磁控溅射法制备用作铜互连阻挡层的钛-铝薄膜
Ti-Al Film Used as Diffusion Barrier for Copper Interconnection Deposited by RF Magnetron Sputtering
摘 要
采用射频磁控溅射法在Si(100)基片上首先沉积了厚度40 nm的非晶钛-铝薄膜,然后在其上又原位生长了厚度100 nm的铜薄膜,制备了铜膜/钛-铝膜/硅试样;对试样分别在400~800 ℃内进行真空退火处理,用原子力显微镜、X射线衍射仪、四探针测试仪对试样的表面形貌、结晶状态及方块电阻进行了分析.结果表明:当退火温度低于750 ℃时,试样表面平整,表面粗糙度和方块电阻均较小且基本不随退火温度的升高而改变,此时,非晶钛-铝薄膜能够起到阻挡铜向硅中扩散的作用;当退火温度在800 ℃时,试样的表面粗糙度和方块电阻急剧增大,此时,非晶钛-铝薄膜已经不能起到阻挡层的作用.
阻挡层
钛-铝薄膜
射频磁控溅射
copper interconnection
diffusion barrier
Ti-Al film
RF magnetron sputtering
Abstract
An amorphous Ti-Al film,on which Cu film was in situ prepared,was deposited on the Si (100) substrate by radio frequency (RF) magnetron sputtering to fabricate Cu(100 nm)/Ti-Al (40 nm)/Si samples.The samples were annealed in the temperature range from 400 ℃ to 800 ℃ in high vacuum and then characterized by atom force microscopy (AFM),X-ray diffraction (XRD),and four-point probe methods.The results show that,when the annealing temperature was below 750 ℃,the sample surface was smooth,and the surface root mean square roughness (Rms) and sheet resistance were smaller and did not change with the annealing temperature,and the amorphous Ti-Al film could prevent the interdiffusion between Cu and Si.However,for the sample annealed at 800 ℃,the surace root mean square roughness and sheet resistance increased dramatically,and Ti-Al film could not be used as an effective barrier anymore.
中图分类号 TN104.2 O484
所属栏目 新材料 新工艺
基金项目 “973”前期研究专项资助项目(2007CB616910);国家自然科学基金资助项目(50572021,60876055);河北省科学基金资助项目(E2008000620);教育部基金资助项目(207013);河北大学青年基金资助项目(2005Q08)
收稿日期 2008/9/18
修改稿日期 2009/3/20
网络出版日期
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备注邢金柱(1984-),男,河北石家庄人,硕士研究生.
引用该论文: XING Jin-zhu,LIU Bao-ting,HUO Ji-chuan,ZHOU Yang,LI Xiao-hong,LI Li,ZHANG Xiang-yi,PENG Ying-cai,WANG Xia. Ti-Al Film Used as Diffusion Barrier for Copper Interconnection Deposited by RF Magnetron Sputtering[J]. Materials for mechancial engineering, 2009, 33(5): 83～86
邢金柱,刘保亭,霍骥川,周阳,李晓红,李丽,张湘义,彭英才,王侠. 磁控溅射法制备用作铜互连阻挡层的钛-铝薄膜[J]. 机械工程材料, 2009, 33(5): 83～86
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【4】LAURILA T,ZEMG K,KIVILAHTI J K.TaC as a diffusion barrier between Si and Cu[J].J Appl Phys,2002,91(8):5391-5398.
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【6】ONO H,NAKANO T,OHTA T,et al.Diffusion barrier effects of transition metals for Cu/M/Si multilayers[J].Appl Phys Lett,1994,64(12):1511-1522.
【7】CHAN R,ARUNAGIRI T N,ZHANG Y,et al.A study of phosphorus diffusion into ruthenium as a copper diffusion barrier[J].Electrochem Solid-State Lett,2004(7):154-160.
【8】ARUNAGIRI T N,ZHANG Y,CHYAN O,et al.5 nm ruthenium thin film as a directly plateable copper diffusion barrier[J].Appl Phys Lett,2005,86(8):083104-083106.
【9】KIM H,DETAVENIER C,STRATEN O V D,et al.Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition[J].J Appl Phys,2005,98(1):014308-014315.
【10】LAURILA T,ZENG K J,KIVILAHTI J K,et al.Amorphous layer formation at the TaC/Cu interface in the Si/TaC/Cu metallization system[J].Appl Phys Lett,2002,80(6):938-940.
【11】FANG J S,HSU T P,CHEN G S,et al.Crystallization and failure behavior of Ta-TM(TM=Fe,Co) nanostructured/amorphous diffusion barriers for copper metallization[J].J Electonic,2006,35:15-21.
【12】FANG J S,HSU T P,KER M L,et al.Evaluation of pro-perties of Ta-Ni amorphous thin film for copper metallizatin in integrated circuits[J].J Phys Chem Solids,2007(7):046-050.
【13】SETTERA N,DAMJANOVIC D,ENG L,et al.Ferroelectric thin films:Review of materials,properties,and applications[J].J Appl Phys,2006,100(5):051606-051651.
【14】AGGARWAL S,NAFARAJ B,JENKINS I G,et al.Correlation between oxidation resistance and crystallinity of Ti3Al as barrier layer for high-density memories[J].Acta Mater,2000,48:3387-3394.
【15】LIU B T,MAKI K,AGGARWAL S,et al.Low-temperature integration of lead-based ferroelectric capacitorson Si with diffusion barrier layer[J].Appl Phys Lett,2002,80(19):3599-3602.
【16】FAN W,SAHA S,CARLISLE J A,et al.Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices[J].Appl Phys Lett,2003,82(9):1452-1454.
【17】LIN Ting-yi,CHENG Huai-yu,CHIN Tsung-shune,et al.5-nm-thick TaSiC amorphous films stabile up to 750 ℃ as a diffusion barrier for copper metallization[J].Appl Phys Lett,2007,91(15):152908-152910.
【18】OKU T,KAWAKAMI E,UEKUBO M,et al.Diffusion barrier property of TaN between Si and Cu[J].Applied Surface Science,1996,99:265-272.
【19】WANG H,TIWARI A,ZHANG X,et al.Copper diffusion characteristics in single-crystal and polycrystalline TaN[J].Appl Phys Lett,2002,81(8):1453-1455.
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