AlN/w-BN纳米多层膜的制备及其显微结构
Synthesis and Microstructure of AlN/w-BN Nano-multilayers
摘 要
用射频磁控溅射法在硅基片上制备了AlN、BN单层膜及AlN/BN纳米多层膜,采用X射线衍射仪、傅立叶变换红外光谱仪、小角度X射线反射仪、高分辨率透射电子显微镜和原子力显微镜等对其进行了表征.结果表明:AlN/BN多层膜具有(103)择优取向,并且当AlN层厚固定时,随着BN层厚的增加,(103)择优取向得到强化;AlN单层膜及AlN/BN纳米多层膜均呈岛状生长,多层膜界面粗糙度及表面粗糙度均随着BN层厚的增加而减小;多层膜中BN的结构与BN的层厚有关,当AlN层厚保持在4.0 nm且BN层厚为0.32～0.55 nm时,可获得晶态w-BN,当BN层厚增至0.74 nm时,BN呈非晶态.
射频磁控溅射
显微结构
AlN/w-BN nano-multilayer
RF magnetron sputtering
microstructure
Abstract
Monolithic AlN,BN films and AlN/BN multilayers were prepared by reactive RF magneron sputtering on Si substrate.The films were characterized by X-ray diffraction,fourier transform infrared spectroscopy,high-resolution transmission electron microscopy and atomic force microscopy.The results showed that the AlN/BN multilayers preferred (103) orientation,and it was strengthened with the increase of BN layer thickness.Monolithic AlN and AlN/BN multilayers showed island growth type.The interface roughness and surface roughness of AlN/BN multilayers decreased with the increase of BN layer thickness.The structure of BN layers dependeded on the thickness of BN layers.The w-BN crystalline was successfully prepared when the thickness of AlN was 4.0 nm and the thickness of BN was in the range of 032-0.55 nm,and it was amorphous when the thickness of BN was over 0.74 nm.
中图分类号 TG174.44 TG148
所属栏目 试验研究
基金项目 国家自然科学基金资助项目(50574044)
收稿日期 2007/10/9
修改稿日期 2007/11/14
网络出版日期
作者单位点击查看
备注喻利花(1964-),女,江西南昌人,副教授,硕士.
引用该论文: YU Li-hua,NONG Shang-bin,DONG Shi-run,XU Jun-hua. Synthesis and Microstructure of AlN/w-BN Nano-multilayers[J]. Materials for mechancial engineering, 2008, 32(10): 22～26
喻利花,农尚斌,董师润,许俊华. AlN/w-BN纳米多层膜的制备及其显微结构[J]. 机械工程材料, 2008, 32(10): 22～26
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