Na+掺杂ZnO薄膜的结构和电学性能
Structural and Electrical Properties of Na+-doped ZnO Thin Films
摘 要
以醋酸锌为溶质、碳酸钠为钠源,采用溶胶-凝胶法在Si〈100〉衬底上制备了钠掺杂ZnO薄膜,掺杂浓度分别为0,0.018,0.036,0.045,0.063和0.09 mol/L.研究了钠掺杂后ZnO晶胞尺寸和表面形貌的变化规律,用霍尔效应仪测试了试样的载流子浓度及导电类型,分析了材料的拉曼光谱与试样内部缺陷浓度的关系.结果表明:Na+离子可进入ZnO晶格取代Zn2+,导致晶胞变大,同时ZnO薄膜由n-型转变为p-型导电;当Na+掺杂浓度达0.045 mol/L时,其电阻率为75.7 Ω·cm,空穴浓度2.955×1017/cm3.
Na+掺杂
p-型导电
溶胶-凝胶法
ZnO thin film
Na+ dopant
p-type
sol-gel method
Abstract
Na+-doped ZnO thin films were prepared on Si〈100〉 substrate by sol-gel method using zinc acetate and sodium carbonate as starting materials,the doping amount is 0,0.018,0.036,0.045,0.063 and 0.090 mol/L,respectively.The phase structural characteristics and electrical properties,including the cell size of ZnO lattice,the conducting type as well as the Raman shift,of the so-obtained films were investigated by XRD,SEM,Raman scattering analysis and four-point probe van der Pauw method.The results showed that Na+ can occupy the Zn2+ sites of ZnO lattice,leading to the enlargement of ZnO cell.After doping Na+,the conductive type of ZnO films changed to p from n-type,and the resistivity,Hall mobility,and the hole concentration of the film with 0.045 mol/L Na+ were 75.7 Ω·cm and 2.955×1017/cm3,respectively.
中图分类号 O472
所属栏目
基金项目
收稿日期 2006/10/11
修改稿日期 2006/12/29
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备注李英伟(1982-),男,重庆人,硕士.
引用该论文: LI Ying-wei,LIN Chun-fang,ZHOU Xiao,ZHU Xing-wen. Structural and Electrical Properties of Na+-doped ZnO Thin Films[J]. Materials for mechancial engineering, 2007, 31(8): 15～18
李英伟,林春芳,周晓,朱兴文. Na+掺杂ZnO薄膜的结构和电学性能[J]. 机械工程材料, 2007, 31(8): 15～18
被引情况:
【1】王志雄,王欣,李霞霞,黄飞武,张霞, "采用固相晶化和准分子激光晶化制备结晶硅薄膜的对比",机械工程材料 38, 46-49(2014)
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【14】程光煦,喇 曼.布里渊散射——原理及应用[M].北京:科学出版社,2001:386.
【15】Huang Yanqiu,Liu Meidong,Li Zhen,et al.Raman spectroscopy study of ZnO-based ceramic films fabricated by sol-gel process[J].Materials Science and Engineering B,2003,97:111-116.
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