铁基非晶薄带的压磁效应
Stress Impedance Properties of Fe-based Amorphous Alloy Ribbon
摘 要
采用单辊法制备了宽3.2 mm、厚25 μm的Fe73.5Cu1Nb3Si13.5B9非晶薄带,利用4294A型阻抗分析仪测试了非晶薄带的压磁效应.结果表明：当测试频率较低时,非晶薄带的压磁效应较弱,随着测试频率的升高,非晶薄带的压磁效应出现了明显的增强;与淬火态非晶薄带相比,退火可以改变非晶薄带的压磁效应,且经300 ℃×2 h退火后,非晶薄带的压磁效应最强,当测试压应力为1.05 MPa,测试频率为50 MHz时,淬火态非晶薄带的压磁效应为0.75%,而退火后非晶薄带的压磁效应可达0.97%.
应力
阻抗
退火
Fe-based amorphous alloy ribbons
stress
impedance
annealing
Abstract
FeCuNbSiB amorphous alloy ribbons with 25 μm thickness and 3.2 mm width were manufactured by single-roller method,the stress impedance effect of ribbons was investigated by 4294A impedance analyzer.The results show when the test frequency is lower,the stress impedance effect of ribbons is smaller,the stress impedance effect of ribbons appeare obvious strengthening along with the frequency elevating;the stress impedance effect of ribbons are changed after annealing,and the stress impedance effect of ribbons is the biggest after 300 ℃×2 h annealing ,At 50 MHz and 1.05 MPa,the stress impedance effet of 300 ℃×2 h annealed ribbons can be reached to 0.97%.but only 0.75% for quenching state ribbons.
中图分类号 O484.4
所属栏目
基金项目 国家自然科学基金资助项目(10576014)
收稿日期 2006/9/14
修改稿日期 2007/2/2
网络出版日期
作者单位点击查看
备注蒋达国(1968-),男,江西吉安人,副教授,硕士.
引用该论文: JIANG DA-guo,HUANG Qiang,ZHU Zheng-hou. Stress Impedance Properties of Fe-based Amorphous Alloy Ribbon[J]. Materials for mechancial engineering, 2007, 31(9): 4～6
蒋达国,黄强,朱正吼. 铁基非晶薄带的压磁效应[J]. 机械工程材料, 2007, 31(9): 4～6
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参考文献
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【2】Mohri K,Kawashima K,Kohzawa T,et al.Magneto inductive effect in amorphous wires[J].IEEE Trans Magn,1992,28(5):3150-3152.
【3】Panina L V,Mohri K.Magneto-lmpedance effect in amorphous wires appl[J].Phys Lett,1994,65(9):1189-1191.
【4】Kitohri T,Mohri K,Uchiyama T.Asymmetrical magneto-impedance effect in twisted amorphous wires for sensitive magnetic sensors[J].IEEE Trans Magn,1995,31(6):3137-3139.
【5】Panina LV,Mohri K,Bushida K,et al.Magneto-impedance and magnetolnductive effects in amorphous alloys[J].J Appl Phys,1994,76(10):6198-6203.
【6】Mohri K,Panina LV,Uchiyama T,et al.Sensitiveand quick response magnetoimpedance(MI)sensor using amorphous wire[J].IEEE Trans Magn,1995,31(2):1266-1275.
【7】Inada K,Mohri K,Inuzuka.Quick response large current senor using amorphous MI resonant multivibrato[J].IEEE Trans Magn,1994,30(6):4623- 4625.
【8】Takagi M,Katoh M,Mohri K,et al.Magnet displace ment sensor using MI elements for eyelid movement sensing[J].IEEE Trans Magn,1993,29(5):3340-3342.
【9】Mohri K,Kawashima,Kohzawa K,et al.Magnetoln-ductive effect in tension annealed amorphous wires and MI sensors[J].IEEE Trans Magn,1993,19(6):3168-3170.
【10】Senda M,Ishii O.Thin film magnetic field sensort-uilizing magneto impedance[J].IEEE Trans Magn,1994,30(6):4611-4613.
【11】朱正吼,宋晖,严明明,等.FeCuNbSiB非晶软磁带材的制备及其缺陷分析[J].机械工程材料,2004,28(10):48-50.
【12】杨国宁,张万里,彭斌,等.FeCoSiB单层和FeCoSiB/Cu/FeCoSiB多层磁弹性膜应力阻抗性能研究[J].磁性材料及器件,2004,35(6):22-24.
【13】茅昕辉,禹金强,周勇,等.FeSiB薄膜的巨磁阻抗和应力阻抗效应研究[J].真空科学与技术,2002,22(6):429-433.
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