新型无铅Na0.5Y0.5TiO3铁电薄膜的制备及性能
Preparation and Properties of a New Lead-free Na0.5Y0.5TiO3 Ferroelectric Thin Film
摘 要
采用射频磁控溅射法在[001]取向的掺铌钛酸锶（Nb：STO）单晶衬底上制备Na0.5Y0.5TiO3（NYT）铁电薄膜，研究了该铁电薄膜的物相组成、显微结构、铁电性能、电输运性能。结果表明：NYT薄膜具有[001]取向的外延结构，其表面平整，界面清晰，结晶质量良好；NYT薄膜具有铁电性能，其剩余极化强度为0.3 μC·cm-2，矫顽场为178 kV·cm-1；NYT薄膜/电极界面存在肖特基势垒，反偏状态的肖特基结能够显著降低NYT薄膜的漏电流密度，提高其耐压强度，肖特基结处于正偏状态时的电流传导符合陷阱态控制的空间电荷限制电流机制。
电滞回线
压电响应
肖特基势垒
epitaxial growth
ferroelectric hysteresis loop
piezo response
Schottky barrier
Abstract
Na0.5Y0.5TiO3 (NYT) ferroelectric thin film was prepared on the substrate of single-crystal niobium doped strontium titanate (Nb:STO) with[001] orientation by radio frequency magnetron sputtering. The phase composition, microstructure, ferroelectric properties and electrical transport properties of the ferroelectric thin film were studied. The results show that the NYT thin film had a[001] oriented epitaxial structure, the surface was smooth, the interface was clear, and the crystalline quality was good. The NYT thin film had ferroelectric properties with remanent polarization of 0.3 μC·cm-2 and coercive field of 178 kV·cm-1. The Schottky barrier was found at the NYT thin film/electrode interface. The reverse-biased Schottky junction decreased the leakage current density significantly and increased the breakdown electric field strength of NYT thin film. The current conduction in the forward-biased state of Schottky junction complied with the space charge limited current mechanism controlled by trapping state.
中图分类号 O469 DOI 10.11973/jxgccl201805007
所属栏目 新材料 新工艺
基金项目 河北省自然科学基金青年科学基金资助项目（206020315045）；河北省教育厅高等学校科学技术研究项目（205020516524）
收稿日期 2018/1/25
修改稿日期 2018/4/5
网络出版日期
作者单位点击查看
备注刘修锋(1992-),男,山东费县人,硕士研究生
引用该论文: LIU Xiufeng,GE Yangyang,GE Dayong,LI Jiahui,GUO Cong,DAI Xiuhong,LIU Baoting. Preparation and Properties of a New Lead-free Na0.5Y0.5TiO3 Ferroelectric Thin Film[J]. Materials for mechancial engineering, 2018, 42(5): 35～39
刘修锋,葛洋洋,葛大勇,李佳慧,郭聪,代秀红,刘保亭. 新型无铅Na0.5Y0.5TiO3铁电薄膜的制备及性能[J]. 机械工程材料, 2018, 42(5): 35～39
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【4】MA J, HU J, LI Z, et al. Recent progress in multiferroic magnetoelectric composites:From bulk to thin films[J]. Advanced Materials, 2011, 23(9):1062-1087.
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【9】PINTILIE L, BOERASU I, GOMES M J M, et al. Metal-ferroelectric-metal structures with Schottky contacts. Ⅱ. Analysis of the experimental current-voltage and capacitance-voltage characteristics of Pb(Zr, Ti)O3 thin films[J]. Journal of Applied Physics, 2005, 98(12):2107-2107.
【10】付跃举, 刘保亭, 郭颖楠,等. 沉积温度对磁控溅射法制备La0.5Sr0.5CoO3薄膜微结构和导电性能的影响[J]. 机械工程材料, 2009, 33(4):18-21.
【11】黄佳佳, 张勇, 陈继春. 高储能密度介电材料的研究进展[J]. 材料导报, 2009, 23(增刊2):307-312.
【12】YU K, NIU Y, XIANG F, et al. Enhanced electric breakdown strength and high energy density of barium titanate filled polymer nanocomposites[J]. Journal of Applied Physics, 2013, 114(17):339-339.
【13】SHANG D S, WANG Q, CHEN L D, et al. Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag/La0.7Ca0.3MnO3/Pt heterostructures[J]. Physical Review B, 2006, 73(24):245427.
【14】WANG S Y, CHENG B L, WANG C, et al. Reduction of leakage current by Co doping in Pt/Ba0.5Sr0.5TiO3/Nb-SrTiO3 capacitor[J]. Applied Physics Letters, 2004, 84(20):4116-4118.
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