掺氮ZnO薄膜的制备及其光电性能
Preparation of N-doped ZnO Films and its Optical and Electrical Properties
摘 要
在保持氩气流量一定,通过改变O2与N2的流量比,以高纯锌为靶材,通过射频磁控溅射技术在石英玻璃衬底上生长氮掺杂ZnO薄膜。采用XRD、荧光光谱、扫描电镜及皮安表对薄膜的晶体结构、光学性能、表面和截面形貌及电学性能进行了表征。结果表明：氮掺杂ZnO薄膜仍具有高度的c轴择优取向;氮以受主杂质形式存在可有效降低薄膜的电阻率;薄膜中氮含量的相对变化是影响ZnO薄膜晶体质量和光电性质的重要因素。
氮掺杂氧化锌薄膜
受主杂质
RF magnetron sputtering
N-doped ZnO film
acceptor impurity
Abstract
Keeping the ratio of Ar but changing that of O2:N2,the N-doped ZnO films were grown on quartz glass substrate by using RF magnetron sputtering with a high-purity Zn target. The crystal structure,optical and electrical properties of the films were characterized by X-ray diffraction,fluorescence spectrometry,SEM and pico-ammeter/voltage source. The results showed that the N-doped ZnO thin films had a strong c -axis preferential orientation,same as that without N-dopping. As an acceptor impurity,the amount of doped nitrogen effectively reduced the resistivity and influences the crystal structure and properties of the films.
中图分类号 TB43
所属栏目 试验与研究
基金项目 安徽省红外与低温等离子体重点实验室资助项目(2007C002107D)
收稿日期 2008/3/22
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备注沈洪雪(1981-),男,硕士研究生。
引用该论文: SHEN Hong-xue,LI He-qin,FANG Guang-zhi. Preparation of N-doped ZnO Films and its Optical and Electrical Properties[J]. Physical Testing and Chemical Analysis part A:Physical Testing, 2009, 45(1): 1～4
沈洪雪,李合琴,方广志. 掺氮ZnO薄膜的制备及其光电性能[J]. 理化检验－物理分册, 2009, 45(1): 1～4
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【10】Lim W T,Lee C H. Highly oriented ZnO thin films deposited on RU/Si substrates [J]. Thin Solid Films,1999,353:12-15．
【11】Reuss F,Kirchner C,Gruber Th,et al. Optical investigations on the annealing behavior of galliunr and nitrogen-implanted ZnO [J]. J Appl Phys,2004,95(7):3385-3390．
【12】Xiong G,Ucer K B,Williams R T,et al. Donor-acceptor pair luminescence of nitrogen-implanted ZnO single crystal [J]. J Appl Phys,2005,97(4):1-4．
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【14】王文青,陈晓伟,高军,等．纳米ZnO薄膜掺磷、硼的电学性能研究 [J].理化检验-物理分册,2003,39(1): 19-21．
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