磁控溅射法制备ZrW2O8薄膜及其性能
Properties of ZrW2O8 Thin Films Prepared by Radio Frequency Magnetron Sputtering
摘 要
利用射频磁控溅射法在单晶硅片和石英基片上沉积了非晶态ZrW2O8薄膜,对不同温度下热处理的薄膜进行了XRD分析;用扫描电镜观察了薄膜的表面形貌,用阻抗分析仪和分光光度计分别研究了薄膜的介电性能和透光性能.结果表明:非晶态薄膜在740 ℃热处理3 min可以制得具有较好负热膨胀特性的ZrW2O8薄膜,其热膨胀系数为-2.54×10-5/℃;介电常数和介电损耗均随着频率的增加而减小;在可见光范围内薄膜的透光率达75%.
ZrW2O8薄膜
热膨胀系数
介电性能
透光率
magnetron sputtering
ZrW2O8 thin film
thermal expansion coefficient
dielectric property
Abstract
Amorphous ZrW2O8 thin films were deposited on quartz and single crystal silicon substrates by using radio frequency magnetron sputtering.The as-deposited films were characterized using XRD after heat treatment at different temperatures and the surface morphology of thin films were characterized by scanning electron microscopy (SEM).The dielectric property and light transmittance of ZrW2O8 thin films were investigated using impedance analyzer and spectrophotometer respectively.The results indicate that ZrW2O8 thin films with negative thermal expansion property can be presented after annealing at 740 ℃ for three minutes.The calculated thermal expansion coefficient of ZrW2O8 thin films is -2.54×10-5/℃.The dielectric constant and dielectric loss at high frequency reduced with the increase of frequency.The light transmittance reaches about 75% in the visible range.
中图分类号 O484.5 TB43
所属栏目
基金项目 国家自然科学基金资助项目(50372027)
收稿日期 2006/10/17
修改稿日期 2007/1/15
网络出版日期
作者单位点击查看
备注付廷波(1980-),男,山东潍坊人,硕士研究生.
引用该论文: FU Ting-bo,CHENG Xiao-nong,YAN Xue-hua,LIU Hong-fei. Properties of ZrW2O8 Thin Films Prepared by Radio Frequency Magnetron Sputtering[J]. Materials for mechancial engineering, 2007, 31(8): 26～28
付廷波,程晓农,严学华,刘红飞. 磁控溅射法制备ZrW2O8薄膜及其性能[J]. 机械工程材料, 2007, 31(8): 26～28
被引情况:
【1】孙秀娟,程晓农,杨娟,刘芹芹, "不同酸催化溶胶-凝胶法制备负热膨胀ZrW2O8粉体及其性能",机械工程材料 40, 42-46(2016)
共有人对该论文发表了看法，其中：
人认为该论文很差
人认为该论文较差
人认为该论文一般
人认为该论文较好
人认为该论文很好
参考文献
【1】Mary T A Vansjso,Vogt T.Negative thermal expansion from 0.3 to 1 050 Kelvin in ZrW2O8[J].Science,1996,272(5):90-92.
【2】Evans J S O,Mary T A,Vogt T.Negative thermal expansion in ZrW2O8 and HfW2O8[J].Chem Mater,1996,8:2809-2823.
【3】Evans J S O,Mary T A,Sleight A W.Negative thermal expansion in large molybdate and tungstate[J].J Solid State Chem,1997,133:580-583.
【4】程晓农,孙秀娟,杨娟,等.固相法合成负热膨胀粉体ZrW2O8[J].江苏大学学报(自然科学版),2005,26(4):350-353.
【5】严学华,程晓农,张美芬.不同热处理条件对前驱体转变成ZrW2O8的影响[J].硅酸盐学报,2004,32(12):1530-1533.
【6】王聪,王天民,沈荣.新型负热膨胀氧化物材料的研究[J].物理,2001,30(12):1530-1553.
【7】郑昌琼,冉均国.新型无机材料[M].北京:科学出版社,2003:155-157.
【8】李林.薄膜科学研究进展[J].科技导报,1997(2):9-19.
【9】Michael S S,Joseph T.Micro-machined negative thermal expansion thin film[C]//The 12th International Conference on solid state sensors.Boston:2003:1148-1151.
【10】Xiao Zhaojuan,Cheng Xiaonong,Yan Xuehua.Effects of post-deposition annealing on ZrW2O8 thin films prepared by radio frequency magnetron sputtering[J].Surface & Coatings Technology,2007,201:5560-5563.
【11】周俊彪,吴建生,杨于兴.铝合金阳极氧化薄膜热膨胀性能测试分析[J].上海交通大学学报,1998,32(2):53-54.
【12】关振铎,张中太,焦金生.无机材料物理性能[M].北京:清华大学出版社,2002:287-334.
【2】Evans J S O,Mary T A,Vogt T.Negative thermal expansion in ZrW2O8 and HfW2O8[J].Chem Mater,1996,8:2809-2823.
【3】Evans J S O,Mary T A,Sleight A W.Negative thermal expansion in large molybdate and tungstate[J].J Solid State Chem,1997,133:580-583.
【4】程晓农,孙秀娟,杨娟,等.固相法合成负热膨胀粉体ZrW2O8[J].江苏大学学报(自然科学版),2005,26(4):350-353.
【5】严学华,程晓农,张美芬.不同热处理条件对前驱体转变成ZrW2O8的影响[J].硅酸盐学报,2004,32(12):1530-1533.
【6】王聪,王天民,沈荣.新型负热膨胀氧化物材料的研究[J].物理,2001,30(12):1530-1553.
【7】郑昌琼,冉均国.新型无机材料[M].北京:科学出版社,2003:155-157.
【8】李林.薄膜科学研究进展[J].科技导报,1997(2):9-19.
【9】Michael S S,Joseph T.Micro-machined negative thermal expansion thin film[C]//The 12th International Conference on solid state sensors.Boston:2003:1148-1151.
【10】Xiao Zhaojuan,Cheng Xiaonong,Yan Xuehua.Effects of post-deposition annealing on ZrW2O8 thin films prepared by radio frequency magnetron sputtering[J].Surface & Coatings Technology,2007,201:5560-5563.
【11】周俊彪,吴建生,杨于兴.铝合金阳极氧化薄膜热膨胀性能测试分析[J].上海交通大学学报,1998,32(2):53-54.
【12】关振铎,张中太,焦金生.无机材料物理性能[M].北京:清华大学出版社,2002:287-334.
相关信息
