首先采用射频磁控溅射法在单晶Si(100)衬底上沉积制备了SiC薄膜,然后将所制备的薄膜试样分别在600, 800和1 000 ℃氩气氛中退火120 min;采用X射线衍射仪和红外吸收光谱仪分析了薄膜的结构随退火温度的变化, 采用荧光分光分度计研究了薄膜的发光性能随退火温度的变化。结果表明: 室温制备的SiC薄膜为非晶态, 经600 ℃退火后薄膜结晶, 且随着退火温度的升高, 薄膜的结晶程度越来越好, 并且部分SiC结构发生了由α-SiC到β-SiC的转变; 所制备的SiC薄膜在384 和408 nm处有两个发光峰, 且两峰的强度均随退火温度的升高逐渐变强, 其中384 nm处的峰源自于SiC的发光, 408 nm处的峰源自于碳簇的发光。

First SiC films were prepared on Si(100) substrates by RF magnetron sputtering at room temperature, and then the SiC films were annealed at 600, 800 and 1 000 ℃ for 120 min in argon atmosphere. The structure of SiC films was studied with XRD and FTIR and the PL spectra of SiC films were measured by fluorescence spectrophotometer. The results show that the SiC films prepared at room temperature were amorphous and they became crystalline when being annealed at 600 ℃. The crystallinity of SiC films was improved and there was β-SiC formed with the increase of annealing temperature. There were two photoluminescence peaks at 384 and 408 nm, and the intensity of these two peaks increased with the increase of annealing temperature. The PL peak at 384 nm was due to the SiC particles while the PL peak at 408 nm was related to the carbon clusters.