SnO2纳米线的制备及其光致发光特性
Preparation and Photoluminescence Properties of SnO2 Nanowires
摘 要
采用锡单质直接氧化法在850 ℃制备了SnO2纳米线, 采用X射线衍射仪和X射线能谱仪对SnO2纳米线进行了物相分析, 用扫描电子显微镜和透射电子显微镜对其形貌进行了观察, 并在荧光光谱仪上研究了其光致发光特性。结果表明: 制备的SnO2纳米线具有正方金红石结构, 其尺寸均匀一致, 长度为数十到数百微米, 有的甚至达到数毫米, 直径约为100 nm; 其生长机理由气-固(VS)生长机制控制; 室温下, 其光致发光谱在395 nm(3.14 eV)处有一强峰, 在310 nm(4 eV)处有一弱峰, 发光主要是由单离子氧空位引起。
纳米线
气-固生长机制
光致发光
tin dioxide
nanowire
vapor-solid growth mechanism
photoluminescence
Abstract
The tin was oxidized directly to tin dioxide (SnO2) nanowires at 850 ℃. The X-ray diffractometer and X-ray energy dispersive spectrometer were used to analysis the phase, scanning electron microscopy and transmission electron microscopy were used to observe the morphology, and the photoluminescence property was studied by fluorescence spectroscopy. The results show that the nanowires prepared by this method were tetragonal rutile structure, their sizes were uniform, and the lengths were from tens to several-hundred micrometers, some even reached a few millimeters, their diameters were about 100 nm. The SnO2 nanowires growth was controlled by vapor-solid (VS) mechanism. Photoluminescence spectrum of the SnO2 nanowires showed that there were a strong peak at 395 nm (3.14 eV) and a weak peak at 310 nm (4 eV) at room temperature, and photoluminescence was attributed to oxygen vacancies.
中图分类号 TB383
所属栏目
基金项目 中央高校基本科研业务费专项资金资助项目(JUSRP11115)
收稿日期 2010/10/9
修改稿日期 2011/7/11
网络出版日期
作者单位点击查看
备注倪自丰(1981-),男,江苏盐城人,讲师,博士。
引用该论文: NI Zi-feng. Preparation and Photoluminescence Properties of SnO2 Nanowires[J]. Materials for mechancial engineering, 2011, 35(10): 95～97
倪自丰. SnO2纳米线的制备及其光致发光特性[J]. 机械工程材料, 2011, 35(10): 95～97
被引情况:
【1】李巍,陈文哲,郑婵, "Eu3+:SnO2微晶玻璃的显微结构与光致发光性能",机械工程材料 39, 60-63(2015)
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【3】XIE T, JIANG Z, WU G S, et al. Characterization and growth mechanism of germanium nitride nanowires prepared by an oxide-assisted method [J]. Journal of Crystal Growth,2005,283(3/4):286-290.
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【5】ZHANG Y J, AGO H, YUMURA M, et al. Study of the growth of boron nanowires synthesized by laser ablation [J]. Chemical Physics Letters,2004,385(3/4):177-183.
【6】JIANG X C, KEMAL L, YU A. Silver-induced growth of selenium nanowires in aqueous solution [J]. Materials Letters,2007,61(11/12):2584-2588.
【7】KOKI A, SASAKURA H. Tin oxide thin film transistors [J]. Journal of Applied Physics,1970,9:582-585.
【8】HE Y S, CAMPBELL J C, MURPHY R C, et al. Electrical and optical characterization of Sb∶SnO2 [J]. International Journal Materials Research,1993,8:3131-3134.
【9】WANG D Z, WEN S L, CHEN J, et al. Microstructure of SnO2 [J]. Physics Review B,1994,49:14282-14285.
【10】NAYRAL C, VIALA E, COLLIERE V, et al. Synthesis and use of a novel SnO2 nanomaterial for gas sensing [J]. Applied Surface Science,2000,164:219-226.
【11】LEITE E R, WEBER I T, LONGO E, et al. A new method to control particle size and particle size distribution of nanoparticles for gas sensor applications [J]. Advanced Materials,2000,12:965-968.
【12】闫君,李建,汪良.稀土Dy掺杂纳米SnO2薄膜的结构与气敏特性[J].功能材料与器件学报, 2009,15(4):321-326.
【13】LIU Y K, ZHENG C L, WANG W Z, et al. Synthesis and characterization of rutile SnO2 nanorods [J]. Advanced Materials,2001,13:1883-1887.
【14】PENG X S, ZHANG L D, MENG G W, et al. Micro-Raman and infrared properties of SnO2 nanobelts synthesized from Sn and SiO2 powders [J]. Journal of Applied Physics,2003,93:1760-1763.
【15】KIM T W, LEE D U, YOON Y S. Microstructural, electrical and optical properties of SnO2 nanocrystalline thin films grown on InP (100) substrates for applications as gas sensor devices [J]. Journal of Applied Physics,2000,88:3759-3761.
【16】HU J Q, BANDO Y, LIU Q L, et al. Laser-ablation growth and optical properties of wide and long single-crystal SnO2 ribbons [J]. Advanced Functional Materials,2003,13:493-496.
【17】WONG E M, SEARSON P C. ZnO quantum particle thin films fabricated by electrophoretic deposition [J]. Applied Physics Letters,1999,74:2939-2943.
【18】SUN S H, MENG G W, WANG Y G, et al. Large-scale synthesis of SnO2 nanobelts [J]. Applied Physics A,2003,76:287-289.
【19】SUN S H, MENG G W, ZHANG G X, et al. Raman scattering study of rutile SnO2 nanobelts synthesized by thermal evaporation of Sn powders [J]. Chemical Physics Letters,2003,376:103-107.
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