用X射线光电子能谱法（XPS）对化学水浴沉积法制得的硫化镉薄膜的成分进行表征和深度剖析。用能量为2×10³eV的Ar⁺刻蚀3 800 s，90层。对Cd3d、S2p和O1s的90个谱峰的高分辨图谱的分析和对谱峰的曲线拟合，得出以下结论：① 除最外层和玻璃基底层以外的其他层中氧元素的质量分数都在6%左右，即CdS占94%左右；② 欲获得均匀的CdS薄膜，需一次制备成型；③ 在形成CdS薄膜的诱发期主要是Cd²⁺和S^2-的结合形成CdS，此时并无CdO和Cd（OH）₂的形成；④ 由于玻璃衬底的亲水性以及氨水的分解产生的OH^-形成了生成Cd（OH）₂的条件，而CdO的存在主要是因为Cd（OH）₂在蒸发时分解产生的；⑤ 根据半定量测定，相对于94%的CdS而言，Cd（OH）₂的含量为2.7%，CdO的含量为2.2%，吸附氧的含量为1.1%。

Thin film of CdS prepared by chemical bath deposition was characterized by XPS and depth profiling. The thin film was etched with Ar⁺ (2×10³eV) for 3 800 s to give 90 layers. Through an ultimate analysis of the 90 spectrampeaks of Cd3d, S2p and O1s in the high resolution XPS spectra and applying depth profiling, the following cognitions were drawn:① besides the surface layer and the glass base liner, contents of oxygen in each of the remaining layer were around 6%, and contents of CdS were attained to 94%; ② in order to obtain an homogeneous and even thin film of CdS, the preparation should be completed in one stroke; ③ during the inducing period for formation of the thin film of CdS, binding of Cd²⁺ with S^2- was the main reaction, and that no formation of CdO and Cd(OH)₂ was found in this period; ④ causes for formation of Cd(OH)₂ were the hydrophilicity of the glass base liner and the dissociation of aqueous ammonia which gives OH^- group for forming Cd(OH)₂; while the presence of CdO was due to the decomposition of Cd(OH)₂ during evaporation. ⑤ it was found by semi-quantification that the relative contents of Cd(OH)₂, CdO and adsorbed oxygen were 2.7%, 2.2% and 1.1% respectively as in respect to the content of CdS of 94%.