射频磁控反应溅射制备ZnO/AlN双层膜的结构和性能
STRUCTURE AND PROPERTIES OF ZnO/AlN BILAYERS PREPARED BY RF MAGNETRON REACTIVE SPUTTERING
摘 要
采用射频磁控反应溅射在Si(100)衬底上制备了ZnO/AlN双层膜。使用X射线衍射仪、原子力显微镜(AFM)、LCR测试仪及荧光分光光度计等仪器对样品进行了结构、表面形貌、导电性及荧光光谱的测试,并与相同工艺下制备的ZnO单层薄膜进行了对比研究。结果表明,ZnO/AlN双层膜的c轴择优取向性优于单层ZnO薄膜,薄膜应力更小,且为压应力,晶粒尺寸大于单层膜,表面粗糙度较小,并且其电阻率更低。荧光光谱显示,ZnO/AlN双层膜的结晶质量更好。
缓冲层
表面形貌
电阻率
荧光光谱
RF magnetron reactive sputtering
Buffer layer
Surface morphology
Electrical resistivity
Fluorescence spectrum
Abstract
ZnO/AlN bilayers were deposited on Si(100) subtrate by RF magnetron reactive sputtering. The structure,surface morphology,electrical resistivities and fluorescence spectrum of the ZnO/AlN bilayers were determined by using XRD,AFM,LCR HITESTER and fluoescence spectromter. Compared with ZnO/Si films prepared by using the same processing parameter,the ZnO/AlN bilayers,with a preferred orientation in c-axis,have a litter membrance stress and root-mean-square roughness,and a lower electrical resistivity. The fluorescence spectrum shows that the crystalline quality of ZnO/AlN bilayers is better than that of ZnO/Si films.
中图分类号 TB43
所属栏目 试验技术与方法
基金项目 安徽省自然科学基金(03044703);安徽省红外与低温等离子体重点实验室(2007C002107D)
收稿日期 2007/7/10
修改稿日期
网络出版日期
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备注巫邵波(1982-),男,硕士研究生。
引用该论文: WU Shao-bo,LI He-qin,WANG Shu-zhan,GU Jin-bao,ZHAO Zhi-ming. STRUCTURE AND PROPERTIES OF ZnO/AlN BILAYERS PREPARED BY RF MAGNETRON REACTIVE SPUTTERING[J]. Physical Testing and Chemical Analysis part A:Physical Testing, 2008, 44(2): 71～74
巫邵波,李合琴,王淑占,顾金宝,赵之明. 射频磁控反应溅射制备ZnO/AlN双层膜的结构和性能[J]. 理化检验－物理分册, 2008, 44(2): 71～74
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【4】Kadota M,Miura T,Minakata M. Piezoelectric and optical properties of ZnO films deposited by an electron-cyclotron-resonance sputtering system［J］. Journal of Crystal Growth,2002,237/239(1):523-527．
【5】Lee J C,Kang K H,Kim S K,et al. RF sputter deposition of the high-quality intrinsic and n-type ZnO window layers for Cu(In,Ga)Se2-based solar cell applications［J］. Solar Energy Materials & Solar Cells,2000,64(2):185-195．
【6】Hong H K,Shin H W,Park H S,et al. Gas identification using micro gas sensor array and neural-network pattern recognition［J］. Sensors and Actuators B,1996,33(1/3):68-71．
【7】Gao W,Li Z W. ZnO thin films produced by magnetron sputtering［J］. Vacuum,2004,30(7):1155．
【8】顾金宝,李合琴,赵之明.离子束溅射与射频溅射制备的ZnO薄膜的特性分析［J］.理化检验-物理分册,2007,43(1):15-18．
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【10】Kamalasanan M N,Chandra Subhas. Sol-gel synthesis of ZnO hhin films［J］. Thin Solid Films,1996,288(1/2):112．
【11】马 艳,杜国同,杨天棚,等.MOCVD法生长ZnO薄膜的结构及光学特性［J］.发光学报,2004,25(3):305-307．
【12】王 丹,张喜田,刘春益,等.热氧化法制备纳米ZnO薄膜及其发光特性的研究［J］.功能材料,2003,34(5):570-572．
【13】Kim H,Pique A,Horwitz J S,et al. Effect of aluminum doping on Zinc oxide thin films grown by pulsed laser deposition for organic light-emitting devices［J］. Thin Solid Films,2000,377/378:798-802．
【14】丁瑞钦.制备高质量ZnO光电薄膜的关键技术［J］.电子元件与材料,2005,24(12):46-49．
【15】Lim W T,Lee C H. Highly oriented ZnO thin films deposited on Ru/Si substrates［J］. Thin Solid Films,1999,353(1/2):12-15．
【16】郑畅达,王 立. ZnO/AlN/Si(111)薄膜的外延生长和性能研究［J］.光学学报,2006,26(3):463-466．
【17】王文青,陈晓伟,高 军,等.纳米ZnO薄膜掺磷、硼的电学性能研究［J］.理化检验-物理分册,2003,39(1):19-21．
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