GE SINGLE CRYSTAL STRESS MEASUREMENT BY X-RAY METHOD
摘 要
采用Hiroshi Suzuki等人提出的新的单晶应力测量原理,结合不对称布拉格衍射技术,对锗单晶的应力进行了测量。这种方法的优点在于利用多组试验数据求解多元线性回归方程,从而消除了一般单晶应变测定方法中无应变状态下晶面间距不准确对结果所带来的影响。该法可以推广应用于其他单晶体的应力测量和高织构取向材料的X射线应力测量。
Abstract
The stresses of the Ge single crystal have been measured according to a new principle proposed by Hiroshi SUZUKI and the asymmetrical Bragg diffraction technique. Compared with the conventional methods,the new method can determine the stress by using multiple regression equations. So the effect of the reliability of the stress-free plane spacing can be avoided. The method may be applied to other single crystal materials and high textured orientation materials.
中图分类号 O782
所属栏目 试验技术与方法
基金项目
收稿日期 2007/4/9
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备注纪 红(1978-),女,工程师,博士。
引用该论文: JI Hong,WANG Chao-qun,WANG Si-ai,FENG De-Shen. GE SINGLE CRYSTAL STRESS MEASUREMENT BY X-RAY METHOD[J]. Physical Testing and Chemical Analysis part A:Physical Testing, 2008, 44(6): 303~305
纪 红,王超群,王思爱,冯德伸. X射线法测量锗单晶的应力[J]. 理化检验-物理分册, 2008, 44(6): 303~305
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参考文献
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【5】Hiroshi S,Koichi A,Hiroshi M. X-ray stress measurement method for single crystal with unknown stress-free lattice parameter[J]. The Japan Society of Applied Physics,2003,42(5A):2876-2880.
【6】黄 斌,杨延清,曾冬梅,等.单晶体应力测量的X射线衍射分析[J].科学技术与工程,2006,18(6):2991-2993.
【2】黎建明,屠海令,胡广勇,等.X射线三轴晶衍射法测量半绝缘GaAs单晶的配比[J].半导体学报,2002,(23)11:1187-1191.
【3】Dickey E C,Pdravid V,Hubbard C R. Interlamellar residual stresses in single grains of NiO-ZrO2(cubic) directionally solidified eutectics[J]. J Am Ceram Soc,1997,820(11):2773-2780.
【4】Yoshiike T,Fujji N,Kozaki S. An X-ray stress measurement method for very small areas onn single crystals[J]. J Appl Phys,1997,36(9A):5764 -5771.
【5】Hiroshi S,Koichi A,Hiroshi M. X-ray stress measurement method for single crystal with unknown stress-free lattice parameter[J]. The Japan Society of Applied Physics,2003,42(5A):2876-2880.
【6】黄 斌,杨延清,曾冬梅,等.单晶体应力测量的X射线衍射分析[J].科学技术与工程,2006,18(6):2991-2993.
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