Thermodynamic Analysis of Chemical Vapor Deposition of the SiO2/S Composite Coatings
摘 要
以二甲基二硫化物(DMDS)和正硅酸乙酯(TEOS)为反应物在25Cr35Ni合金基体上化学气相沉积SiO2/S复合涂层.应用热力学势函数法对SiO2与S的生成反应以及反应产物之间的化学反应进行了热力学计算和分析,并对化学气相沉积源物质的配比选择进行了讨论.结果表明:常压下选取预热温度773 K、沉积温度1 023 K以及适当配比的源物质化学气相沉积SiO2/S复合涂层是可行的.
Abstract
The SiO2/S composite coatings were coated by chemical vapor deposition on 25Cr35Ni alloy substrate using methyl disulfide (DMDS) and orthosilicotetraacetate (TEOS) as reactants.Thermodynamic calculation and analysis of the formation reaction of SiO2 and S and the chemical reactions among the reaction products were done by thermodynamic potential function,and the ratio of CVD source materials chosen was discussed.As shown by the experimental results,chemical vapor deposition of the SiO2/S composite coating with preheating temperature of 773 K and deposition temperature of 1 023 K under normal atmospheric pressure was feasible.
中图分类号 O657.1
所属栏目 工作简报
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收稿日期 2007/3/19
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备注周建新(1973-),男,河北昌黎人,博士研究生,主要从事表面耐高温涂层的制备及其性能研究.
引用该论文: ZHOU Jian-xin,XU Hong,QI Xue-gui,LIU A-long,XI Yun-tao. Thermodynamic Analysis of Chemical Vapor Deposition of the SiO2/S Composite Coatings[J]. Physical Testing and Chemical Analysis part B:Chemical Analysis, 2008, 44(5): 405~408
周建新,徐宏,戚学贵,刘阿龙,奚运涛. 化学气相沉积SiO2/S复合涂层的热力学分析[J]. 理化检验-化学分册, 2008, 44(5): 405~408
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参考文献
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【4】周亚栋.无机材料物理化学[M].武汉:武汉工业大学出版社,1984.
【5】Pauline Ho,Carl F Melius.Thermal study of thermochemistry of molecules in Si-O-H-C system[J].Journal of Physical Chemical,1995,99:2166-2176.
【6】陈照峰,成来飞,徐永东,等.化学气相渗透制备氧化硅基复合材料[J].航空学报,2002,23(1):43-47.
【7】郑慧雯,章娴君,王显祥.CVD法制备SiO2薄膜工艺条件的研究[J].西南师范大学学报:自然科学版,2004,29(2):251-254.
【8】Inge dhuyretter,Marie-Fran R,Gilbert F,et al.The influence of dimethyl disulfide on naphtha steam cracking[J]. Ind Eng Chem Res,2001,40:4353-4362.
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【10】刘天和,赵梦译.NBS化学热力学性质表[M].北京:中国标准出版社,1998.
【11】罗伯特.霍勒布,彼得.沃特著.气态物系的化学平衡[M].黄仲涛等译.北京:化学工业出版社,1981.
【12】赵国良,靳长德.有机物热力学数据的估算[M].北京:高等教育出版社,1983.
【13】Schneider A,Viefhaus H,Inden G,et al.Influence of H2S on metal dusting[J].Materials and Corrosion,1998,49:336-339.
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