溅射非晶钴硅薄膜的晶化过程及其分析
CRYSTALLIZATION PROCESS AND ITS ANALYSIS OF AMORPHOUS Co-Si FILM PREPARED BY SPUTTERING
摘 要
利用射频磁控溅射方法制备了具有CoSi2成分的非晶薄膜，对非晶薄膜的晶化过程进行了原位X射线分析。结果显示，溅射态薄膜为非晶态，而自由能-成分曲线说明非晶态合金有较低自由能。在非晶晶化过程中初生相为CoSi相，其形成由有效形成热(EHF)因素和结构因素决定。随加热温度升高，非晶薄膜晶化最终得到晶体CoSi2薄膜。
X射线分析
自由能曲线
Amorphous Co-Si film
X-ray diffraction
Gibbs free energy curve
Abstract
Crystallization process of CoSi2 thin films prepared by radio frequency magnetron sputtering have been investigated by in situ X-ray diffraction. The results show that the as-deposited Co-Si film is amorphous. The gibbs free energy-composition curve proved that amorphous phase has lower Gibbs free energy. The first formed phase during crystallization is CoSi phase, its formation is determined by EHF (effective heat of formation) and structure factors. As the temperature was elevated, the amorphous thin film finally transformed to crystalline CoSi2.
中图分类号 TB43
所属栏目
基金项目 国家自然科学基金(50131030)， 上海AM基金(0211)
收稿日期 2005/10/28
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备注李伟(1980-)，男 ，硕士研究生。
引用该论文: LI Wei,XU Chang-xue,JIANG Chuan-hai,WU Jian-sheng. CRYSTALLIZATION PROCESS AND ITS ANALYSIS OF AMORPHOUS Co-Si FILM PREPARED BY SPUTTERING[J]. Physical Testing and Chemical Analysis part A:Physical Testing, 2006, 42(4): 163～166
李伟,徐昌学,姜传海,吴建生. 溅射非晶钴硅薄膜的晶化过程及其分析[J]. 理化检验－物理分册, 2006, 42(4): 163～166
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参考文献
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【8】Jae Yeob Shim, Sang Wook Park, Hong Koo Baik. Silicide Formation in Cobalt/Amorphous Silicon[J]. Thin Solid Films, 1997,292: 31.
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