碳离子注入前后单晶硅的摩擦性能对比
Comparison of Tribological Behaviour of Silicon before and after C+-implantation
摘 要
以不同剂量的碳离子注入得到不同单晶硅片试样,用原位纳米力学测试系统对其纳米硬度和弹性模量进行测定;在UMT-2型摩擦试验机上进行摩擦试验,用S-3000N型扫描电镜观察其磨损后的磨痕形貌.结果表明:碳离子注入后硅片的纳米硬度和弹性模量略高于注入前的单晶硅片,注入后硅片的减摩效果和耐磨性能在0.1~0.3 N载荷下得到了大幅度提高,当载荷增加后,摩擦因数迅速增加并产生磨损痕迹;离子注入前后单晶硅片的磨损机制近似,都以涂抹形貌为主,局部出现剥落现象.
离子注入
摩擦磨损
single-crystal silicon
ion implantation
friction and wear
Abstract
The single crystal silicon wafer was implanted by carbon ion with different implantation doses.The changes of hardness and elastic modulus of silicon implanted by carbon ion were studied on the in-situ nano-mechanical testing system.The sliding tests on silicon wafer and the C+-implanted silicon wafer were performed on the UMT-2 Tribometer.The morphology of worn surface was observed with the S-3 000 N Scanning Electron Microscope.The nano-hardness and elastic modulus increase for the C+-implanted silicon wafer.Friction-reducing effect of the C+-implanted silicon wafer improve and its friction coefficient decrease to a great extent.Wear mechanisms of the single crystal silicon and silicon implanted by carbon ion are similar.
中图分类号 TB32
所属栏目
基金项目 国家自然科学基金资助项目(50405042);教育部新世纪优秀人才支持计划资助项目(NCET-06-0479);江苏省自然科学基金创新人才资助项目(BK2005403)
收稿日期 2007/3/12
修改稿日期 2007/7/6
网络出版日期
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备注吴虎城(1978-),男,江苏徐州人,硕士研究生.
引用该论文: WU Hu-cheng,ZHANG De-kun,LI Wei. Comparison of Tribological Behaviour of Silicon before and after C+-implantation[J]. Materials for mechancial engineering, 2007, 31(12): 66～68
吴虎城,张德坤,李伟. 碳离子注入前后单晶硅的摩擦性能对比[J]. 机械工程材料, 2007, 31(12): 66～68
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参考文献
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【4】Gatzen H H,Beck M.Investigations on the friction force anisotropy of the silicon lattice[J].Wear,2003,254:1122-1126.
【5】Miyamoto T,Miyake S,Kaneko R.Wear resistance of C+-implanted silicon investigated by scanning probe microscopy[J].Wear,1993,162/164:733-738.
【6】Kodali P,Hawley M,Walter K C,et al.Tribological properties of carbon-and nitrogen-implanted Si(100)[J].Wear,1997,205:144-152.
【7】张德坤,葛世荣,王庆良,等.注入能量对硅片的表面性能影响的研究[J].中国矿业大学学报,2006,35(6):713-717.
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