铜层厚度及退火温度对ZnS/Cu/ZnS复合薄膜显微结构与性能的影响
Effects of Thickness of Copper Layer and Annealing Temperature on Microstructure and Properties of ZnS/Cu/ZnS Composite Film
摘 要
采用磁控溅射技术制备了不同铜层厚度的ZnS/Cu/ZnS复合薄膜, 并在不同温度(100～300 ℃)下对其进行退火处理, 研究了铜层厚度和退火温度对复合薄膜物相、表面形貌、透光率和表面电阻等的影响。结果表明: 随着铜层厚度增加, 复合薄膜的表面粗糙度逐渐减小后趋于平缓, 方块电阻逐渐下降; 当铜层厚度为16 nm时, 复合薄膜的最高透光率最大为87%, 方块电阻为62.5 Ω; 随着退火温度升高, 复合薄膜中ZnS层结晶性增强, 表面出现颗粒团簇; 在100 ℃退火后, 铜层厚度为16 nm的复合薄膜的最高透光率为89%, 方块电阻为46.3 Ω。
退火温度
透光率
电阻
ZnS/Cu/ZnS composite film
annealing temperature
optical transmittance
resistance
Abstract
ZnS/Cu/ZnS composite film with different copper layer thicknesses were deposited by magnetron sputtering technology, and then was annealed at different temperatures (at the range of 100-300 ℃). The effects of copper layer thickness on phase, surface morphology, optical transmittance and sheet resistance of the film were studied. The results show that, with the increase of copper layer thickness, roughness of composite film gradually decreased and trended to constant, and sheet resistance gradually decreased. When the thickness of copper layer was 16 nm, the peak optical transmittance was the highest, and the transmittance was 87% and sheet resistance was 62.5 Ω. With the increase of annealing temperature, the crystalline of ZnS layer improved, and particles cluster was observed. After annealing at 100 ℃, the composite film with copper layer thickness of 16 nm owned the maximum optical transmittance of 89% and the lowest resistance of 46.3 Ω.
中图分类号 TB34 DOI 10.11973/jxgccl201601012
所属栏目 新材料 新工艺新材料 新工艺
基金项目 中央高校基本科研业务费专项资金资助项目(NZ2013307); 南京航空航天大学基本科研业务费资助项目(NS2013060); 江苏省博士后基金资助项目(1202016C)
收稿日期 2014/11/29
修改稿日期 2015/11/17
网络出版日期
作者单位点击查看
备注王梦慧(1989-), 女, 安徽安庆人, 硕士研究生。
引用该论文: WANG Meng-hui,YI Ye-fan,BAO En-cheng,RAO Xiang-wei,LI Xiao-han,LIU Jin-song,LI Zi-quan. Effects of Thickness of Copper Layer and Annealing Temperature on Microstructure and Properties of ZnS/Cu/ZnS Composite Film[J]. Materials for mechancial engineering, 2016, 40(1): 47～51
王梦慧,易叶帆,鲍恩成,饶项炜,李晓涵,刘劲松,李子全. 铜层厚度及退火温度对ZnS/Cu/ZnS复合薄膜显微结构与性能的影响[J]. 机械工程材料, 2016, 40(1): 47～51
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参考文献
【1】GORDON R G. Criteria for choosing transparent conductors［J］. MRS Bull, 2000, 25(8): 52-57.
【2】MLLER J, RECH B, SPRINGER J, et al. TCO and light trapping in silicon thin film solar cells［J］. Solar Energy, 2004, 77(6): 917-930.
【3】杨光,周伟斌, 王强. 铜纳米线透明导电膜的制备与性能［J］. 机械工程材料, 2012, 36(12): 89-93.
【4】LIM S, HAN D, KIM H, et al. Cu-based multilayer transparent electrodes: a low-cost alternative to ITO electrodes in organic solar cells［J］. Solar Energy Materials and Solar Cells, 2012, 101: 170-175.
【5】GUILLEN C, HERRERO J. Influence of the film thickness on the structure, optical and electrical properties of ITO coatings deposited by sputtering at room temperature on glass and plastic substrates［J］.Semiconductor Science and Technology, 2008, 23(7):1-5.
【6】WANG F, WU M Z, WANG Y Y, et al. Influence of thickness and annealing temperature on the electrical, optical and structural properties of AZO thin films［J］. Vacuum, 2013,89:127-131.
【7】FAN J C C, BACHNER F J, FOLEY G H, et al. Transparent heat-mirror films of TiO2/Ag/TiO2 for solar-energy collection and radiation insulation［J］. Appl Phys Lett, 1974, 25(12): 693-695.
【8】SAHU D R, HUANG J L. High quality transparent conductive ZnO/Ag/ZnO multilayer films deposited at room temperature［J］. Thin Solid Films, 2006, 515(3): 876-879.
【9】JUNG Y S, CHOI Y W, LEE H C, et al. Effects of thermal treatment on the electrical and optical properties of silver-based indium tin oxide/metal/indium tin oxide structures［J］. Thin Solid Films, 2003, 440(1):278-284.
【10】PARK H K, KANG J W, NA S I, et al. Characteristics of indium-free GZO/Ag/GZO and AZO/Ag/AZO multilayer electrode grown by dual target DC sputtering at room temperature for low-cost organic photovoltaics［J］. Solar Energy Materials and Solar Cells, 2009, 93(11): 1994-2002.
【11】YU Z, LENG J, XUE W, et al. Highly flexible transparent and conductive ZnS/Ag/ZnS multilayer films prepared by ion beam assisted deposition［J］. Applied Surface Science, 2012, 258(7): 2270-2274.
【12】NEGHABI M, BEHJAT A, GHORASHI S M B, et al. The effect of annealing on structural, electrical and optical properties of nanostructured ZnS/Ag/ZnS films［J］. Thin Solid Films, 2011, 519(16): 5662-5666.
【13】KERMANI H, FALLAH H R, HAJIMAHMOODZADEH M, et al. Very low resistance ZnS/Ag/ZnS/Ag/ZnS nano-multilayer anode for organic light emitting diodes applications［J］. Applied Optics, 2013, 52(4): 780-785.
【14】KIM A, WON Y, WOO K, et al. Highly transparent low resistance ZnO/Ag nanowire/ZnO composite electrode for thin film solar cells［J］. ACS Nano, 2013, 7(2): 1081-1091.
【15】王晓静, 邵红红, 王季. 射频磁控溅射法制备MoS2/SiC双层薄膜［J］. 机械工程材料, 2012, 36(2): 68-75.
【16】LEFTHERIOTIS G, YIANOULIS P. Characterisation and stability of low-emittance multiple coatings for glazing applications［J］. Solar Energy Materials and Solar Cells, 1999, 58(2): 185-197.
【17】LIU X Y, LI Y A, LIU S, et al. ZnO/Cu/ZnO multilayer films: structure optimization and investigation on photoelectric properties［J］. Thin Solid Films, 2012, 520(16): 5372-5377.
【18】CRUPI I, BOSCARINO S, STRANO V, et al. Optimization of ZnO:Al/Ag/ZnO: Al structures for ultra-thin high-performance transparent conductive electrodes［J］. Thin Solid Films, 2012, 520(13): 4432-4435.
【19】HAACKE G. New figure of merit for transparent conductors［J］. Journal of Applied Physics, 1976, 47(9): 4086-4089.
【20】YEH C Y, LU Z W, FROYEN S, et al. Zinc blende wurtzite polytypism in semiconductors［J］. Phys Rev B, 1992, 46(16):10086-10097.
【21】李幼真, 周继承, 陈海波. 集成电路Cu金属化中的扩散阻挡层［J］. 材料导报, 2007, 21(5): 17-20.
【2】MLLER J, RECH B, SPRINGER J, et al. TCO and light trapping in silicon thin film solar cells［J］. Solar Energy, 2004, 77(6): 917-930.
【3】杨光,周伟斌, 王强. 铜纳米线透明导电膜的制备与性能［J］. 机械工程材料, 2012, 36(12): 89-93.
【4】LIM S, HAN D, KIM H, et al. Cu-based multilayer transparent electrodes: a low-cost alternative to ITO electrodes in organic solar cells［J］. Solar Energy Materials and Solar Cells, 2012, 101: 170-175.
【5】GUILLEN C, HERRERO J. Influence of the film thickness on the structure, optical and electrical properties of ITO coatings deposited by sputtering at room temperature on glass and plastic substrates［J］.Semiconductor Science and Technology, 2008, 23(7):1-5.
【6】WANG F, WU M Z, WANG Y Y, et al. Influence of thickness and annealing temperature on the electrical, optical and structural properties of AZO thin films［J］. Vacuum, 2013,89:127-131.
【7】FAN J C C, BACHNER F J, FOLEY G H, et al. Transparent heat-mirror films of TiO2/Ag/TiO2 for solar-energy collection and radiation insulation［J］. Appl Phys Lett, 1974, 25(12): 693-695.
【8】SAHU D R, HUANG J L. High quality transparent conductive ZnO/Ag/ZnO multilayer films deposited at room temperature［J］. Thin Solid Films, 2006, 515(3): 876-879.
【9】JUNG Y S, CHOI Y W, LEE H C, et al. Effects of thermal treatment on the electrical and optical properties of silver-based indium tin oxide/metal/indium tin oxide structures［J］. Thin Solid Films, 2003, 440(1):278-284.
【10】PARK H K, KANG J W, NA S I, et al. Characteristics of indium-free GZO/Ag/GZO and AZO/Ag/AZO multilayer electrode grown by dual target DC sputtering at room temperature for low-cost organic photovoltaics［J］. Solar Energy Materials and Solar Cells, 2009, 93(11): 1994-2002.
【11】YU Z, LENG J, XUE W, et al. Highly flexible transparent and conductive ZnS/Ag/ZnS multilayer films prepared by ion beam assisted deposition［J］. Applied Surface Science, 2012, 258(7): 2270-2274.
【12】NEGHABI M, BEHJAT A, GHORASHI S M B, et al. The effect of annealing on structural, electrical and optical properties of nanostructured ZnS/Ag/ZnS films［J］. Thin Solid Films, 2011, 519(16): 5662-5666.
【13】KERMANI H, FALLAH H R, HAJIMAHMOODZADEH M, et al. Very low resistance ZnS/Ag/ZnS/Ag/ZnS nano-multilayer anode for organic light emitting diodes applications［J］. Applied Optics, 2013, 52(4): 780-785.
【14】KIM A, WON Y, WOO K, et al. Highly transparent low resistance ZnO/Ag nanowire/ZnO composite electrode for thin film solar cells［J］. ACS Nano, 2013, 7(2): 1081-1091.
【15】王晓静, 邵红红, 王季. 射频磁控溅射法制备MoS2/SiC双层薄膜［J］. 机械工程材料, 2012, 36(2): 68-75.
【16】LEFTHERIOTIS G, YIANOULIS P. Characterisation and stability of low-emittance multiple coatings for glazing applications［J］. Solar Energy Materials and Solar Cells, 1999, 58(2): 185-197.
【17】LIU X Y, LI Y A, LIU S, et al. ZnO/Cu/ZnO multilayer films: structure optimization and investigation on photoelectric properties［J］. Thin Solid Films, 2012, 520(16): 5372-5377.
【18】CRUPI I, BOSCARINO S, STRANO V, et al. Optimization of ZnO:Al/Ag/ZnO: Al structures for ultra-thin high-performance transparent conductive electrodes［J］. Thin Solid Films, 2012, 520(13): 4432-4435.
【19】HAACKE G. New figure of merit for transparent conductors［J］. Journal of Applied Physics, 1976, 47(9): 4086-4089.
【20】YEH C Y, LU Z W, FROYEN S, et al. Zinc blende wurtzite polytypism in semiconductors［J］. Phys Rev B, 1992, 46(16):10086-10097.
【21】李幼真, 周继承, 陈海波. 集成电路Cu金属化中的扩散阻挡层［J］. 材料导报, 2007, 21(5): 17-20.
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