Preparation and Characterization of Nano-Al2O3 Films Deposited on HP40 Steel Surface by MOCVD
摘 要
常压下用金属有机化学气相沉积法(MOCVD), 以仲丁醇铝(ATSB)为前驱体、氮气为载气在HP40钢表面制备了纳米氧化铝薄膜;用光学显微镜、扫描电子显微镜及能谱仪、X射线衍射仪、原子力显微镜等研究了沉积温度等参数对氧化铝薄膜沉积速率的影响, 并对其形貌进行了观察。结果表明: 随着沉积温度从503 K升高到713 K, 薄膜沉积速率从0.1 mg·cm-2·h-1增加到0.82 mg·cm-2·h-1; 当沉积温度在593~653 K范围内, 可获得晶粒尺寸为10~15 nm的纳米氧化铝薄膜;反应的表观活化能随氮气与ATSB蒸气混合气流速增加而降低, 不同的混合气流速有不同的反应级数, ATSB的反应级为0.7±0.02。
Abstract
The nano alumina films on HP40 steel surface were prepared by metal organic chemical vapor deposition (MOCVD) using aluminum tri-sec-butoxide (ATSB) as precursor in nitrogen at atmospheric pressure. The effects of parameters such as deposition temperature on deposition rate of the films had been investigated using optical microscopy, scanning electron microscopy with energy dispersive X-ray spectrometer, X-ray diffraction and atomic force microscopy. The morphology was also observed. The results show that the deposition rate increased from 0.1 mg·cm-2·h-1 to 0.82 mg·cm-2·h-1 when deposition temperature increased from 503 K to 713 K. Dense nano-alumina films with grain size of 10-15 nm could be gained when the deposition temperature was in the range of 593-653 K. The apparent activation energy decreased with the increase of the N2-ATSB vapor mixture flow rate, different mixture flow rates had different reaction orders, and ATSB′s reaction order was 0.7 ± 0.02.
中图分类号 TB383
所属栏目
基金项目 上海市科委资助项目(09dz1203000)
收稿日期 2010/6/4
修改稿日期 2011/4/6
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备注黄志荣(1953-), 男, 上海人, 副教授, 博士。
引用该论文: HUANG Zhi-rong,LI Pan-yu. Preparation and Characterization of Nano-Al2O3 Films Deposited on HP40 Steel Surface by MOCVD[J]. Materials for mechancial engineering, 2011, 35(7): 58~60
黄志荣,李攀瑜. 常压下用金属有机化学气相沉积法在HP40钢表面制备纳米氧化铝薄膜及表征[J]. 机械工程材料, 2011, 35(7): 58~60
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参考文献
【1】黄志荣, 马刘宝, 李培宁.HK40钢的渗铝新工艺及抗碳化腐蚀性能研究[J].材料工程, 2005(1): 25-28.
【2】朱宁.氧化锆、氧化铝陶瓷的耐腐蚀性能[J].陶瓷科学与艺术, 2005(2): 30-33.
【3】JR REES W S. CVD of non-metals[M].New York: VCH Publishers Inc, 1996.
【4】KIM Y C, CHUN J S, LEE W J. Characterization of trime-thyl aluminum-N2O-He glow discharge in plasma-enhanced chemical vapor deposition of aluminum oxide films[J].Thin Solid Films, 1995, 258(1/2): 67-74.
【5】ANNIE T C, PIERRE G, CLUADE B. Evaluation of triisobutyl aluminium for the epitaxial growth of AlSb compared to trimethyl aluminium[J].Journal of Crystal Growth, 1981, 55(1): 125-128.
【6】黄志荣, 孙启凤, 罗小秋.HP40钢表面Al2O3薄膜制备及抑制结焦性能研究[J].材料工程, 2008(2): 18-22.
【7】NEEDHAM D J, MERKIN J H. Pattern formation through reaction and diffusion in a simple pooled—chemical system[J].Dynamical System, 1989(4): 261-284.
【8】欧阳颀.反应扩散系统中的斑图动力学[J].上海: 上海科学技术出版社, 2000.
【9】唐伟忠.薄膜材料制备原理、技术与应用[M].北京: 冶金工业出版社, 2003.
【10】李绍芬.反应工程[M].北京: 化学工业出版社, 2000.
【11】孟广耀.化学气相沉积与无机新材料[M].北京: 科学出版社, 1984.
【2】朱宁.氧化锆、氧化铝陶瓷的耐腐蚀性能[J].陶瓷科学与艺术, 2005(2): 30-33.
【3】JR REES W S. CVD of non-metals[M].New York: VCH Publishers Inc, 1996.
【4】KIM Y C, CHUN J S, LEE W J. Characterization of trime-thyl aluminum-N2O-He glow discharge in plasma-enhanced chemical vapor deposition of aluminum oxide films[J].Thin Solid Films, 1995, 258(1/2): 67-74.
【5】ANNIE T C, PIERRE G, CLUADE B. Evaluation of triisobutyl aluminium for the epitaxial growth of AlSb compared to trimethyl aluminium[J].Journal of Crystal Growth, 1981, 55(1): 125-128.
【6】黄志荣, 孙启凤, 罗小秋.HP40钢表面Al2O3薄膜制备及抑制结焦性能研究[J].材料工程, 2008(2): 18-22.
【7】NEEDHAM D J, MERKIN J H. Pattern formation through reaction and diffusion in a simple pooled—chemical system[J].Dynamical System, 1989(4): 261-284.
【8】欧阳颀.反应扩散系统中的斑图动力学[J].上海: 上海科学技术出版社, 2000.
【9】唐伟忠.薄膜材料制备原理、技术与应用[M].北京: 冶金工业出版社, 2003.
【10】李绍芬.反应工程[M].北京: 化学工业出版社, 2000.
【11】孟广耀.化学气相沉积与无机新材料[M].北京: 科学出版社, 1984.
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