射频磁控溅射法制备碲化铅薄膜的X射线衍射分析
XRD Analysis of PbTe Thin Films Prepared by RF Magnetron Sputtering
摘 要
采用射频磁控溅射法,在单面抛光的Si(111)衬底上制备了PbTe薄膜,利用X射线衍射法分析了溅射工艺参数如溅射功率、溅射时间、衬底温度以及退火温度对PbTe薄膜的结晶质量的影响。结果表明: 在溅射功率为30 W,溅射时间为10 min,衬底未加热时制备的薄膜具有最好的〈100〉方向的择优取向性；退火处理可以改善薄膜的结晶质量,并且退火温度越高,薄膜的结晶质量越好。
XRD
射频磁控溅射
结晶性能
PbTe thin films
XRD
RF magnetron sputtering
crystallization quality
Abstract
PbTe thin films were deposited on polished Si(111) substrates by radio frequency (RF) magnetron sputtering. The influence of sputtering parameters such as sputtering power, sputtering time, substrate temperature and annealing temperature on their crystallization quality was investigated by X-ray diffraction (XRD). The results showed that the thin films deposited with 30 W sputtering power for 10 min on not heated substrate had a strong〈100〉 preferred orientation and best quality. The crystallization of thin films can be further improved by subsequent annealing and the higher annealing temperature, the better crystallization quality.
中图分类号 TM23 TB43
所属栏目 试验与研究
基金项目
收稿日期 2009/11/17
修改稿日期
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备注隋明晓(1984-),男,硕士研究生。
引用该论文: SUI Ming-xiao,CAO Wen-tian,WANG Shu-yun,REN Wei. XRD Analysis of PbTe Thin Films Prepared by RF Magnetron Sputtering[J]. Physical Testing and Chemical Analysis part A:Physical Testing, 2010, 46(5): 288～291
隋明晓,曹文田,王书运,任 伟. 射频磁控溅射法制备碲化铅薄膜的X射线衍射分析[J]. 理化检验－物理分册, 2010, 46(5): 288～291
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参考文献
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【3】ELLINGSON R J, BEARD M C, JOHNSON J C, et al. Highly efficient multiple exciton generation in colloidal PbSe and PbS quantum dots [J]. Nano Lett, 2005,5(5): 865-871．
【4】MCDONALD S A, KONSTANTATOS G, ZHANG S G, et al. Solution-processed PbS quantum dot infrared photodetectors and photovoltaics [J]. Nat Mater, 2005, 4: 138-142．
【5】HARMAN T C, TAYLOR P J, WALSH M P, et al. Quantum dot superlattice thermoelectric materials and devices[J].Science, 2002, 297: 2229-2232．
【6】SAHAY S S, GURUSWAMY S. Epitaxial growth of PbTe film on Si substrate[J]. J Mater Sci Lett, 1998, 17: 1145-1147．
【7】MENGUI U A, ABRAMOF E, RAPPL P H O, et al. Electrical properties of PbTe doped with BaF2[J]. J Appl Phys, 2009, 105: 043709．
【8】KUMAR S, KHAN Z H, MAJEED K M A, et al. Studies on thin films of lead chalcogenides[J]. Curr Appl Phys, 2005, 5(6): 561-566．
【9】TEICHERT C, JAMNIG B, OSWALD J. Pattern formation in PbTe multilayer films[J]. Surf Sci, 2000, 454: 823-826．
【10】WANG J F, HU J J, SUN X C, et al. Structural, electrical, and optical properties of thermally evaporated nanocrystalline PbTe films [J]. J Appl Phys, 2008, 104: 053707．
【11】ERDOGAN L Y,OZNULUER T,BULBUL F, et al. Characterization of size-quantized PbTe thin films synthesized by an electrochemical co-deposition method[J]. Thin Solid Films, 2009, 517:5419-5424．
【12】JDANOV A, PELLEG J, DASHEVSKY Z, et al. Growth and characterization of PbTe films by magnetron sputtering[J]. Mater Sci Eng B, 2004, 106 :89-94．
【13】汪冬梅,吕珺,陈长奇,等. RF磁控溅射法制备ZnO薄膜的XRD分析[J]. 理化检验-物理分册,2006,42(1): 19-22．
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