氩气与氮气流量比对磁控溅射法制备TiN薄膜的影响
Influence of Ar and N2 Flow Ratio on TiN Thin Films Prepared by Magnetron Sputtering
摘 要
用直流反应磁控溅射法在Si(100)基底上制备了TiN薄膜,采用X射线衍射仪和原子力显微镜对其结构和形貌进行了表征,利用四探针测试仪测量了TiN薄膜的方块电阻,使用紫外可见分光光度计测定了薄膜反射率;研究了溅射沉积过程中氩气与氮气流量比对TiN薄膜结构及性能的影响.结果表明:在不同氩气与氮气流量比下,所制备薄膜的主要组成相是(200)择优取向的立方相TiN;随着氩气与氮气流量比的增加,薄膜厚度逐渐增大,而表面粗糙度与电阻率先减小后增大;当氩气与氮气流量比为15∶1时,薄膜表面粗糙度和电阻率均达到最小值;TiN薄膜的反射率与氩气与氮气流量比的关系不大.
磁控溅射
氩气
氮气
流量
TiN thin films
magnetron sputtering
Ar
N2
flow
Abstract
Titanium nitride (TiN) thin films were prepared on Si(100) substrates by DC reactive magnetron sputtering method.XRD and AFM were employed to characterize the structure and morphology of the TiN thin films.The square resistances were measured using four-probe meter.The optical reflectances were measured by ultraviolet and visible spectrophotometer.The influence of Ar and N2 flow ratio on the structure and properties of TiN thin films was investigated.The results show that the main component of the thin films was cubic TiN with (200) preferred orientation at different Ar and N2 flow ratios.When the Ar and N2 flow ratio increased the thickness of the thin films increased gradually,while the surface roughness and resistivity decreased firstly then increased.The surface roughness and resistivity reached a minimum value when the Ar and N2 gas flow ratio was 15∶1.The reflectance of TiN thin films had little relation to the flow ratio of Ar and N2.
中图分类号 TB3
所属栏目 试验研究
基金项目 国家自然科学基金重点资助项目(50730007)
收稿日期 2008/8/28
修改稿日期 2008/12/31
网络出版日期
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备注刘倩(1982-),女,湖北武汉人,硕士研究生.
引用该论文: LIU Qian,LIU Ying,ZHU Xiu-rong,HU Min. Influence of Ar and N2 Flow Ratio on TiN Thin Films Prepared by Magnetron Sputtering[J]. Materials for mechancial engineering, 2009, 33(3): 8～11
刘倩,刘莹,朱秀榕,胡敏. 氩气与氮气流量比对磁控溅射法制备TiN薄膜的影响[J]. 机械工程材料, 2009, 33(3): 8～11
被引情况:
【1】王成磊,高原,卜根涛, "双层辉光等离子渗金属技术制备TiN渗层及其耐NaOH溶液腐蚀性能",机械工程材料 35, 74-77(2011)
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【7】何萌,刘国珍,仇杰,等.用激光分子束外延在Si衬底上外延生长高质量的TiN薄膜[J].物理学报,2008,57(2):1236-1240.
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