以交联后的聚硅氧烷为前驱体，在不同温度（730~780℃）、外加电场强度（20~60 V·mm^-1）和限流电流（0.5~2.0 A）下采用闪速烧结技术制备SiOC陶瓷，获得合适的工艺参数，并研究了陶瓷的微观结构、物理性能和热稳定性能。结果表明：成功制备SiOC陶瓷的温度范围为740~780℃，限流电流范围为1.0~2.0 A，外加电场强度范围为30~60 V·mm^-1，试验温度比1 400℃传统热解温度低660~620℃，热解时间大大缩短。随着外加电场强度、试验温度或限流电流的增加，陶瓷中SiC含量增加，SiO₂含量减少，陶瓷产率和体积密度降低，线变化率和显气孔率增大；与1 400℃传统热解SiOC陶瓷相比，闪速烧结SiOC陶瓷的热稳定性温度提高了约112℃，且随着外加电场强度、试验温度或限流电流的增加，热稳定性提高。

By taking the cross-linked polysiloxane as precursor, SiOC ceramics were prepared by flash sintering at different temperatures (730-780℃), applied electric field intensities (20-60 V·mm^-1) and limiting currents (0.5-2.0 A), and the suitable process parameters were obtained. The microstructure, physical properties and thermal stability of the ceramics were studied. The results show that the temperature range for successfully preparing SiOC ceramics was 740-780℃, the limiting current range was 1.0-2.0 A, and the applied electric field intensity range was 30-60 V·mm^-1; the test temperature was 660-620℃ lower than the traditional pyrolysis temperature (1 400℃), and the pyrolysis time was greatly shortened. As the applied electric field intensity, test temperature or limiting current increased, the SiC content in the ceramics increased, the SiO₂ content decreased, the ceramic yield and bulk density decreased, and the linear change rate and apparent porosity increased. Compared with that of the traditional pyrolyzed SiOC ceramics at 1 400℃, the thermal stability temperature of flash-sintered SiOC ceramics increased by about 112℃, and with increasing applied electric field intensity, test temperature or limiting current, the thermal stability improved.