Effect of Sintering Additive La2O3 Content on Properties of Si3N4-AlN Composite Ceramics Prepared by Hot-Pressing Sintering
摘 要
以Si3N4和AlN为原料, La2O3为烧结助剂, 在氮气气氛和1 800 ℃、30 MPa压力下热压烧结保温1 h制备出了Si3N4-AlN复相陶瓷, 研究了La2O3含量对复相陶瓷烧结性能、抗弯强度、热导率及介电损耗的影响。结果表明: 随La2O3含量的增加, 复相陶瓷的孔隙率先减小然后趋于稳定, Si3N4由α相向β相逐渐转变完全, 且含镧黄长石晶界相逐渐增多; 随La2O3含量的增加, 复相陶瓷的抗弯强度逐渐减小, 介电损耗先减小后增大, 热导率则先增大后减小; 在La2O3含量为4%时, 抗弯强度达到最大值为574 MPa; 在La2O3含量为6%时, 介电损耗最低, 同时热导率最大, 分别为4.55×10-3和11.7 W·m-1·K-1。
Abstract
Si3N4-AlN composite ceramics were prepared by hot-pressing sintering at 1 800 ℃ under 30 MPa for 1 h in nitrogen atmosphere with AlN and Si3N4 as raw materials and La2O3 as sintering additive. The effect of La2O3 content on sintering performance, bending strength, thermal conductivity and dielectric loss of the composite ceramies was investigated. The results show that with the increase of La2O3 content, the porosity of the ceramics decreased first and then reached a fixed value, the phase transformation Si3N4 from α to β was gradually completed and more lanthanum-melilites were found in the grain boundaries. With the increase of La2O3 content, bending strength of the composites decreased gradually, dielectric loss decreased first and then increased, while the thermal conductivity increased first and then decreased. When the La2O3 content was 4% the bending strength reached maximum 574 MPa. The lowest dielectric loss of 4.55×10-3 and highest thermal conductivity of 11.7 W·m-1·K-1 were obtained at a La2O3 content of 6%.
中图分类号 TQ174.1
所属栏目
基金项目 国防研制项目资助
收稿日期 2009/12/13
修改稿日期 2010/10/12
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备注徐鹏(1985-), 男, 山东淄博人, 硕士研究生。
引用该论文: XU Peng,CHEN Xing,YANG Jian,QIU Tai. Effect of Sintering Additive La2O3 Content on Properties of Si3N
徐鹏,陈兴,杨建,丘泰. 烧结助剂La2O3含量对热压烧结制备Si3N
被引情况:
【1】李发亮,孟录,张海军,张少伟, "Ca-α/β-Sialon结合刚玉复合材料的力学性能",机械工程材料 39, 73-76(2015)
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【3】SLACK G A, TANZILLI R A, POHL R O, et al. The intrinsic thermal conductivity of AlN[J].J Phys Chem Solids, 1987, 48(7): 641-647.
【4】WATARI K, HWANG H J, TORIYAMA M, et al. Effective sintering aids for low-temperature sintering of AlN ceramics[J].J Mater Res, 1999, 14(4): 1409-1417.
【5】HIRAI T, HAYASHI S, NIIHARA K. Thermal diffusivity, specific heat and thermal conductivity of chemically vapor-deposited Si3N4[J].Am Ceram Soc Bull, 1978, 57: 1126-1131.
【6】ZIEGLER G. Thermal properties and thermal shock resistance of silicon nitride[J].Progress in Nitrogen Ceramics, 1983, 27(7): 565-588.
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【8】WATARI K, SEKI Y, ISHIZAKI K. Thermal properties of HIP sintered silicon nitride[J].Seramikkusu Rombunshi, 1989, 97: 56-62.
【9】SLACK G A. Nonmetallic crystals with high thermal conductivity[J].J Phys Chem Solids, 1973, 34(2): 321-335.
【10】HAGGERTY J S, LIGHTFOOT A. Opportunities for enhancing the thermal conductivities of SiC and Si3N4 ceramics through improved processing[J].Ceram Eng Sci Proc, 1995, 16(4): 475-487.
【11】WATARI K, HIRAO K, TORIYAMA M. Effect of grain size on the thermal conductivity of Si3N4[J].J Am Ceram Soc, 1999, 82(3): 777-779.
【12】SHEN Z J, EKSTROM T, NYGREN M. Homogeneity region and thermal stability of neodymium-doped α-Sialon ceramics[J].J Am Ceram Soc, 1996, 79(3): 721-732.
【13】MANDAL H, THOMPSON D P. CeO2-doped α-Sialon ceramics[J].J Mater Sci Lett, 1996, 15(16): 1435-1438.
【14】KUME S, YASUOKA M, OMURA N, et al. Dielectric properties of sintered aluminum nitride[J].Int J Refract Met Hard Mater, 2005, 23(4/6): 382-385.
【15】PARK M K, KIM H N, LEE K S, et al. Effect of microstructure on dielectric properties of Si3N4 at microwave frequency[J].Key Eng Mater, 2005, 287: 247-252.
【16】OHNO H. Dielectric and electrical design consideration of ceramics for fusion devices[J].J Nucl Mater, 1991, 178/181: 60-63.
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