RF磁控溅射法制备ZnO薄膜的XRD分析
XRD ANALYSIS OF ZnO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING
摘 要
采用RF磁控溅射法，在玻璃衬底上制备多晶ZnO薄膜，并对所制备的ZnO薄膜在空气气氛中进行了不同温度(350～600℃)的退火处理和600℃时N2气氛中的退火处理。利用X射线衍射分析了溅射参数如溅射功率、溅射氧分压、衬底温度以及退火处理对ZnO薄膜结晶性能的影响。结果表明，合适的衬底温度和退火处理能够提高ZnO薄膜的结晶质量。
RF磁控溅射
XRD
退火处理
结晶性能
ZnO thin film
RF magnetron sputtering
XRD
Annealing
Crystallization
Abstract
Polycrystalline ZnO films were deposited on glass substrates by radio frequency (RF) magnetron sputtering technique. The as-deposited films were annealed at various temperatures (350～600℃) in air and at 600℃ in N2. The influence of sputtering parameters such as sputtering power, O2 partial pressure, substrate temperature and annealing on the crystallization of the ZnO films was investigated by X-ray diffraction (XRD). The results show that the crystallization of the film has been promoted by desirable substrate temperature or annealing.
中图分类号 TG115.23
所属栏目
基金项目 合肥工业大学中青年科技创新群体专项资助(103-037016)
收稿日期 2005/9/19
修改稿日期
网络出版日期
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备注汪冬梅(1968-)，女，工程师、硕士。
引用该论文: WANG Dong-mei,LU Jun,CHEN Chang-qi,WU Yu-cheng,ZHENG Zhi-xiang. XRD ANALYSIS OF ZnO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING[J]. Physical Testing and Chemical Analysis part A:Physical Testing, 2006, 42(1): 19～22
汪冬梅,吕珺,陈长奇,吴玉程,郑治祥. RF磁控溅射法制备ZnO薄膜的XRD分析[J]. 理化检验－物理分册, 2006, 42(1): 19～22
被引情况:
【1】隋明晓,曹文田,王书运,任 伟, "射频磁控溅射法制备碲化铅薄膜的X射线衍射分析",理化检验－物理分册 46, 288-291(2010)
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参考文献
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【12】梁红伟,吕有明,申德振,等.利用P-MBE方法在(400)Si衬底上生长ZnO薄膜[J].发光学报, 2003,24(3): 275-278.
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【16】倪星元.平面磁控溅射氧化锌薄膜的几个问题[J].硅酸盐通报, 1996,5: 15-17.
【2】Paraguay F D, Miki-Yoshida M U, Morales J. Influence of Al, In, Cu, Fe and Sn Dopants on the Response of Thin Film ZnO Gas Sensor to Ethanol Vapor[J]. Thin Solid Films, 2000,373: 137-140.
【3】Hong H K, Shin H W, Park H S, et al. Gas Identification Using Micro Gas Sensor Array and Neural-network Pattern Recognition[J]. Sensors and Actuators B, 1996,33: 68-71.
【4】Kadot M, Miura T, Minakat M, et al. Piezoelectric and Optical Properties of ZnO Films Deposited by an Electron–cyclotron-resonance Sputtering System[J]. Journal of Crystal Growth, 2002,237-239: 523-527.
【5】Lee J l, Kang K H, Kim S K, et al. RF Sputter Deposition of the High-quality Intrinsic and n-type ZnO Window Layers for Cu (In,Ga) Se2-based Solar Cell Applications[J]. Solar Energy Materials & Solar Cells, 2000,64: 185-195.
【6】Seeber W T, Abou-Helal M O, Barth S, et al. Transparent Semiconducting ZnO: Al Thin Films Prepared by Spray Pyrolysis[J]. Materials Science in Semiconductor Processing, 1999,2: 45-55.
【7】Kim H W, Kim N H. Preparation of GaN Films on ZnO Buffer Layers by RF Magnetron Sputtering[J]. Applied Surface Science, 2004,236: 192-197.
【8】贺红波,范正修,姚振钰,等.GaN蓝光材料新型ZnO/Si外延衬底的溅射沉积[J].中国科学(E辑), 2000,30(2): 127-131.
【9】Chakrabarti S, Ganguli D, Chaudhuri S. Substrate Dependence of Preferred Orientation in Sol-gel-derived Zinc Oxide Films[J]. Materials Letters, 2004,58: 3952-3957.
【10】马 艳,杜国同,杨天鹏,等.MOCVD法生长ZnO薄膜的结构及光学特性[J].发光学报, 2004,25(3): 305-307.
【11】Lokhande B J, Patil P S, Uplane M D. Studies on Structural, Optical and Electrical Properties of Boron Doped Zinc Oxide Films Prepared by Spray Pyrolysis Technique[J]. Physica B, 2001,302-303: 59-63.
【12】梁红伟,吕有明,申德振,等.利用P-MBE方法在(400)Si衬底上生长ZnO薄膜[J].发光学报, 2003,24(3): 275-278.
【13】Kim H, Pique A, Horwitz J S, et al. Effect of Aluminum Doping on Zinc Oxide Thin Films Grown by Pulsed Laser Deposition for Organic Light-emitting Devices[J]. Thin Solid Films, 2000,377-378: 798-802.
【14】Gong H, Wang Y, Yan Z, et al. The Effect of Deposition Conditions on Structure Properties of Radio Frequency Reactive Sputtered Polycrystalline ZnO Films[J]. Materials Science in Semiconductor Processing, 2002,5: 31-34.
【15】Lee J, Li Z, Hodgson M, et al. Structural, Electrical and Transparent Properties of ZnO Thin Films Prepared by Magnetron Sputtering[J]. Current Applied Physics, 2004,4: 398-401.
【16】倪星元.平面磁控溅射氧化锌薄膜的几个问题[J].硅酸盐通报, 1996,5: 15-17.
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