Effect of Underlay Materials and Sputtering Method on Adhesive Force of CNx Films
摘 要
分别将W18Cr4V高速钢和YG8硬质合金作为衬底材料,用直流磁控溅射和射频磁控溅射法制备了CNx薄膜,用划痕法测定了薄膜和衬底材料之间的膜基结合力.结果表明:YG8硬质合金作为衬底材料时薄膜的膜基结合力较高;对YG8硬质合金衬底材料进行适当的腐蚀处理或溅射一层TiN中间层,薄膜的膜基结合力明显提高;对于两种衬底材料,射频磁控溅射法制备的薄膜膜基结合力明显高于直流磁控溅射法制备的薄膜.
Abstract
CNx films were prepared by DC and RF magnetron sputtering with W18Cr4V high-speed steel and YG8 hard alloy underlay.The adhesive force of CNx films was studied by scratch test.The research indicate that the adhesive force of CNx films is high when YG8 hard alloy was applied as underlay.The adhesive force of CNx films can be enhanced when YG8 underlay is corroded or TiN middle transition layer is added.RF magnetron sputtering is in favor of the adhesive force of CNx films for both W18Cr4V and YG8 underlay.
中图分类号 O484.4
所属栏目
基金项目
收稿日期 2005/11/21
修改稿日期 2006/4/18
网络出版日期
作者单位点击查看
备注刘军(1965-),男,江苏镇江人,教授,硕士.
引用该论文: LIU Jun,CHEN Zhi-gang,CHEN Chun,BI Kai. Effect of Underlay Materials and Sputtering Method on Adhesive Force of CNx Films[J]. Materials for mechancial engineering, 2006, 30(12): 7~10
刘军,陈志刚,陈春,毕凯. 衬底材料和溅射方法对CNx薄膜膜基结合力的影响[J]. 机械工程材料, 2006, 30(12): 7~10
被引情况:
【1】陈向阳,张瑾,胡海霞,周哲波, "反应磁控溅射方法制备CNx薄膜的高温抗氧化性能",机械工程材料 38, 71-75(2014)
共有人对该论文发表了看法,其中:
人认为该论文很差
人认为该论文较差
人认为该论文一般
人认为该论文较好
人认为该论文很好
参考文献
【1】Liu A Y,Cohen M L.Prediction of new low compressibility solids[J].Science,1989,245:841-842.
【2】Liu A Y,Cohen M L.Structural properties and electronic structure of low compressibility material β-Si3N4 and β-C3N4[J].Phys Rev B,1990,41(15):10727-10374.
【3】Nesladek M,Vandiererdonck K,Quaeyhagens C,et al.Adhesion of diamond coatings on cemented carbide[J].Thin Solid Films,1995,270:184-188.
【4】张恒大,陈利民,刘志玲,等.硬质合金金刚石薄膜工具基体前处理有效方法探讨[J].金刚石与磨料磨具工程,2002,(5):8-11.
【5】Monclus M A,Cameron D C,Chowdhurry A K M S.Electrical properties of reactively sputtered CNx films[J].Thin Solid Films,1999,341:94-100.
【6】李俊杰,王欣,卞海蛟,等.磁控溅射CNx薄膜的附着力、粗糙度与衬底偏压的关系[J].发光学报,2003,24(3):305-308.
【7】吴大维,付德君,毛先唯,等.C3N4/TiN交替复合膜的微结构研究[J].物理学报,1999,48(5):904-912.
【2】Liu A Y,Cohen M L.Structural properties and electronic structure of low compressibility material β-Si3N4 and β-C3N4[J].Phys Rev B,1990,41(15):10727-10374.
【3】Nesladek M,Vandiererdonck K,Quaeyhagens C,et al.Adhesion of diamond coatings on cemented carbide[J].Thin Solid Films,1995,270:184-188.
【4】张恒大,陈利民,刘志玲,等.硬质合金金刚石薄膜工具基体前处理有效方法探讨[J].金刚石与磨料磨具工程,2002,(5):8-11.
【5】Monclus M A,Cameron D C,Chowdhurry A K M S.Electrical properties of reactively sputtered CNx films[J].Thin Solid Films,1999,341:94-100.
【6】李俊杰,王欣,卞海蛟,等.磁控溅射CNx薄膜的附着力、粗糙度与衬底偏压的关系[J].发光学报,2003,24(3):305-308.
【7】吴大维,付德君,毛先唯,等.C3N4/TiN交替复合膜的微结构研究[J].物理学报,1999,48(5):904-912.
相关信息