直接敷铜工艺制备Cu/AlN材料的界面结构及结合性能
Interface Structure and Bonding Properties of Cu/AlN Material Fabricated by Direct Bonded Copper Process
摘 要
通过直接敷铜（DBC）工艺，在AlN陶瓷基板表面于1 000~1 060℃的敷接温度下制备Cu/AlN材料，利用机械剥离机、场发射扫描电子显微镜和X射线衍射仪分析了Cu/AlN的界面结合强度、界面微观形貌和物相组成。结果表明：铜箔和AlN陶瓷基板间的结合强度超过了8.00 N·mm-1，铜箔和AlN陶瓷之间存在厚度约为2 μm的过渡层，过渡层中主要含有Al2O3、CuAlO2和Cu2O化合物；随着敷接温度升高，Cu/AlN的界面结合强度逐渐增大。
直接敷铜工艺
AlN陶瓷
界面结合强度
surface metallization
direct bonded copper(DBC)process
alumina nitride ceramics
interface bonding strength
Abstract
By direct bonded copper (DBC) process, Cu/AlN material was fabricated successfully on AlN ceramic substrate at bonding temperatures of 1 000-1 060℃. The bonding strength, morphology and phase composition of Cu/AlN interface were investigated by mechanic testing equipment, field emission scanning electron microscope and X-ray diffractometer. The results show that the bonding strength of Cu/AlN interface was more than 8.0 N·mm-1, a transition layer with thickness of 2 μm was found between copper foil and AlN ceramic, the transition layer was mainly composed of Al2O3, CuAlO2 and Cu2O. The bonding strength of Cu/AlN interface increased as the bonding temperature gradually went up.
中图分类号 TH145 DOI 10.11973/jxgccl201701013
所属栏目 试验研究
基金项目 上海市宝山区科委产学研项目（bkw2014124）；上海市科研计划能力建设项目（14520500300）
收稿日期 2015/11/29
修改稿日期 2016/11/15
网络出版日期
作者单位点击查看
备注谢建军(1970-),男,四川崇州人,副研究员,博士。
引用该论文: XIE Jian-jun,WANG Yu,WANG Tun,WANG Ya-li,DING Mao-mao,LI De-shan,ZHAI Tian-lei,LIN De-bao,ZHANG Lei,WU Zhi-hao,SHI Ying. Interface Structure and Bonding Properties of Cu/AlN Material Fabricated by Direct Bonded Copper Process[J]. Materials for mechancial engineering, 2017, 41(1): 61～64
谢建军,王宇,汪暾,王亚黎,丁毛毛,李德善,翟甜蕾,林德宝,章蕾,吴志豪,施鹰. 直接敷铜工艺制备Cu/AlN材料的界面结构及结合性能[J]. 机械工程材料, 2017, 41(1): 61～64
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参考文献
【1】秦明礼,曲选辉,黄栋生,等. 氮化铝(AlN)陶瓷的特性、制备及应用[J].陶瓷工程, 2000(8):39-42.
【2】岳瑞峰,王佑祥,陈春华,等. AlN陶瓷基板在空气中的热氧化行为探讨[J].硅酸盐学报,1998,26(5):555-562.
【3】彭榕,周和平,宁晓山,等. 铝/氮化铝电子陶瓷基板的制备及性能的研究[J].无机材料学报,2002,17(6):1203-1208.
【4】LEE S K, TUAN W H, WU Y Y, et al. Microstructure-thermal properties of Cu/Al2O3 bilayer prepared by direct bonding[J]. J Eur Ceram Soc, 2013, 33:277-285.
【2】岳瑞峰,王佑祥,陈春华,等. AlN陶瓷基板在空气中的热氧化行为探讨[J].硅酸盐学报,1998,26(5):555-562.
【3】彭榕,周和平,宁晓山,等. 铝/氮化铝电子陶瓷基板的制备及性能的研究[J].无机材料学报,2002,17(6):1203-1208.
【4】LEE S K, TUAN W H, WU Y Y, et al. Microstructure-thermal properties of Cu/Al2O3 bilayer prepared by direct bonding[J]. J Eur Ceram Soc, 2013, 33:277-285.
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