光加热悬浮区熔法制备(Mo0.85Nb0.15)Si2单相单晶体
(Mo0.85Nb0.15)Si2 Single Phase Single Crystal Prepared by Photothermal Floating Zone Melting Method
摘 要
采用光加热悬浮区熔法制备了(Mo0.85Nb0.15)Si2单晶体,研究了化学成分和生长速度对获得C40结构单晶体的影响.结果表明:采用此法可制备出表面无裂纹的(Mo0.85Nb0.15)Si2单晶体,其尺寸可达 8 mm×90 mm,晶体的生长面接近(0001)面,生长形态符合布拉维法则、周期键链(PBC)理论和小面生长理论.
单相
单晶体
(Mo0.85Nb0.15)Si2
光加热
floating zone melting
single phase
single crystal
(Mo0.85Nb0.15)Si2
photothermal heating
Abstract
(Mo0.85Nb0.15)Si2 single crystals were prepared by using photothermal heating floating-zone melting method.The effects of chemical composition and growth speed on getting the C40 single crystal were studied.The results show that the crack-free (Mo0.85Nb0.15)Si2 single crystals with 8 mm in diameter and 90 mm in length were prepared using the method.The surface of crystal growth was close to the (0001) plane.The growth morphology accorded with Bravairs law,PBC theory and facet growth theory.
中图分类号 TG146.412
所属栏目 新材料 新工艺
基金项目 国家自然科学基金资助项目(50571067);上海市浦江人才计划资助项目(05PJ14072)
收稿日期 2008/12/22
修改稿日期 2009/10/12
网络出版日期
作者单位点击查看
备注姜艳(1983-),女,土族,青海大通人,硕士研究生.
引用该论文: JIANG Yan,ZHU Ou,ZHANG Lan-ting,YU Jin-xing,WU Jian-sheng. (Mo0.85Nb0.15)Si2 Single Phase Single Crystal Prepared by Photothermal Floating Zone Melting Method[J]. Materials for mechancial engineering, 2010, 34(1): 38～40
姜艳,朱鸥,张澜庭,郁金星,吴建生. 光加热悬浮区熔法制备(Mo0.85Nb0.15)Si2单相单晶体[J]. 机械工程材料, 2010, 34(1): 38～40
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参考文献
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【13】姚连增.晶体生长基础[M].合肥:中国科技大学出版社,1995.
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