Laser Molecular Beam Epitaxial Growth Characteristics of AlN Thin Film Prepared on Si(111) and Si(100) Substrates
摘 要
采用激光分子束外延技术在Si(111)和Si(100)衬底上制备了AlN薄膜, 研究了衬底温度和激光能量对薄膜物相结构和形貌的影响。结果表明: 低的激光能量和高的衬底温度有益于薄膜的取向度和表面质量; 激光能量为100 mJ时, Si(111)衬底上的AlN薄膜呈单一的h-AlN(002)取向, Si(100)衬底上的薄膜在600 ℃时出现小的h-AlN(100)衍射峰, 在700 ℃时呈微弱的h-AlN(002)取向; 在Si(111)衬底上更易生长出取向度高的AlN薄膜。
Abstract
AlN thin film was prepared on Si(111) and Si(100) substrates by laser molecular beam epitaxy technique, and the effects of substrate temperature and laser energy on phase structure and morphology of the film were studied. The results show that the low laser energy and high substrate temperature were beneficial to orientation degree and surface quality of the film. AlN film on Si(111) substrate showed the single preferred orientation of h-AlN(002) when laser energy was 100 mJ. The film on Si(100) exhibited small diffraction peak of h-AlN(100) at 600 ℃, and presented weak preferred oritation of h-AlN(002) at 700 ℃. It was easy to grow the AlN film with high orientation degree on Si(111) substrate.
中图分类号 O484.1
所属栏目 试验研究
基金项目 有色金属及材料加工新技术教育部重点实验室开放基金资助项目(GXKFZ-05)
收稿日期 2011/7/8
修改稿日期 2012/3/12
网络出版日期
作者单位点击查看
备注李雪飞(1987-), 女, 湖南邵阳人, 硕士研究生。
引用该论文: LI Xue-fei,XIE Shang-sheng,HE Huan,FU Yue-chun. Laser Molecular Beam Epitaxial Growth Characteristics of AlN Thin Film Prepared on Si(111) and Si(100) Substrates[J]. Materials for mechancial engineering, 2012, 36(7): 38~40
李雪飞,谢尚昇,何欢,符跃春. Si(111)和Si(100)衬底上AlN薄膜的激光分子束外延生长特征[J]. 机械工程材料, 2012, 36(7): 38~40
被引情况:
【1】王志雄,王欣,李霞霞,黄飞武,张霞, "采用固相晶化和准分子激光晶化制备结晶硅薄膜的对比",机械工程材料 38, 46-49(2014)
【2】徐诚,沈理达,田宗军,刘志东,马云,朱军, "硅基底上喷射电沉积铜/钴多层膜的结合力",机械工程材料 39, 35-39(2015)
共有人对该论文发表了看法,其中:
人认为该论文很差
人认为该论文较差
人认为该论文一般
人认为该论文较好
人认为该论文很好
参考文献
【1】BAEK J, MA J, BECKER M F, et al. Correlations between optical properties, microstructure, and processing conditions of aluminum nitride thin films fabricated by pulsed laser deposition[J].Thin Solid Films, 2007, 515:7096-7104.
【2】MEN C L, LIN C L. A comparison of pulsed laser deposited and ion-beam-enhanced-deposited AlN thin films for SOI application[J].Materials Science and Engineering B, 2006, 133:124-128.
【3】OHTA J, FUJIOKA H, TAKAHASHI H, et al. Growth of epitaxial AlN films on (Mn, Zn)Fe2O4 substrates by pulsed laser deposition[J].Applied Surface Science, 2002, 197/198:486-489.
【4】GABRIEL F, HAJIME O, SADAFUMI Y. Growth mode of AlN epitaxial layers on 6H-SiC by plasma assisted molecular beam epitaxy[J].Journal of Crystal Growth, 2000, 209:415-418.
【5】INOUE S, OKAMOTO K, MATSUKI N, et al. Epitaxial growth of AlN on Cu(111) substrates using pulsed laser deposition[J].Journal of Crystal Growth, 2006, 289:574-577.
【6】OHTA J, FUJIOKA H, TAKAHASHI H, et al. Characterization of hetero-interfaces between group Ⅲ nitrides formed by PLD and various substrates[J].Applied Surface Science, 2002, 190:352-355.
【7】LV L, Li Q S, Li L, et al. Effects of substrate temperature and nitrogen pressure on growth of AlN films by pulsed laser deposition[J].Chinese Physics Letters, 2007, 24:552-554.
【8】BAKALOVA S, SZEKERES A, CZIRAKI A, et al. Influence of in situ nitrogen pressure on crystallization of pulsed laser deposited AlN films[J].Applied Surface Science, 2007, 253:8215-8219.
【9】GAURAV S, ALIKA K. Dependence of N2 pressure on the crystal structure and surface quality of AlN thin films deposited via pulsed laser deposition technique at room temperature[J].Applied Surface Science, 2008, 255:2057-2062.
【10】CIBERT C, CHATRAS M, CHAMPEAUX C, et al. Pulsed laser deposition of aluminum nitride thin films for FBAR applications[J].Applied Surface Science, 2007, 253:8151-8154.
【11】RISTOSCU C, DUCU C, SOCOL G, et al. Structural and optical characterization of AlN films grown by pulsed laser deposition[J].Applied Surface Science, 2005, 248:411-415.
【12】ZHANG J X, CHENG H, CHEN Y Z, et al. Growth of AlN films on Si(100) and Si(111) substrates by reactive magnetron sputtering[J].Surface and Coatings Technology, 2005, 198:68-73.
【2】MEN C L, LIN C L. A comparison of pulsed laser deposited and ion-beam-enhanced-deposited AlN thin films for SOI application[J].Materials Science and Engineering B, 2006, 133:124-128.
【3】OHTA J, FUJIOKA H, TAKAHASHI H, et al. Growth of epitaxial AlN films on (Mn, Zn)Fe2O4 substrates by pulsed laser deposition[J].Applied Surface Science, 2002, 197/198:486-489.
【4】GABRIEL F, HAJIME O, SADAFUMI Y. Growth mode of AlN epitaxial layers on 6H-SiC by plasma assisted molecular beam epitaxy[J].Journal of Crystal Growth, 2000, 209:415-418.
【5】INOUE S, OKAMOTO K, MATSUKI N, et al. Epitaxial growth of AlN on Cu(111) substrates using pulsed laser deposition[J].Journal of Crystal Growth, 2006, 289:574-577.
【6】OHTA J, FUJIOKA H, TAKAHASHI H, et al. Characterization of hetero-interfaces between group Ⅲ nitrides formed by PLD and various substrates[J].Applied Surface Science, 2002, 190:352-355.
【7】LV L, Li Q S, Li L, et al. Effects of substrate temperature and nitrogen pressure on growth of AlN films by pulsed laser deposition[J].Chinese Physics Letters, 2007, 24:552-554.
【8】BAKALOVA S, SZEKERES A, CZIRAKI A, et al. Influence of in situ nitrogen pressure on crystallization of pulsed laser deposited AlN films[J].Applied Surface Science, 2007, 253:8215-8219.
【9】GAURAV S, ALIKA K. Dependence of N2 pressure on the crystal structure and surface quality of AlN thin films deposited via pulsed laser deposition technique at room temperature[J].Applied Surface Science, 2008, 255:2057-2062.
【10】CIBERT C, CHATRAS M, CHAMPEAUX C, et al. Pulsed laser deposition of aluminum nitride thin films for FBAR applications[J].Applied Surface Science, 2007, 253:8151-8154.
【11】RISTOSCU C, DUCU C, SOCOL G, et al. Structural and optical characterization of AlN films grown by pulsed laser deposition[J].Applied Surface Science, 2005, 248:411-415.
【12】ZHANG J X, CHENG H, CHEN Y Z, et al. Growth of AlN films on Si(100) and Si(111) substrates by reactive magnetron sputtering[J].Surface and Coatings Technology, 2005, 198:68-73.
相关信息