通过相场模型和理想晶粒生长模型，模拟了均质结构及异质结构（梯度结构和双峰结构）纯铜在退火过程中的晶粒生长。结果表明：晶界能垒变化对均质结构晶粒生长速率的影响较小；退火时间大于600 s时，均质结构晶粒的生长速率有一个较大的阶梯性变化；对于异质结构晶粒，晶界能垒越大，晶粒生长越慢；梯度结构中，小晶粒的生长速率最快，中晶粒的次之，大晶粒的最慢，且晶粒尺寸越大，晶界能垒对生长速率的影响越小；双峰结构中，晶界能垒对粗晶生长速率的影响较细晶的大，增加粗晶数目，细晶的生长速率明显降低，粗晶的生长速率增加。

The grain growth during the annealing process of pure copper with homogeneous and heterogeneous structure (gradient structure and bimodal structure) were simulated by the phase field model and the ideal grain growth model. The results show that the change of grain boundary energy barrier had little effect on the growth rate of grain with homogeneous structure. When the annealing time was longer than 600 s, the growth rate of homogeneous structural grains had a larger step change. For heterostructural grains, the greater the grain boundary energy barrier, the slower the grain growth. In the gradient structure, the growth rate of small grains was the fastest, followed by that of medium grains, and that of large grains was the slowest. The larger the grain size, the smaller the influence of the grain boundary energy barrier on the growth rate. In the bimodal structure, the grain boundary energy barrier had greater influence on the growth rate of coarse grains than the fine grains. The growth rate of fine grains significantly decreased and of coarse grains increased after increasing number of coarse grains.