NUCLEATION AND GROWTH OF CVD DIAMOND
摘 要
应用自制的热解丝CVD装置,研究了在金刚石沉积过程中改变甲烷浓度对其形核和生长的影响。结果表明,金刚石形核后,增加甲烷浓度,仍然可以在硅基底表面继续形成新的晶核。但是甲烷浓度由0.6%逐渐增加到1.2%时,所得最终形核密度比一开始就将甲烷浓度设为1.2%的形核密度低。新晶核比先形成的晶核具有较大的长大速度,随后所有晶核尺寸逐渐趋向相同。
Abstract
The nucleation and growth of diamond was investigated by changing methane concentration during diamond deposition using the self-made hot-filament CVD apparatus. The results show that after nucleation, new nucleus can form again on the silicon substrate surface when the methane concentration increases. However, the final nucleus density obtained on gradually increasing the methane concentration from 0.6% to 1.2% is smaller than that deposited at a methane concentration of 1.2%. The growth rate of the new nuclei is larger than that of the earlier and thus all nuclei tend to have the same size.
中图分类号 TB333
所属栏目
基金项目 广东省自然科学基金项目(013004,04300026),韶关市科技计划项目(2004-14)
收稿日期 2006/3/27
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备注黄元盛(1969-),男,副教授,博士。
引用该论文: HUANG Yuan-sheng,QIU Wan-qi,LUO Cheng-ping,CHEN Ling. NUCLEATION AND GROWTH OF CVD DIAMOND[J]. Physical Testing and Chemical Analysis part A:Physical Testing, 2006, 42(8): 382~385
黄元盛,邱万奇,罗承萍,陈灵. CVD金刚石的形核和生长[J]. 理化检验-物理分册, 2006, 42(8): 382~385
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参考文献
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【8】Glozman O, Berner A, Shechtman D, et al. Influence of Cr-N Interlayer Properties on the Initial Stages of CVD Diamond Growth on Steel Substrates[J]. Diamond and Related Materials, 1998,7:597-602.
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【11】Haitao Ye, Chang Q Sun, Peter Hing, et al. Nucleation and Growth Dynamics of Diamond Films by Microwave Plasma-Enhanced Chemical Vapor Deposition (MPECVD)[J]. Surface and Coatings Technology, 2000,123:129-133.
【12】Liao Y, Chang C, Li C H, et al. Two-Step Growth of High Quality Diamond Films[J]. Thin Solid Films, 2000,368:303-306.
【13】Whitfield Michael D, Savage James A, Jackman Richard B. Nucleation and Growth of Diamond Films on Single Crystal and Polycrystalline Tungsten Substrates[J]. Diamond and Related Materials, 2000,9:262-268.
【14】Huang Yuan-Sheng, Qiu Wan-Qi, Luo Cheng-Ping. Effect of Molybdenum on Diamond Deposition and Adhesion[J]. Thin Solid Films, 2005,472(1-2):20-25.
【15】Denning P A, Stevenson D A. Influence of Substrate Topography on the Nucleation of Diamond Thin Films[J]. Appl Phys Lett, 1991,59:1562.
【16】Yugo S, Kanai T, Kimura T. Effects of Hydrogen Plasma on the Diamond Nucleation by Chemical Vapor Deposition[J]. Diamond and Related Materials, 1992,1:929-932.
【17】杨国伟.低压气相生长金刚石薄膜系统中衬底表面凹缺陷成核机制研究[J].高压物理学报, 1994,8(3):229-236.
【2】Stoner B R, Ma G H M, Wolter S D. et al. Characterization of Bias-Enhanced Nucleation of Diamond on Silicon by Invacuo Surface Analysis and Transmission Electron Microscopy[J]. Phys Rev, 1992,B45:11067.
【3】Lee S T, Lam Y W, Lin Z D, et al. Pressure Effect on Diamond Nucleation in a Hot-Filament CVD System[J]. Phys Rev B, 1997,55:15937.
【4】Chii Ruey Lin, Cheng Tzu Kuo. High Adhesion and Quality Diamond Films on Steel Substrate[J]. Diamond and Related Materials, 1998,7:903-907.
【5】Schafer L, Fryda M, Stolley T, et al. Chemical Vapor Deposition of Polycrystalline Diamond Films on High-Speed Steel[J]. Surface and Coatings Technology, 1999,116-119:447-451.
【6】Silva F J G, Baptista A P M, Pereira E, et al. Microwave Plasma Chemical Vapor Deposition Diamond Nucleation on Ferrous Substrates with Ti and Cr Interlayers[J]. Diamond and Related Materials, 2002,11:1617-1622.
【7】Ralchenko V G, Smolin A A, Pereverzev V G, et al. Diamond Deposition on Steel with CVD Tungsten Intermediate Layer[J]. Diamond and Related Materials, 1995,4:754-758.
【8】Glozman O, Berner A, Shechtman D, et al. Influence of Cr-N Interlayer Properties on the Initial Stages of CVD Diamond Growth on Steel Substrates[J]. Diamond and Related Materials, 1998,7:597-602.
【9】Borges1 C F M, Pfender E, Heberlein J. Influence of Nitrided and Carbonitrided Interlayer on Enhanced Nucleation of Diamond on Stainless Steel 304[J]. Diamond and Related Materials, 2001,10:1983-1990.
【10】曾效舒,魏秉庆,梁 吉,等.高速钢表面渗硅沉积金刚石[J].南昌大学学报(工科版), 2000,22(2):16-19.
【11】Haitao Ye, Chang Q Sun, Peter Hing, et al. Nucleation and Growth Dynamics of Diamond Films by Microwave Plasma-Enhanced Chemical Vapor Deposition (MPECVD)[J]. Surface and Coatings Technology, 2000,123:129-133.
【12】Liao Y, Chang C, Li C H, et al. Two-Step Growth of High Quality Diamond Films[J]. Thin Solid Films, 2000,368:303-306.
【13】Whitfield Michael D, Savage James A, Jackman Richard B. Nucleation and Growth of Diamond Films on Single Crystal and Polycrystalline Tungsten Substrates[J]. Diamond and Related Materials, 2000,9:262-268.
【14】Huang Yuan-Sheng, Qiu Wan-Qi, Luo Cheng-Ping. Effect of Molybdenum on Diamond Deposition and Adhesion[J]. Thin Solid Films, 2005,472(1-2):20-25.
【15】Denning P A, Stevenson D A. Influence of Substrate Topography on the Nucleation of Diamond Thin Films[J]. Appl Phys Lett, 1991,59:1562.
【16】Yugo S, Kanai T, Kimura T. Effects of Hydrogen Plasma on the Diamond Nucleation by Chemical Vapor Deposition[J]. Diamond and Related Materials, 1992,1:929-932.
【17】杨国伟.低压气相生长金刚石薄膜系统中衬底表面凹缺陷成核机制研究[J].高压物理学报, 1994,8(3):229-236.
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