不同晶粒尺寸和晶向分布多晶硅片弯曲应力的有限元模拟
Finite Element Modelling for Bending Stress of Polycrystalline Silicon Wafer with Different Grain Sizes and Crystal Orientation Distributions
摘 要
采用光致发光晶向识别技术分辨多晶硅片晶向的分布情况，通过纳米压痕试验测试多晶硅片在不同晶向上的弹性模量；然后利用有限元方法建立包含晶粒尺寸和晶向分布信息的多晶硅片有限元模型，将纳米压痕试验测得的不同晶向的弹性模量带入此模型，模拟得到了不同晶粒尺寸和晶向分布下多晶硅片的弯曲应力，最后通过三点弯曲试验对模拟结果进行了验证。结果表明：多晶硅片在不同晶向上的弹性模量和硬度不同；晶向分布会影响多晶硅片的最大弯曲应力和最大挠度的位置，晶粒形状会影响多晶硅片的最大弯曲应力；减小晶粒尺寸可以降低多晶硅片的最大弯曲应力；三点弯曲试验验证了所建模型的正确性。
晶粒尺寸
晶向分布
弯曲应力
纳米压痕
polycrystalline silicon
grain size
crystal orientation distribution
bending stress
nano-indentation
Abstract
The photoluminescence (PL) technology was used to identify the crystal orientation of the polycrystalline silicon wafer, the elastic modulus of polycrystalline silicon wafer in different orientations was measured through the nano-indentation experiment. The finite element program was used to establish the polycrystalline silicon wafer finite element model containing the information of grain size and grain orientation, and then the elastic modulus got from the nano-indentation experiment were inputted to the model to obtain the bending strength of polycrystalline silicon wafer with different grain sizes and grain orientation distributions; the simulation results were verified by three-point bending experiment. The results show that elastic modulus and hardness of polycrystalline silicon wafter in different grain orientation distributions are different. The maximum bending stress value and the maximum stress position of the polycrystalline silicon wafer are affected by crystal orientation distribution. Grain shapes will affect the maximum bending stress. Reducing the grain size can reduce the maximum bending stress.The model's correction is verified by the three-point bending experiment.
中图分类号 TF533.2 TG115.5 DOI 10.11973/jxgccl201701020
所属栏目 物理模拟与数值模拟
基金项目 国家自然科学基金资助项目（51335002，51272033）
收稿日期 2015/12/29
修改稿日期 2016/12/9
网络出版日期
作者单位点击查看
备注王轶伦(1990-),男,江苏常州人,硕士研究生。
引用该论文: WANG Yi-lun,DING Jian-ning,YUAN Ning-yi,JIANG Cun-hua,CHEN Xiao. Finite Element Modelling for Bending Stress of Polycrystalline Silicon Wafer with Different Grain Sizes and Crystal Orientation Distributions[J]. Materials for mechancial engineering, 2017, 41(1): 96～102
王轶伦,丁建宁,袁宁一,姜存华,陈潇. 不同晶粒尺寸和晶向分布多晶硅片弯曲应力的有限元模拟[J]. 机械工程材料, 2017, 41(1): 96～102
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【9】解希玲, 谭毅, 李佳艳, 等. 腐蚀时间对多孔硅层形貌及多晶硅性能的影响[J]. 机械工程材料, 2011, 35(9):58-60.
【10】SCHOENFELDER S, BOHNE A, BAGDAHN J. Comparison of test methods for strength characterization of thin solar wafer[C]//22nd European Photovoltaic Solar Energy Conference. Milan, Italy:[s.n.], 2007:168-178.
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【13】郭荻子, 林鑫, 赵永庆, 等. 纳米压痕方法在材料研究中的应用[J]. 材料导报, 2011, 25(13):10-14.
【14】DING J N, MENG Y G, WEN S Z. Mechanical properties and anti wearability studies of multilayer thin coatings on cutting tools[J]. Chinese Journal of Mechanical Engineering, 2000, 13(2):102-107.
【15】OHYA T, IRI M, MUROTA K. Improvements of the incremental method for the Voronoi diagram with computational comparison of various algorithms[J]. J Oper Res Soc Japan, 1984, 27(4):306-336.
【16】MURA T. Micromechanics of defects in solids[M].[S.l.]:Springer Science & Business Media, 2012.
【17】MEYERSM M A, ASHWORTH E. A model for the effect of grain size on the yield stress of metals[J]. Philosophical Magazine A, 1982, 46(5):737-759.
【18】TVERGAARD V, HUTCHINSON J W. The stress characters of tricrystals[J]. J Am Ceram Soc, 1988, 71(3):157-163.
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