镧掺杂量对Pb(1-2x/3)Lax(Ti0.99Mn0.01)O3压电陶瓷性能的影响
Effect of Lanthanum Doping Amounts on Properties ofPb<sub>(1-2x/3)Lax(Ti0.99Mn0.01)O3 Piezoelectric Ceramics
摘 要
采用固相烧结法制备了Pb（1-2x/3）Lax（Ti0.99Mn0.01）O3压电陶瓷，研究了镧掺杂量（x=0.005，0.045，0.075，0.150，物质的量分数）对压电陶瓷晶格常数、压电各向异性、介电常数、介电损耗、居里温度以及机械品质因数的影响。结果表明：随着镧掺杂量增加，压电陶瓷晶格的轴向比（c/a）减小，各向异性和四方相结构减弱，介电损耗减小，机械品质因数增大；镧的掺杂有利于压电性能的改善，但会造成压电各向异性减弱，居里温度降低，介电常数增大。
Pb(Ti0.99Mn0.01)O3压电陶瓷
居里温度
机械品质因数
lanthanum doping
Pb(Ti0.99Mn0.01)O3 piezoelectric ceramics
Curie temperature
mechanical quality factor
Abstract
Pb<sub>(1-2x/3)Lax(Ti0.99Mn0.01)O3 piezoelectric ceramics were prepared by solid-phase sintering method. The effects of lanthanum doping amount (x=0.005,0.045,0.075,0.150,mole fraction) on the lattice constant, piezoelectric anisotropy, dielectric constant, dielectric loss, Curie temperature and mechanical quality factor of the piezoelectric ceramics were studied. The results show that with increasing lanthanum doping amount, the axial ratio of the lattice (c/a) of the piezoelectric ceramics decreased, the anisotropy and the tetragonal structure was weakened, the dielectric loss was reduced, and the mechanical quality factor increased. The La doping was helpful for the improvement of the piezoelectric property, but resulted in the decrease of the piezoelectric anisotropy and the Curie temperature and the increase of the dielectric constant.
中图分类号 TM282 DOI 10.11973/jxgccl202106015
所属栏目 专题报道（电子陶瓷）
基金项目 上海材料研究所技术创新项目（21181301）
收稿日期 2021/4/9
修改稿日期 2021/5/9
网络出版日期
作者单位点击查看
备注黄建(1995-),男,山东淄博人,硕士研究生
引用该论文: HUANG Jian,ZHANG Xuewu,JIANG Chunyan,ZENG Tao,ZHUANG Xuning. Effect of Lanthanum Doping Amounts on Properties ofPb<sub>(1-2x/3)Lax(Ti0.99Mn0.01)O3 Piezoelectric Ceramics[J]. Materials for mechancial engineering, 2021, 45(6): 85～88
黄建,张学伍,蒋春燕,曾涛,庄绪宁. 镧掺杂量对Pb(1-2x/3)Lax(Ti0.99Mn0.01)O3压电陶瓷性能的影响[J]. 机械工程材料, 2021, 45(6): 85～88
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【7】欧阳明智,朱满康,侯育冬,等.高频压电器件用Co2O3改性PbTiO3基压电陶瓷[J].压电与声光,2011,33(1):130-132. OUYANG M Z,ZHU M K,HOU Y D,et al.The development of Co2O3-modified PbTiO3-based piezoelectric ceramic for high frequency devices[J].Piezoelectrics & Acoustooptics,2011,33(1):130-132.
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