In2O3掺杂量对锑基SnO2压敏电阻电气性能的影响
Influence of In2O3 Doping Amount on Electrical Properties of Sb-based SnO2 Varistors
摘 要
以SnO2粉、CoO粉、Cr2O3粉、Sb2O5粉、In2O3粉为原料,在100 MPa压力和1 300 ℃温度下烧结制备(98.85-x)SnO2-1CoO-0.05Cr2O3-0.1Sb2O5-xIn2O3(x=0,0.05,0.10,0.15,物质的量分数/%)锑基SnO2压敏电阻,研究了In2O3掺杂量对压敏电阻微观结构和电气性能的影响。结果表明:随着In2O3掺杂量的增加,锑基SnO2压敏电阻的平均晶粒尺寸减小,密度先增大后减小,非线性系数、施主密度、界面态密度和势垒高度均先增大后减小,泄漏电流密度先减小后增大,电压梯度增大。当掺杂In2O3物质的量分数为0.10%时,压敏电阻的密度达到最大,为6.82 g·cm-3,综合电气性能优良,其电压梯度、非线性系数、泄漏电流密度、施主密度、界面态密度和势垒高度分别为851 V·mm-1,32.36,1.19 μA·cm-2,4.4×1023 m-3,3.2×1016 m-2和1.44 eV。
In2O3掺杂量
电气性能
微观结构
Sb-based SnO2 varistor
In2O3 doping amount
electrical property
microstructure
Abstract
(98.85-x)SnO2-1CoO-0.05Cr2O3-0.1Sb2O5-xIn2O3 (x=0, 0.05, 0.10, 0.15, mole fraction/%) Sb-based SnO2 varistors were prepared by sintering SnO2 powder, CoO powder, Cr2O3 powder, Sb2O5 powder and In2O3 powder at a pressure of 100 MPa and a temperature of 1 300 ℃. The effect of In2O3 doping amount on the microstructure and electrical properties of varistors was studied. The results show that with increasing In2O3 doping amount, the average grain size of Sb-based SnO2 varistors decreased, the density increased first and then decreased, the nonlinear coefficient, applied density, interfacial state density and barrier height all increased first and then decreased, the leakage current density decreased first and then increased, and the voltage gradient increased. When the mole fraction of doped In2O3 was 0.10%, the varistor had the largest density of 6.82 g·cm-3 and the excellent electrical properties with voltage gradient, nonlinear coefficient, leakage current density, applied density, interfacial state density and barrier height of 851 V·mm-1,32.36,1.19 μA·cm-2,4.4×1023 m-3,3.2×1016 m-2 and 1.44 eV, respectively.
中图分类号 TB321 DOI 10.11973/jxgccl202306005
所属栏目 试验研究
基金项目 新疆维吾尔自治区自然科学基金资助项目(2022D01C21)
收稿日期 2022/4/1
修改稿日期 2023/3/15
网络出版日期
作者单位点击查看
联系人作者赵洪峰
备注王法栋(1997-),男,山东临沂人,硕士研究生
引用该论文: WANG Fadong,ZHAO Hongfeng,XIE Qingyun. Influence of In2O3 Doping Amount on Electrical Properties of Sb-based SnO2 Varistors[J]. Materials for mechancial engineering, 2023, 47(6): 25～29
王法栋,赵洪峰,谢清云. In2O3掺杂量对锑基SnO2压敏电阻电气性能的影响[J]. 机械工程材料, 2023, 47(6): 25～29
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【3】ALBERTO CERRI J,LEITE E R,GOUVÊA D,et al.Effect of cobalt(II) oxide and manganese(IV) oxide on sintering of tin(IV) oxide[J].Journal of the American Ceramic Society,1996,79(3):799-804.
【4】AGUILAR-MARTÍNEZ J A,ZAMBRANO-ROBLEDO P,GARCÍA-VILLARREAL S,et al.Effect of high content of Co3O4 on the structure,morphology,and electrical properties of (Cr,Sb)-doped SnO2 varistors[J].Ceramics International,2016,42(6):7576-7582.
【5】TOMINC S, RENIK A, SAMARDIJA Z,et al.Twinning and charge compensation in Nb2O5-doped SnO2-CoO ceramics exhibiting promising varistor characteristics[J].Ceramics International,2018,44(2):1603-1613.
【6】BUENO P R, VARELA J A, LONGO E.SnO2,ZnO and related polycrystalline compound semiconductors:An overview and review on the voltage-dependent resistance (non-ohmic) feature[J].Journal of the European Ceramic Society,2008,28(3):505-529.
【7】PONCE M A,RAMÍREZ M A,PARRA R,et al.Influence of degradation on the electrical conduction process in ZnO and SnO2-based varistors[J].Journal of Applied Physics,2010,108(7):074505.
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【13】WANG W X,WANG J F,CHEN H C,et al.Effects of In2O3 on the properties of (Co,Nb)-doped SnO2varistors[J].Journal of Physics D:Applied Physics,2003,36(8):1040-1043.
【14】LIU D J, WANG W Q,WANG F, et al.High nonlinear coefficient SnO2 varistors tailored by Mn2O3 doping[J].Materials Science in Semiconductor Processing,2020,117:105160.
【15】ZANG G Z, WANG J F, CHEN H C, et al.Effect of In2O3 doping and sintering on the electrical properties and the microstructure of (Co,Ta)-doped SnO2 varistors[J].Journal of Non-Crystalline Solids,2005,351(10/11):941-945.
【16】LIANG W X, ZHAO H F,FAN S H, et al.Improvement of voltage gradient and leakage current characteristics of Mn2O3 and In2O3 added SnO2-ZnO-Ta2O5 based varistor[J].Materials Science in Semiconductor Processing,2021,124:105582.
【17】KATO T,HORI A,YAMASHITA S,et al.Development of new zinc-oxide varistor with higher threshold voltage for compact arresters[J].IEEJ Transactions on Power and Energy,2000,120(7):968-974.
【18】TOMINC S,RECNIK A, SAMARDZIJA Z, et al.Twinning and charge compensation in Nb2O5-doped SnO2-CoO ceramics exhibiting promising varistor characteristics[J].Ceramics International,2018,44(2):1603-1613.
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【20】HU G L,ZHU J F,YANG H B,et al.Effect of Cr2O3 addition on the microstructure and electrical properties of SnO2-based varistor[J].Journal of Materials Science:Materials in Electronics,2013,24(6):1735-1740.
【21】BUENO P R,DE CASSIA-SANTOS M R,LEITE E R,et al.Nature of the Schottky-type barrier of highly dense SnO2 systems displaying nonohmic behavior[J].Journal of Applied Physics,2000,88(11):6545-6548.
【22】LU Z Y,CHEN Z W,WU J Q.SnO2-based varistors capable of withstanding surge current[J].Journal of the Ceramic Society of Japan,2009,117(1367):851-855.
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