沉积温度对磁控溅射Ti/TiN多层膜光学和电学性能的影响
Effect of Deposition Temperature on Optical and Electrical Properties of Ti/TiN Multilayer Films Prepared by Magnetron Sputtering
摘 要
采用直流反应磁控溅射法于不同温度下在Si(111)基底上制备了Ti/TiN多层膜,采用X射线衍射仪和原子力显微镜对膜的物相和表面形貌进行了分析,研究了沉积温度对膜结构及其光学、电学性能的影响.结果表明:不同沉积温度下制备的Ti/TiN多层膜均由钛和TiN相组成,多层膜与单层TiN膜一样,其表面粗糙度随沉积温度的升高而减小,电阻率随沉积温度的升高显著降低;其表面形貌则比单层膜更加致密和均匀;多层膜红外反射率与其电阻率有关,当电阻率减小时,红外反射率增大.
Ti/TiN多层膜
溅射电流
沉积温度
magnetron sputtering
Ti/TiN multilayer films
sputtering current
deposition temperature
Abstract
By DC reactive magnetron sputtering method,Ti/TiN multilayer films were prepared on the Si (111) substrate at different temperatures.The phase and surface morphology of the films were studied by mean of X-ray diffraction and atomic force microscopy,respectively.The effect of the deposition temperature on the structure,optical and electrical properties of the thin-film was investigated.The results show that Ti/TiN multilayer films prepared at different temperatures were all composed of Ti and TiN.With the increase of the deposition temperature the surface roughness of the Ti/TiN multilayer film and TiN single film decreased,and the resistivity reduced significantly.The surface morphology of the multilayer film was more dense and homogenous.The multilayer film infrared reflectance was related to the resistivity.The smaller the resistivity,the larger the infrared reflectance.
中图分类号 TB3
所属栏目 试验研究
基金项目 国家自然科学基金重点项目资助(50730007)
收稿日期 2009/7/8
修改稿日期 2010/5/21
网络出版日期
作者单位点击查看
备注胡敏(1982-),女,江西南昌人,博士研究生.
引用该论文: HU Min,LIU Ying. Effect of Deposition Temperature on Optical and Electrical Properties of Ti/TiN Multilayer Films Prepared by Magnetron Sputtering[J]. Materials for mechancial engineering, 2010, 34(8): 30～32
胡敏,刘莹. 沉积温度对磁控溅射Ti/TiN多层膜光学和电学性能的影响[J]. 机械工程材料, 2010, 34(8): 30～32
共有人对该论文发表了看法，其中：
人认为该论文很差
人认为该论文较差
人认为该论文一般
人认为该论文较好
人认为该论文很好
参考文献
【1】王君丽,施雯.Cr12MoV钢表面磁控溅射Ti/TiN涂层的摩擦磨损性能研究[J].摩擦学学报,2005,25(2):126-129.
【2】OU K L.Integrity of copper-hafnium,hafnium nitride and muhilayered amorphouslike hafnium nitride metal-lization under various thickness[J].Microelectronic Engineering,2006,83(2):312-318.
【3】杨梅,舒琼,陈兢.MEMS应用中的TiN薄膜工艺研究[J].传感器技术,2006,19(5):1448-1450.
【4】WU J,MURAKAMI R,KONDO M.Effects of nitrogen gas flow and film thickness on electric properties of TiN thin film deposited at room temperature[J].International Journal of Modern Physics B,2003,17(8):1177-1182.
【5】KAWAMURA M,KUNAGAI K,ABE Y,et al.Charact-erization of TiN films prepared by Rf sputtering using metal and compound targets[J].Vacuum,1998,51(3):377-380.
【6】FLORES M,HUERTA L,ESCAMILLA R,et al.Effect of substrate bias voltage on corrosion of TiN/Ti multilayers deposited by magnetron sputtering[J].Applied Surface Science,2007,253:7192-7196.
【7】MORI T,FUKUDA S,TAKEMURA Y.Improvement of mechanical properties of Ti/TiN multilayer film deposited by sputtering[J].Surface and Coatings Technology,2001,140:122-127.
【8】龚海飞,邵天敏,张晨辉,等.TiN/Ti多层膜调制比对摩擦磨损行为影响的研究[J].无机材料学报,2008,23(4):758-762.
【9】赵彦辉,林国强,李晓娜,等.脉冲偏压对电弧离子镀Ti/TiN纳米多层薄膜显微硬度的影响[J].金属学报,2005,41(10):1006-1100.
【10】龚海飞,邵天敏,王喜眉.温度对TiN/Ti多层膜微观结构和氧化行为的影响[J].中国表面工程,2009,22(5):20-25.
【11】陈光华,邓金祥.新型电子薄膜材料[M].北京:化学工业出版社,2002.
【12】朱秀榕.氮化钛薄膜的制备及其光、电性能的研究[D].南昌:南昌大学,2008:39-40.
【13】TSAI W,DELFINO M,FAIR J A,et al.Temperature dependence of the electrical resistivity of reactively sputtered TiN films[J].Journal of Applied Physics,1993,73(9):4462-4467.
【14】徐东然,肖效光,王长征,等.退火及超声处理对ZnO薄膜结构和发光特性的影响[J].强激光与粒子束,2007,19(8):1390-1394.
【15】余志明,伍水平,魏秋平,等.基底温度和氧分压对滞留磁控溅射制备的ZnO:Al薄膜性能的影响[J].真空,2006,43(6):11-14.
【2】OU K L.Integrity of copper-hafnium,hafnium nitride and muhilayered amorphouslike hafnium nitride metal-lization under various thickness[J].Microelectronic Engineering,2006,83(2):312-318.
【3】杨梅,舒琼,陈兢.MEMS应用中的TiN薄膜工艺研究[J].传感器技术,2006,19(5):1448-1450.
【4】WU J,MURAKAMI R,KONDO M.Effects of nitrogen gas flow and film thickness on electric properties of TiN thin film deposited at room temperature[J].International Journal of Modern Physics B,2003,17(8):1177-1182.
【5】KAWAMURA M,KUNAGAI K,ABE Y,et al.Charact-erization of TiN films prepared by Rf sputtering using metal and compound targets[J].Vacuum,1998,51(3):377-380.
【6】FLORES M,HUERTA L,ESCAMILLA R,et al.Effect of substrate bias voltage on corrosion of TiN/Ti multilayers deposited by magnetron sputtering[J].Applied Surface Science,2007,253:7192-7196.
【7】MORI T,FUKUDA S,TAKEMURA Y.Improvement of mechanical properties of Ti/TiN multilayer film deposited by sputtering[J].Surface and Coatings Technology,2001,140:122-127.
【8】龚海飞,邵天敏,张晨辉,等.TiN/Ti多层膜调制比对摩擦磨损行为影响的研究[J].无机材料学报,2008,23(4):758-762.
【9】赵彦辉,林国强,李晓娜,等.脉冲偏压对电弧离子镀Ti/TiN纳米多层薄膜显微硬度的影响[J].金属学报,2005,41(10):1006-1100.
【10】龚海飞,邵天敏,王喜眉.温度对TiN/Ti多层膜微观结构和氧化行为的影响[J].中国表面工程,2009,22(5):20-25.
【11】陈光华,邓金祥.新型电子薄膜材料[M].北京:化学工业出版社,2002.
【12】朱秀榕.氮化钛薄膜的制备及其光、电性能的研究[D].南昌:南昌大学,2008:39-40.
【13】TSAI W,DELFINO M,FAIR J A,et al.Temperature dependence of the electrical resistivity of reactively sputtered TiN films[J].Journal of Applied Physics,1993,73(9):4462-4467.
【14】徐东然,肖效光,王长征,等.退火及超声处理对ZnO薄膜结构和发光特性的影响[J].强激光与粒子束,2007,19(8):1390-1394.
【15】余志明,伍水平,魏秋平,等.基底温度和氧分压对滞留磁控溅射制备的ZnO:Al薄膜性能的影响[J].真空,2006,43(6):11-14.
相关信息
