d无关,而只取决于W。③ 无法从缺陷漏磁场的量值和分布反演出表面开口缺陷横截面的形状。
Abstract
The magnetic leakage field H yielded by a surface breaking discontinuity with any shape transversal section is analyzed from the concept of the watershed of magnetic charges. It is deduced that H∝(d-2kδ-2E), in which d is the maximum depth of the defect, k is a coefficient, δ is a small deflexion of the watershed of magnetic charges on the transversal section along the direction of the flaw depth, E is a constant depending on the watershed of magnetic charges. Thereby the following conclusions may be reached. ① Only when d, E are very small or when dW (the length of the discontinuity), there will be the relation, that H∝d. ② When dW, in a rough estimation H is independent of d, and only depending on W. ③ The figure of the transversal section of a surface breaking discontinuity can not be calculated out conversely from the magnitude and the distribution of its magnetic leakage field.
中图分类号 TG115.28
所属栏目 科研成果与学术交流
基金项目 国家自然科学基金资助项目(50371045)
收稿日期 2005/4/27
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备注仲维畅(1937-),男,高级工程师,从事无损检测工作。
引用该论文: ZHONG Wei-chang. Magnetic Leakage Field Yielded by A Surface Breaking Discontinuity with Any Shape Transversal Section[J]. Nondestructive Testing, 2006, 28(12): 633~634
仲维畅. 横截面为任意形状的表面开口缺陷的漏磁场[J]. 无损检测, 2006, 28(12): 633~634
被引情况:
【1】时朋朋, "缺陷漏磁场磁偶极子模型的若干解析解",无损检测 37, 1-7(2015)
【2】仲维畅, "磁偶极子理论在无损检测中的用途",无损检测 32, 49-52(2010)
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参考文献
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【3】仲维畅.方钢纵向磁化时各棱上的磁荷线密度[J].无损检测,2002,24(8):332-335.
【4】仲维畅.方钢纵向磁化时端面上的磁力分水岭和磁荷分水岭——磁粉探伤原理之二十八[A].第八届全国无损检测大会暨国际无损检测技术研讨会论文集[C/CD\].苏州:2003.
【5】仲维畅.有限长磁偶极线和磁粉探伤[J].无损检测,1991,13(4):96-100.
【6】Wei-Chang Zhong. Linear magnetic dipole of finite length and magnetic particle testing[J]. Materials Evaluation,2001,59(8):961-966.
【7】仲维畅.方钢表面矩形贯通沟槽的深度与该沟槽引起的漏磁场——磁粉探伤原理之三十三[A].第九届全国表面(MT&PT)探伤技术年会论文集[C].西安:2005.121-126.
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