硅基BiFe0.95Mn0.05O3/Pb(Zr0.4Ti0.6)O3/BiFe0.95Mn0.05O3集成薄膜的结构及其铂电极电容器的性能
Structure of Si-Base BiFe0.95Mn0.05O3/Pb(Zr0.4Ti0.6)O3/BiFe0.95Mn0.05O3 Integrated Thin Film and Its Platinum Electrode Capacitor Properties
摘 要
用溶胶-凝胶法在Pt/Ti/SiO2/Si(001)基片上制备了BiFe0.95Mn0.05O3/Pb(Zr0.4Ti0.6)O3/BiFe0.95Mn0.05O3(BFMO/PZT/BFMO) 集成薄膜,采用X射线衍射仪分析了其物相结构;采用铁电测试仪考察了该集成薄膜与铂极构成的铁电电容器的性能.结果表明:该集成薄膜结晶较好,除BFMO、PZT及基片的衍射峰外没有其它衍射峰存在;当电场强度为0.7 MV·cm-1时,Pt/BFMO/PZT/BFMO/Pt电容器的电滞回线对称性良好,剩余极化强度为17.9 μC·cm-2,矫顽力为0.12 MV·cm-1;在电场强度为0.4 MV·cm-1下测得的铁电电容器漏电流密度为2×10-5 A·cm-2,电容器在经过1010次反转后未出现明显的疲劳现象.
掺锰铁酸铋
锆钛酸铅
漏电流
集成薄膜
sol-gel method
BiFe0.95Mn0.05O3
Pb(Zr0.4Ti0.6)O3
leakage current
integrated thin film
Abstract
BiFe0.95Mn0.05O3/Pb(Zr0.4Ti0.6)O3/BiFe0.95Mn0.05O3(BFMO/PZT/BFMO) integrated thin film was fabricated on Pt/Ti/SiO2/Si(001) substrates via sol-gel method.The phase structure of the film was analyzed by XRD,and the properties of the ferroelectric capacitor composed of the film and platinum electrode were investigated by ferroelectric tester.The results show that the crystallinity of the film was relatively good.There were no diffraction peaks but BFMO,PZT and Si substrate.When the electric field intensity was 0.7 MV·cm-1,the hysteresis loop of Pt/BFMO/PZT/BFMO/Pt capacitor had good symmetry,the residual electric polarization and coercivity were 17.9 μC·cm-2 and 0.12 MV·cm-1,respectively.Leakage current density of the capacitor was 2×10-5 A·cm-2 when the electric field intensity was 0.4 MV·cm-1.No obvious fatigue of the ferroelectric capacitor was observed after 1 010 switching cycles.
中图分类号 O484
所属栏目 新材料 新工艺
基金项目 国家“973”计划前期研究专项(2007CB616910);国家自然科学基金资助项目(60876055);高等学校博士点基金资助项目(20091301110002);河北省自然科学基金资助项目(E2008000620,E2009000207);河北省应用基础研究计划重点基础研究项目(08965124D)
收稿日期 2009/5/28
修改稿日期 2010/2/4
网络出版日期
作者单位点击查看
备注马闻良(1980-),男,河北保定人,硕士研究生.
引用该论文: MA Wen-liang,LIU Bao-ting,WANG Kuan-mao,BIAN Fang,LI Xiao-hong,ZHAO Qing-xun. Structure of Si-Base BiFe0.95Mn0.05O3/Pb(Zr0.4Ti0.6)O3/BiFe0.95Mn0.05O3 Integrated Thin Film and Its Platinum Electrode Capacitor Properties[J]. Materials for mechancial engineering, 2010, 34(4): 42～46
马闻良,刘保亭,王宽冒,边芳,李晓红,赵庆勋. 硅基BiFe0.95Mn0.05O3/Pb(Zr0.4Ti0.6)O3/BiFe0.95Mn0.05O3集成薄膜的结构及其铂电极电容器的性能[J]. 机械工程材料, 2010, 34(4): 42～46
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【4】SHEN Z Y,SHIH W Y,SHIH W H.Self-exciting,self-sensing PbZr0.53Ti0.47O3/SiO2 piezoelectric microcan-tilevers with femtogram/Hertz sensitivity[J].Appl Phys Lett,2006,89(2):023506.1-023506.3.
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【6】DAWBER M,SCOTT J F.A model for fatigue in ferroelectric perovskite thin films[J].Appl Phys Lett,2000,76(8):1060-1062.
【7】YE C,MCLNTYRE P C.Effects of chemical stability of platinum/lead zirconate titanate and iridium oxide/lead zirconate titanate interfaces on ferroelectric thin film switching reliability[J].Appl Phys Lett,2007,91(23):232906.1-232906.3.
【8】YE Z,TANG M H,CHENG C P.Simulation of polarization and butterfly hysteresis loops in bismuth layer-structural ferroelectric thin films[J].J Appl Phys,2006,100(9):094101.1-094101.5.
【9】WANG Y,GANPULE C,LIU B T.Epitaxial ferroelectric Pb(Zr,Ti)O3 thin films on Si using SrTiO3 template layers[J].Appl Phys Lett,2002,80(1):97-99.
【10】LIU B T,ZHANG X,ZHANG W T.Comparison of Pb(Zr,Ti)O3 capacitors with conductive La0.5Sr0.5CoO3 and non-conductive Bi3.25La0.75Ti3O12 layers[J].Materials letters,2007,61: 3045-3047.
【11】LIU B T,LI F,CHENG C S.Investigation of PbZr0.4Ti0.6O3 capacitors with room temperature as-grown LaNiO3 electrodes[J].J Mater Sci,2007,42:6955-6960.
【12】LI Y W,SUN J L,CHEN J.Structural,ferroelectric,dielectric,and magnetic properties of BiFeO3/PbZr0.5Ti0.5O3 multilayer films derived by chemical solution deposition[J].Appl Phys Lett,2005,87(18):182902.1-182902.3.
【13】SINGH S K,ISHIWARA H.Microstructure and frequency dependent electrical properties of Mn-substituted BiFeO3 thin films[J].J Appl Phys,2007,102(9):094109.1-094109.5.
【14】NAGARAJ B,AGGARWAL S.Leakage current mechanisms in lead-based thin-film ferroelectric capacitors[J].Physical Review B,1999,59(24):16022-16027.
【15】JU C S,CHEOL S H.Leakage current of sol-gel derived Pb.Zr,Ti.O3 thin films having Pt electrodes[J].Appl Phys Lett,1999,75(21):3411-3413.
【16】ZHONG Z Y,ISHIWARA H.Variation of leakage current mechanisms by ion substitution in BiFeO3 thin films[J].Appl Phys Lett,2009,95(11):112902.1-112902.3.
【17】MOHAMED T C,EMILIEN B,LARUENT V.Leakage current evolution versus dielectric thickness in lead zirconate titanate thin film capacitors[J].J Appl Phys,2009,105(6):061605.1-061605.7.
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