同步辐射的基本知识第六讲 同步辐射中的光刻、微加工和其他技术及其应用
Basic Knowledge of Synchrotron Radiation——Lecture No.6 Lithography, Micro-machining and Other Technologies and Their Applications in Synchrotron Radiation
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引用该论文: YANG Chuan-zheng,CHENG Guo-feng,HUANG Yue-hong. Basic Knowledge of Synchrotron Radiation——Lecture No.6 Lithography, Micro-machining and Other Technologies and Their Applications in Synchrotron Radiation[J]. Physical Testing and Chemical Analysis part A:Physical Testing, 2010, 46(1): 67～73
杨传铮,程国峰,黄月鸿. 同步辐射的基本知识第六讲 同步辐射中的光刻、微加工和其他技术及其应用[J]. 理化检验－物理分册, 2010, 46(1): 67～73
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参考文献
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【2】BECKER E W, EHRFELD W. Fabrication of microstructures with high aspect ratios and great structureal heights by synchrotron radiation lightoraphy, galvanoforming and plastic molding (LIGA process)[J]. Microelectronic Eng,1986,4: 35-56．
【3】田学红,刘刚,田扬超,等. 合肥光源深X射线光刻模拟[J]. 中国科学技术大学学报, 2002,32(6): 702-706．
【4】伊福廷,吴坚武,晋明,等. LIGA 技术的掩模制造[J]. 微细加工技术,1995(2): 33-37．
【5】田扬超,刘刚,洪义麟,等. LIGA实验站的设计和应用[J]. 中国科学技术大学学报,2007, 37(5): 387-391．
【6】刘刚,田扬超,张新夷. LIGA技术制造微反应器的研究[J]. 微细加工技术, 2002(2): 68-71．
【7】OGAWA T, YAMAYUCH A,SOGA T,et al. New dry surface-imaging process for X-ray lithography[J]. Jpn J Appl Phys, 1994,33: 1577 ．
【8】TERAKADO S, OGARA M, SUZUKI S. Synchrotron radiation excited etching of SiC film using reactive species generated by a microwave discharge[J]. J Vac Sci Technol A, 1994,12(Mar/Spr): 379．
【9】TERAKADO S, NISHINO J, MORIGAMI M,et al. Photochemical etching of GaAs using synchroyron radiation[J].Jpn J Appl Phys, 1990, 29: L709．
【10】AKAZAWA H, UTSUMI Y, URISU. Si crystal growth mediated by synchrotron radiation-stimulated hydrogen desorption [J]. Phys Rev, 1993,B47: 1546．
【11】UTSUMI Y, AKAZAWA H. Si photoepitaxy induced by synchrotron radiation[J]. 应用物理(日),1994,63:78-89．
【12】KINASHI K, NIWANO M, SAWAKUTA J,et al. Synchrotron radiation induced reaction of a condensed layer of silicon alkoxide on Si[J]. J Vac Sci Technol A, 1995,13: 1879．
【13】SATO GOTO F K, CHIKAWA J I. Solid-phase epitaxy with X-ray irradiation to grow dislocation-free silicon films at low temperature[J]. Jpn J Appl Phys,1991,30: L205．
【2】BECKER E W, EHRFELD W. Fabrication of microstructures with high aspect ratios and great structureal heights by synchrotron radiation lightoraphy, galvanoforming and plastic molding (LIGA process)[J]. Microelectronic Eng,1986,4: 35-56．
【3】田学红,刘刚,田扬超,等. 合肥光源深X射线光刻模拟[J]. 中国科学技术大学学报, 2002,32(6): 702-706．
【4】伊福廷,吴坚武,晋明,等. LIGA 技术的掩模制造[J]. 微细加工技术,1995(2): 33-37．
【5】田扬超,刘刚,洪义麟,等. LIGA实验站的设计和应用[J]. 中国科学技术大学学报,2007, 37(5): 387-391．
【6】刘刚,田扬超,张新夷. LIGA技术制造微反应器的研究[J]. 微细加工技术, 2002(2): 68-71．
【7】OGAWA T, YAMAYUCH A,SOGA T,et al. New dry surface-imaging process for X-ray lithography[J]. Jpn J Appl Phys, 1994,33: 1577 ．
【8】TERAKADO S, OGARA M, SUZUKI S. Synchrotron radiation excited etching of SiC film using reactive species generated by a microwave discharge[J]. J Vac Sci Technol A, 1994,12(Mar/Spr): 379．
【9】TERAKADO S, NISHINO J, MORIGAMI M,et al. Photochemical etching of GaAs using synchroyron radiation[J].Jpn J Appl Phys, 1990, 29: L709．
【10】AKAZAWA H, UTSUMI Y, URISU. Si crystal growth mediated by synchrotron radiation-stimulated hydrogen desorption [J]. Phys Rev, 1993,B47: 1546．
【11】UTSUMI Y, AKAZAWA H. Si photoepitaxy induced by synchrotron radiation[J]. 应用物理(日),1994,63:78-89．
【12】KINASHI K, NIWANO M, SAWAKUTA J,et al. Synchrotron radiation induced reaction of a condensed layer of silicon alkoxide on Si[J]. J Vac Sci Technol A, 1995,13: 1879．
【13】SATO GOTO F K, CHIKAWA J I. Solid-phase epitaxy with X-ray irradiation to grow dislocation-free silicon films at low temperature[J]. Jpn J Appl Phys,1991,30: L205．
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