Lattice Thermal Expansion Properties of Thermoelectric Materials CoSi and CrSi2
摘 要
利用动态高温X射线衍射技术分别对立方CoSi和六方CrSi2化合物在298~973 K温度范围内的晶格热膨胀性进行了研究。结果表明:化合物CoSi的点阵参数随温度升高呈线性增长关系,其平均线热膨胀系数αa和平均体热膨胀系数αV分别为1.14×10-5 K-1和3.42×10-5 K-1,两者之间符合立方晶系关系式,即3αa=αV;化合物CrSi2的点阵参数随温度升高而显著增大,其中沿a轴和c轴的平均线热膨胀系数及平均体热膨胀系数分别为αa= 0.96×10-5 K-1,αc = 0.73×10-6 K-1和 αV=2.45×10-5 K-1,三者之间符合六方晶系关系式,即2αa+αc=αV;化合物CrSi2沿a轴方向的线热膨胀系数远大于沿c轴方向的,呈较强的各向异性。
Abstract
The lattice thermal expansion properties of compounds CoSi and CrSi2 were determined by means of dynamic high temperature X-ray diffraction(HTXRD) in the temperature range of 298-973 K. The results show that the lattice parameters of CoSi increase linearly with the increase of temperature. The average linear thermal expansion coefficient αa and average volume thermal expansion coefficient αV of CoSi are 1.14×10-5 K-1 and 3.42×10-5 K-1, respectively, and they obey the law of 3αa=αV for cubic lattice. The lattice parameters of CrSi2 increase progressively with the increase of temperature. The average linear thermal expansion coefficients and average volume thermal expansion coefficient of CrSi2 are αa=0.96×10-5 K-1, αc=0.73×10-6 K-1 and αV=2.45×10-5 K-1, respectively, and they obey the law of 2αa+αc=αV for hexagonal lattice. The expansions of CrSi2 along a axis are much larger than that along c axis, so it appeared strong anisotropy.
中图分类号 TG113.22
所属栏目 试验与研究
基金项目 广西自然科学基金资助项目(0832027)
收稿日期 2009/11/16
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备注何 维(1965-),女,博士,教授。
引用该论文: HE Wei,GUO Shi-ping,WANG Xiao-hua,ZENG Ling-min. Lattice Thermal Expansion Properties of Thermoelectric Materials CoSi and CrSi2[J]. Physical Testing and Chemical Analysis part A:Physical Testing, 2010, 46(6): 343~347
何 维,郭世平,王晓华,曾令民. 热电材料CoSi和CrSi2的晶格热膨胀性[J]. 理化检验-物理分册, 2010, 46(6): 343~347
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【3】KIM S W, MISHIMA Y, CHOI D C. Effect of process conditions on the thermoelectric properties of CoSi[J]. Intermetallics, 2002, 10: 177-184.
【4】SON J Y, OKAZAKI K, MIAZOKAWA T. Photomission study of the itinerant-electron helimagnet FexCo1-x Si[J]. Phys Rev B, 2003, 68: 134447-1-4.
【5】BARTH M, WEI B, HERLACH D M. Crystal growth in undercooled melts of the intermetallic compounds FeSi and CoSi[J]. Phys Rev B,1995, 51: 3422-3428. CAO Y, YI D Q, LU B. Ternary alloying of Mo5Si3 with Zr, Ti, Co and V\[J\]. Trans Nonferrous Met Soc China, 2001, 11(5): 691-695.
【6】TOKUSHIMA T, NISHIDA I, SAKATA K, et al. The CrSi2-CoSi thermomodule and its applications[J]. Mater Sci,1969, 4: 978-984.
【7】PAN Z J, ZHANG L T, WU J S. Effects of V doping on the transport performances of CrSi2 single crystals[J]. Scrip Mater, 2007, 56: 257-260.
【8】NISHIDA I, SAKATA T. Semiconducting properties of pure and Mn-doped chromium disilicides[J]. Phys Chem Solids,1978,39: 499-505.
【9】HOHL H, RAMIREZ A P, PALSTRA T T M, et al. Thermoelectric and magnetic properties of Cr1-xVxSi solid solutions[J]. Alloys Comp, 1997, 248: 70-76.
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【11】SHISHIDO T, OKADA S, ISHIZAWA Y, et al. Molten metal flux growth and properties of CrSi2[J]. J Alloys Compds, 2004, 383: 319-321.
【12】BIRRINGER R. Nanocrystalline materials[J]. Mater Sci Eng A, 1989, 117: 33-43.
【13】徐祖耀,黄本立.中国材料工程大典[M]. 北京:化学工业出版社,2006.
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