硅/碳化硅在高温热处理过程中的组织变化
Transformation of Microstructure and Phase in Si/SiC Materials during High Temperature Heat Treatment
摘 要
分别于真空和氮气气氛中,在1 650,1 750和1 850 ℃对硅/碳化硅进行高温处理,通过光学显微镜、扫描电镜和X射线衍射仪研究了硅/碳化硅的组织变化.结果表明:氮气氛下,α子晶在界面能驱动下,通过基面以层状形式不断聚合长大,最终以完全“吞食”所包裹的β-SiC来完成相转变；在真空条件下,除了前一种方式外,还有一定的蒸发-凝聚烧结机制存在,两者同时作用使得比氮气条件下有较快的β-SiC转化速度.转化驱动力随温度的上升而提高.1 850 ℃氮气环境下处理的材料仍有少量β相存在,而真空1 750 ℃处理后就能得到单一α相的多孔材料.
热处理
显微组织
Si/SiC
heat treatment
microstructure
Abstract
Si/SiC materials were treated respectively in vacuum and nitrogen atmosphere at 1 650,1 750 and 1 850 ℃.The transformation of microstructure in Si/SiC was investigated by means of optical microscopy,scanning electrion microscopy and X-ray diffraction.In nitrogen atmosphere the transformation mode was nucleation of α-SiC seed lamellae of base plane by interface energy drawn.In vacuum,two transformation modes of base plane nucleation and evaporation-coacervation were concurrently present,and β-SiC was transformed more quickly than in nitrogen atmosphere.The driven force of transformation increased with temperature.There was a little β-SiC phase present at 1 850 ℃ treated in nitrogen atmosphere,but single α-SiC phase porous material was obtained by treated at 1 750 ℃ in vacuum.
中图分类号 TB332.2 TG151.1
所属栏目
基金项目 国家“863”科技攻关资助项目(2001AA333010)
收稿日期 2005/7/29
修改稿日期 2005/10/20
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备注李世斌(1965-),男,陕西西乡人,副教授,博士.
引用该论文: LI Shi-bin,MA Ming-liang,JIN Zhi-hao. Transformation of Microstructure and Phase in Si/SiC Materials during High Temperature Heat Treatment[J]. Materials for mechancial engineering, 2006, 30(9): 17～20
李世斌,马明亮,金志浩. 硅/碳化硅在高温热处理过程中的组织变化[J]. 机械工程材料, 2006, 30(9): 17～20
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参考文献
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【3】Shinoaki Samuel S,Noakes John E.Recrystallization and phase transformation in reaction-sintered SiC[J].J Am Ceram Soc,1978,61(5-6):237-242.
【4】杨于兴,漆王睿.X射线衍射分析[M].上海:上海交通大学出版社,1994.
【5】Ortiz A L,Sanchez-Bajo F,Cumbrera F L,et al.X-ray powder diffraction analysis of a silicon carbide-based ceramic[J].Material Letter,2001,49:137-145.
【6】Zhou Hong,Singh Raj N.Kinetics model for the growth of silicon carbide by the reaction of silicon with carbon[J].J Am Ceram Soc,1995,78(9):2456-2462.
【7】Li Jian-guo,Hausner Hans.Reaction wetting in the liquid-silicon/solid-carbon system[J].J Am Ceram Soc,1996,79(4):873-880.
【8】Ness J N,Page T F.Microstructural evolution in reaction-bonded silicon carbide[J].J Mater Sci,1986,21:1377-1397.
【9】Lim Chang-Bin,Iseki Takayoshi.Formation and transportation of intergranular and nodular fine-grained β-SiC in reaction-sintered SiC[J].Adv Ceram Mater,1988,3(6):590-594.
【10】Ogbuji L U,Mitchell T E,Heuer A H.The β→α transformation in polycrystalline SiC:Ⅲ,The thickening of α plates[J].J Am Ceram Soc,1981,64(2):91-99.
【11】Heuer A H,Fryburg G A,Ogbuji L U,et al.β→α transformation in polycrystalline SiC:Ⅰ,Microstructural aspects[J].J Am Ceram Soc,1978,61(9-10):406-412.
【12】Lim C B,Iseki T.Strength-porosity-microstructure relationship in porous reaction-sintered SiC with free silicon removed[J].J Mater Sci,1990,31(8):4203-4210.
【13】饶东升.硅酸盐物理化学[M].北京:冶金工业出版社,1991.
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