Effect of Coarse SiC Particles on Thermal Shock Resistance of Recrystallized Silicon Carbide Ceramics
摘 要
研究了粗碳化硅(SiC)颗粒的加入对再结晶碳化硅陶瓷(R-SiC)抗热震性能的影响;通过不同温度下热震(水淬试验)后测试不同配方陶瓷的残余强度来评价其抗热震性能,并测试了R-SiC陶瓷在30~1 200℃的平均线膨胀系数,通过SEM分析了材料的显微结构及热震损伤机制.结果表明:随着粗SiC颗粒(250 μm)含量的提高,R-SiC陶瓷的密度、临界热震温差均先升后降;含有50 % 250 μm SiC颗粒陶瓷的密度最大,为2.60 g·cm-3,线膨胀系数最小,为4.60×10-6 /℃,抗热震性能最好,其临界热震温差达395℃;250 μm SiC颗粒的引入使得R-SiC在热震过程中产生大量的微裂纹,能够迅速吸收存储在材料中的弹性应变能,从而提高其抗热震性能.
Abstract
The effects of coarse particles of silicon carbide (SiC) addition on the thermal shock resistance of recrystallized silicon carbide(R-SiC) were investigated.The thermal shock resistance of the ceramics with different formulas was evaluated through residual strength measurement by thermal shock (water quenching) tests at different temperatures.The average linear thermal expansion coefficient of the R-SiC ceramics was tested at 30-120℃.The microstructure of the ceramics was analyzed by SEM and the thermal shock damage mechanism was investigated.The results show that as the increase of the coarse particle SiC (250 μm) addition,the density and critical thermal shock temperature difference of the R-SiC ceramics increased first and then decreased.The ceramic with 50 wt % addition of 250 μm SiC particles had the maximum density of 2.60 g·cm-3,the minimum thermal expansion coefficient of 4.60×10-6/℃,the best thermal shock resistance and critical thermal shock temperature difference of 395℃.A large number of microcracks formed during the R-SiC thermal shock process as the addition of 250 μm SiC particles which absorbed rapidly elastic energy deposited in the material and improved its thermal shock resistance.
中图分类号 TB332
所属栏目 材料性能及其应用
基金项目
收稿日期 2009/6/17
修改稿日期 2010/3/22
网络出版日期
作者单位点击查看
备注雷海波(1984-),男,湖南邵阳人,硕士研究生.
引用该论文: LEI Hai-bo,XIAO Han-ning,GUO Wen-ming,XIE Wen. Effect of Coarse SiC Particles on Thermal Shock Resistance of Recrystallized Silicon Carbide Ceramics[J]. Materials for mechancial engineering, 2010, 34(8): 60~63
雷海波,肖汉宁,郭文明,谢文. 粗SiC颗粒对再结晶碳化硅陶瓷抗热震性能的影响[J]. 机械工程材料, 2010, 34(8): 60~63
被引情况:
【1】肖汉宁,刘井雄,郭文明,高朋召, "工程陶瓷的技术现状与产业发展",机械工程材料 40, 1-7(2016)
【2】李发亮,孟录,张海军,张少伟, "Ca-α/β-Sialon结合刚玉复合材料的力学性能",机械工程材料 39, 73-76(2015)
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参考文献
【1】ORLOVSKAJA N,PETERLIK H,STEINKELLNER W,et al.Prediction of strength of recrystallized silicon carbide from poresize measurement[J].Journal of Materials Science,2000,35:699-705.
【2】YI Zhong-zhou,XIE Zhi-peng,HUANG Yong,et al.Study on gelcasting and properties of recrystallized silicon carbide[J].Ceramics International,2002,28:369-376.
【3】郭玉广.重结晶碳化硅陶瓷窑具的特性及生产技术[J].陶瓷,1998(5):37-38.
【4】易中周,谢志鹏.重结晶碳化硅凝胶注模成型及其性能研究[J].硅酸盐通报,2002,21(4):3-7.
【5】郭玉广.烧结温度对重结晶碳化硅抗氧化性的影响[J].耐火材料,1998,32(5):301-305.
【6】吕振林,李世斌,高积强.莫来石涂层对碳化硅材料高温抗氧化性能的影响[J].稀有金属材料与工程,2003,32(7):534-537.
【7】朱丽慧,黄清伟.反应烧结碳化硅材料的抗热震性能研究[J].耐火材料,2001,35(4):202-204.
【8】刘铭,肖俊明.提高Si3N4结合SiC制品抗热震性的研究[J].耐火材料,1996,30(2):74-76.
【9】NIKITINA T P,FILONENKO N E.Microscopic study of recrystallized SiC[J].Refractories and Industrial Ceramics,1967(3/4):257-261.
【10】KRIEGESMANN J.Microstructure control during consolidation of fine grained recrystallized silicon carbide[J].Key Engineering Materials,2004,264/268:2199-2202.
【11】MONTEVERDE F,SCATTEIA L.Resistance to thermal shock and to oxidation of metal diborides-SiC ceramics for aerospace application[J].J Am Ceram Soc,2007,90(4):1130-1138.
【12】HASSELMAN D P H.Thermal stress resistance parameters for brittle refractory ceramics:a compendium[J].Am Ceram Soc Bull,1970,49:1033-1037.
【13】关振铎,张中太,焦金生.无机材料物理性能[M].北京:清华大学出版社,2003:151-164.
【14】袁启明.溶胶-凝胶法制备莫来石先驱粉末的烧结特性及材料显微结构变化[J].硅酸盐学报,1997(6):27-29.
【2】YI Zhong-zhou,XIE Zhi-peng,HUANG Yong,et al.Study on gelcasting and properties of recrystallized silicon carbide[J].Ceramics International,2002,28:369-376.
【3】郭玉广.重结晶碳化硅陶瓷窑具的特性及生产技术[J].陶瓷,1998(5):37-38.
【4】易中周,谢志鹏.重结晶碳化硅凝胶注模成型及其性能研究[J].硅酸盐通报,2002,21(4):3-7.
【5】郭玉广.烧结温度对重结晶碳化硅抗氧化性的影响[J].耐火材料,1998,32(5):301-305.
【6】吕振林,李世斌,高积强.莫来石涂层对碳化硅材料高温抗氧化性能的影响[J].稀有金属材料与工程,2003,32(7):534-537.
【7】朱丽慧,黄清伟.反应烧结碳化硅材料的抗热震性能研究[J].耐火材料,2001,35(4):202-204.
【8】刘铭,肖俊明.提高Si3N4结合SiC制品抗热震性的研究[J].耐火材料,1996,30(2):74-76.
【9】NIKITINA T P,FILONENKO N E.Microscopic study of recrystallized SiC[J].Refractories and Industrial Ceramics,1967(3/4):257-261.
【10】KRIEGESMANN J.Microstructure control during consolidation of fine grained recrystallized silicon carbide[J].Key Engineering Materials,2004,264/268:2199-2202.
【11】MONTEVERDE F,SCATTEIA L.Resistance to thermal shock and to oxidation of metal diborides-SiC ceramics for aerospace application[J].J Am Ceram Soc,2007,90(4):1130-1138.
【12】HASSELMAN D P H.Thermal stress resistance parameters for brittle refractory ceramics:a compendium[J].Am Ceram Soc Bull,1970,49:1033-1037.
【13】关振铎,张中太,焦金生.无机材料物理性能[M].北京:清华大学出版社,2003:151-164.
【14】袁启明.溶胶-凝胶法制备莫来石先驱粉末的烧结特性及材料显微结构变化[J].硅酸盐学报,1997(6):27-29.
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