ICP-AES Determination of Silicon in Cast Aluminum Alloy
摘 要
提出了电感耦合等离子体原子发射光谱测定铸铝合金中的高含量硅.采用正交试验方法研究了消解过程中氢氟酸用量、饱和硼酸用量、加热时间及饱和时间4因素对消解结果的影响.确定取样量为0.050 0 g,选择251.612(133) nm的谱线作为硅的分析线.在优化试验条件下,分析了两种铸铝合金已知样品(ZL 108,ZL 111A)中硅的含量,测定值与已知值相符.
Abstract
ICP-AES was applied to the determination of silicon in cast aluminum alloys.Influential factors of the digestion process,including the amount of HF and H3BO3 saturated solution used,heating time,and saturated time were studied by orthogonal testing.Amount of sample taken was 0.050 0 g,and wavelength of 251.612(133) nm was selected as analytical lines for the determination.Under the optimum conditions,the proposed method was used in the analysis of two cast aluminum alloy (ZL 108,ZL 111A),the results obtained were in consistency with the known values.
中图分类号 O657.31
所属栏目 工作简报
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收稿日期 2008/7/6
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备注喻梅(1979- ),女,重庆市人,助工,主要从事有色金属分析.
引用该论文: YU Mei,LIU Zhi-yong. ICP-AES Determination of Silicon in Cast Aluminum Alloy[J]. Physical Testing and Chemical Analysis part B:Chemical Analysis, 2009, 45(8): 901~902
喻梅,刘智勇. 电感耦合等离子体原子发射光谱法测定铸铝合金中硅含量[J]. 理化检验-化学分册, 2009, 45(8): 901~902
被引情况:
【1】苏玉霞, "电感耦合等离子体原子发射光谱法测定铝合金中8种元素的含量",理化检验-化学分册 47, 231-232(2011)
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参考文献
【1】辛仁轩.等离子体发射光谱分析[M].北京:化学工业出版社,2005:77.
【2】全国质量专业技术人员职业资格考试办公室.2006质量专业理论与实务[M].北京:中国人事出版社,2006:96.
【2】全国质量专业技术人员职业资格考试办公室.2006质量专业理论与实务[M].北京:中国人事出版社,2006:96.
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